CA1081835A - Method of producing a semiconductor photodiode of indium antimonide and device thereof - Google Patents

Method of producing a semiconductor photodiode of indium antimonide and device thereof

Info

Publication number
CA1081835A
CA1081835A CA275,727A CA275727A CA1081835A CA 1081835 A CA1081835 A CA 1081835A CA 275727 A CA275727 A CA 275727A CA 1081835 A CA1081835 A CA 1081835A
Authority
CA
Canada
Prior art keywords
substrate
epitaxial layer
indium antimonide
type
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA275,727A
Other languages
English (en)
French (fr)
Inventor
Dieter H. Pommerrenig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu TV Co Ltd
Hamamatsu Corp
Original Assignee
Hamamatsu TV Co Ltd
Hamamatsu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu TV Co Ltd, Hamamatsu Corp filed Critical Hamamatsu TV Co Ltd
Application granted granted Critical
Publication of CA1081835A publication Critical patent/CA1081835A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
CA275,727A 1976-11-08 1977-04-06 Method of producing a semiconductor photodiode of indium antimonide and device thereof Expired CA1081835A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73965976A 1976-11-08 1976-11-08
US739,659 1985-05-31

Publications (1)

Publication Number Publication Date
CA1081835A true CA1081835A (en) 1980-07-15

Family

ID=24973264

Family Applications (1)

Application Number Title Priority Date Filing Date
CA275,727A Expired CA1081835A (en) 1976-11-08 1977-04-06 Method of producing a semiconductor photodiode of indium antimonide and device thereof

Country Status (7)

Country Link
JP (1) JPS5358791A (en, 2012)
CA (1) CA1081835A (en, 2012)
DE (1) DE2720952A1 (en, 2012)
FR (1) FR2370366A1 (en, 2012)
GB (1) GB1516627A (en, 2012)
NL (1) NL7705212A (en, 2012)
SE (1) SE7705622L (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762772B1 (ko) 2003-09-09 2007-10-02 아사히 가세이 일렉트로닉스 가부시끼가이샤 적외선 센서 ｉｃ, 적외선 센서 및 그 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489613A (en, 2012) * 1965-08-19 1967-11-13

Also Published As

Publication number Publication date
GB1516627A (en) 1978-07-05
JPS5358791A (en) 1978-05-26
NL7705212A (nl) 1978-05-10
FR2370366B3 (en, 2012) 1980-06-20
DE2720952A1 (de) 1978-05-24
SE7705622L (sv) 1978-05-09
FR2370366A1 (fr) 1978-06-02

Similar Documents

Publication Publication Date Title
US4568397A (en) Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4650539A (en) Manufacture of cadmium mercury telluride
US4451691A (en) Three-terminal ternary III-V multicolor solar cells and process of fabrication
GB2146663A (en) Manufacture of cadmium mercury telluride
GB2147316A (en) A method of making p-doped silicon films and devices made therefrom
EP0671770B1 (en) Multilayer epitaxy for a silicon diode
US4734381A (en) Method of making a thin film cadmium telluride solar cell
US3208888A (en) Process of producing an electronic semiconductor device
EP0817279A1 (en) Process for the production of a chalcopyrite structure semiconductor thin film containing a specific dopant
US3129119A (en) Production of p.n. junctions in semiconductor material
JPH03173423A (ja) Ｐｎ接合素子の製造方法
US4237471A (en) Method of producing a semiconductor photodiode of indium antimonide and device thereof
JPS63160384A (ja) ＧａＡｓ太陽電池の製造方法
US3669769A (en) Method for minimizing autodoping in epitaxial deposition
Saul et al. Vapor‐Doped Multislice LPE for Efficient GaP Green LED's
CA1081835A (en) Method of producing a semiconductor photodiode of indium antimonide and device thereof
US4315477A (en) Semi-open liquid phase epitaxial growth system
US4164436A (en) Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source
US3493444A (en) Face-to-face epitaxial deposition which includes baffling the source and substrate materials and the interspace therebetween from the environment
US3617399A (en) Method of fabricating semiconductor power devices within high resistivity isolation rings
US4798743A (en) Vapor deposition method for the GaAs thin film
US5324685A (en) Method for fabricating a multilayer epitaxial structure
US5262349A (en) Method for producing a II-VI compound semiconductor device including mercury
US4263065A (en) Semi-open liquid phase epitaxial growth system
US4468685A (en) Infrared detector using grey tin

Legal Events

Date Code Title Description
MKEX Expiry