FR2370366B3 - - Google Patents

Info

Publication number
FR2370366B3
FR2370366B3 FR7716777A FR7716777A FR2370366B3 FR 2370366 B3 FR2370366 B3 FR 2370366B3 FR 7716777 A FR7716777 A FR 7716777A FR 7716777 A FR7716777 A FR 7716777A FR 2370366 B3 FR2370366 B3 FR 2370366B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7716777A
Other languages
French (fr)
Other versions
FR2370366A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2370366A1 publication Critical patent/FR2370366A1/fr
Application granted granted Critical
Publication of FR2370366B3 publication Critical patent/FR2370366B3/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/127The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials
FR7716777A 1976-11-08 1977-06-01 Procede de fabrication de photodiodes a l'antimoniure d'indium Granted FR2370366A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73965976A 1976-11-08 1976-11-08

Publications (2)

Publication Number Publication Date
FR2370366A1 FR2370366A1 (fr) 1978-06-02
FR2370366B3 true FR2370366B3 (en, 2012) 1980-06-20

Family

ID=24973264

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7716777A Granted FR2370366A1 (fr) 1976-11-08 1977-06-01 Procede de fabrication de photodiodes a l'antimoniure d'indium

Country Status (7)

Country Link
JP (1) JPS5358791A (en, 2012)
CA (1) CA1081835A (en, 2012)
DE (1) DE2720952A1 (en, 2012)
FR (1) FR2370366A1 (en, 2012)
GB (1) GB1516627A (en, 2012)
NL (1) NL7705212A (en, 2012)
SE (1) SE7705622L (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100762772B1 (ko) 2003-09-09 2007-10-02 아사히 가세이 일렉트로닉스 가부시끼가이샤 적외선 센서 ic, 적외선 센서 및 그 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489613A (en, 2012) * 1965-08-19 1967-11-13

Also Published As

Publication number Publication date
CA1081835A (en) 1980-07-15
GB1516627A (en) 1978-07-05
JPS5358791A (en) 1978-05-26
NL7705212A (nl) 1978-05-10
DE2720952A1 (de) 1978-05-24
SE7705622L (sv) 1978-05-09
FR2370366A1 (fr) 1978-06-02

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Legal Events

Date Code Title Description
ST Notification of lapse