FR2370366B3 - - Google Patents

Info

Publication number
FR2370366B3
FR2370366B3 FR7716777A FR7716777A FR2370366B3 FR 2370366 B3 FR2370366 B3 FR 2370366B3 FR 7716777 A FR7716777 A FR 7716777A FR 7716777 A FR7716777 A FR 7716777A FR 2370366 B3 FR2370366 B3 FR 2370366B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7716777A
Other versions
FR2370366A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of FR2370366A1 publication Critical patent/FR2370366A1/fr
Application granted granted Critical
Publication of FR2370366B3 publication Critical patent/FR2370366B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
FR7716777A 1976-11-08 1977-06-01 Procede de fabrication de photodiodes a l'antimoniure d'indium Granted FR2370366A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73965976A 1976-11-08 1976-11-08

Publications (2)

Publication Number Publication Date
FR2370366A1 FR2370366A1 (fr) 1978-06-02
FR2370366B3 true FR2370366B3 (fr) 1980-06-20

Family

ID=24973264

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7716777A Granted FR2370366A1 (fr) 1976-11-08 1977-06-01 Procede de fabrication de photodiodes a l'antimoniure d'indium

Country Status (7)

Country Link
JP (1) JPS5358791A (fr)
CA (1) CA1081835A (fr)
DE (1) DE2720952A1 (fr)
FR (1) FR2370366A1 (fr)
GB (1) GB1516627A (fr)
NL (1) NL7705212A (fr)
SE (1) SE7705622L (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1667239A4 (fr) 2003-09-09 2008-08-06 Asahi Kasei Emd Corp Circuit integre de capteur a infrarouge, capteur a infrarouge et procede permettant de produire ce capteur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489613A (fr) * 1965-08-19 1967-11-13

Also Published As

Publication number Publication date
FR2370366A1 (fr) 1978-06-02
DE2720952A1 (de) 1978-05-24
GB1516627A (en) 1978-07-05
CA1081835A (fr) 1980-07-15
SE7705622L (sv) 1978-05-09
JPS5358791A (en) 1978-05-26
NL7705212A (nl) 1978-05-10

Similar Documents

Publication Publication Date Title
CS186526B1 (fr)
DD126189A1 (fr)
CH605017A5 (fr)
BG22573A1 (fr)
BG23014A1 (fr)
BG23240A1 (fr)
BG23250A2 (fr)
BG23277A1 (fr)
BG23287A1 (fr)
BG23359A1 (fr)
BG26865A1 (fr)
CH575859A5 (fr)
CH590689A5 (fr)
CH594478A5 (fr)
CH594511A5 (fr)
CH598074A5 (fr)
CH598142A5 (fr)
CH598256A5 (fr)
CH599094A5 (fr)
CH599373A5 (fr)
DD126559A1 (fr)
CH600257A5 (fr)
CH600574A5 (fr)
CH600792A5 (fr)
CH600865A5 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse