FR2364578A1 - Analyseur d'image en couleur a semi-conducteur - Google Patents

Analyseur d'image en couleur a semi-conducteur

Info

Publication number
FR2364578A1
FR2364578A1 FR7727564A FR7727564A FR2364578A1 FR 2364578 A1 FR2364578 A1 FR 2364578A1 FR 7727564 A FR7727564 A FR 7727564A FR 7727564 A FR7727564 A FR 7727564A FR 2364578 A1 FR2364578 A1 FR 2364578A1
Authority
FR
France
Prior art keywords
light
image analyzer
color image
photodiode
charges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7727564A
Other languages
English (en)
Other versions
FR2364578B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2364578A1 publication Critical patent/FR2364578A1/fr
Application granted granted Critical
Publication of FR2364578B1 publication Critical patent/FR2364578B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14843—Interline transfer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Facsimile Scanning Arrangements (AREA)

Abstract

L'invention concerne un analyseur d'image en couleur à semi-conducteur. Il comporte un substrat semi-conducteur qui porte des éléments photo-électriques respectivement sensibles à la lumière rouge, à la lumière verte et à la lumière bleue. Chacun de ces éléments photoélectriques comporte un transistor à effet de champ destiné au transfert des charges et dont une partie constitue une photodiode, une pellicule isolante transparente sur la photodiode et une électrode transparente formant une capacite avec le substrat Des dispositions sont prises pour que la valeur de cette capacité soit adaptée aux charges développées par la lumière de la couleur correspondante, de manière à conserver le même pouvoir séparateur et le même rapport signal-bruit dans les différentes couleurs. L'invention s'applique à la réalisation d'une caméra de télévision en couleur.
FR7727564A 1976-09-13 1977-09-13 Analyseur d'image en couleur a semi-conducteur Granted FR2364578A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51108785A JPS5941351B2 (ja) 1976-09-13 1976-09-13 カラ−用固体撮像素子

Publications (2)

Publication Number Publication Date
FR2364578A1 true FR2364578A1 (fr) 1978-04-07
FR2364578B1 FR2364578B1 (fr) 1982-02-26

Family

ID=14493409

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7727564A Granted FR2364578A1 (fr) 1976-09-13 1977-09-13 Analyseur d'image en couleur a semi-conducteur

Country Status (6)

Country Link
US (1) US4242694A (fr)
JP (1) JPS5941351B2 (fr)
DE (1) DE2741226C3 (fr)
FR (1) FR2364578A1 (fr)
GB (1) GB1573185A (fr)
NL (1) NL7710002A (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419327A (en) * 1977-07-14 1979-02-14 Matsushita Electric Ind Co Ltd Solid state pick up unit
US4219834A (en) * 1977-11-11 1980-08-26 International Business Machines Corporation One-device monolithic random access memory and method of fabricating same
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
DE2939518A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
JPS56165362A (en) * 1980-05-26 1981-12-18 Hitachi Ltd Manufacture of solid state color image pickup element
JPS611964U (ja) * 1980-10-18 1986-01-08 アグフアーゲーヴエルト・アクチエンゲゼルシヤフト 電子画像変換装置
US4394675A (en) * 1981-03-16 1983-07-19 Eastman Kodak Company Transparent asymmetric electrode structure for charge coupled device image sensor
US4481522A (en) * 1982-03-24 1984-11-06 Rca Corporation CCD Imagers with substrates having drift field
NL8201630A (nl) * 1982-04-20 1983-11-16 Philips Nv Inrichting ten behoeve van signaalverwerking en trefplaat voor een dergelijke inrichting.
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
JPH0666446B2 (ja) * 1984-03-29 1994-08-24 オリンパス光学工業株式会社 固体撮像素子
JPS6152061A (ja) * 1984-08-22 1986-03-14 Toshiba Corp 密着型カラ−イメ−ジセンサ
US4807004A (en) * 1986-11-26 1989-02-21 Texas Instruments Incorporated Tin oxide CCD imager
US4901129A (en) * 1987-04-10 1990-02-13 Texas Instruments Incorporated Bulk charge modulated transistor threshold image sensor elements and method of making
JP2768453B2 (ja) * 1992-03-03 1998-06-25 キヤノン株式会社 固体撮像装置及びそれを用いた装置
US5210049A (en) * 1992-04-28 1993-05-11 Eastman Kodak Company Method of making a solid state image sensor
JPH0785502B2 (ja) * 1993-01-22 1995-09-13 日本電気株式会社 カラーリニアイメージセンサ
US5574659A (en) * 1994-10-12 1996-11-12 Chromax, Inc. Dye transfer prints utilizing digital technology
JP3019797B2 (ja) * 1997-02-07 2000-03-13 日本電気株式会社 固体撮像素子とその製造方法
FR2781929B1 (fr) * 1998-07-28 2002-08-30 St Microelectronics Sa Capteur d'image a reseau de photodiodes
US6252220B1 (en) 1999-04-26 2001-06-26 Xerox Corporation Sensor cover glass with infrared filter
US6414342B1 (en) * 1999-06-18 2002-07-02 Micron Technology Inc. Photogate with improved short wavelength response for a CMOS imager
US6316284B1 (en) 2000-09-07 2001-11-13 Xerox Corporation Infrared correction in color scanners
US6768565B1 (en) 2000-09-07 2004-07-27 Xerox Corporation Infrared correction in color scanners
FR2820882B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodetecteur a trois transistors
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
FR2824665B1 (fr) * 2001-05-09 2004-07-23 St Microelectronics Sa Photodetecteur de type cmos
KR20040036087A (ko) * 2002-10-23 2004-04-30 주식회사 하이닉스반도체 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법
US6878918B2 (en) * 2003-01-09 2005-04-12 Dialdg Semiconductor Gmbh APS pixel with reset noise suppression and programmable binning capability
KR100538150B1 (ko) * 2003-12-31 2005-12-21 동부아남반도체 주식회사 이미지 센서 및 그 제조방법
WO2006028128A1 (fr) * 2004-09-09 2006-03-16 Matsushita Electric Industrial Co., Ltd. Élément de détection d’image à semi-conducteur
JP4764243B2 (ja) * 2006-04-20 2011-08-31 株式会社東芝 固体撮像装置
JP2008153594A (ja) * 2006-12-20 2008-07-03 Seiko Instruments Inc イメージセンサｉｃ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1437328A (en) * 1972-09-25 1976-05-26 Rca Corp Sensors having recycling means
US4064532A (en) * 1974-09-18 1977-12-20 Sony Corporation Solid state color camera
US4001878A (en) * 1975-11-19 1977-01-04 Rca Corporation Charge transfer color imagers
JPS5323224A (en) * 1976-08-16 1978-03-03 Hitachi Ltd Solid pickup unit

Also Published As

Publication number Publication date
US4242694A (en) 1980-12-30
FR2364578B1 (fr) 1982-02-26
NL7710002A (nl) 1978-03-15
DE2741226B2 (de) 1979-11-08
JPS5335322A (en) 1978-04-01
DE2741226A1 (de) 1978-03-16
GB1573185A (en) 1980-08-20
DE2741226C3 (de) 1980-07-17
JPS5941351B2 (ja) 1984-10-06

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Legal Events

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