FR2363888A1 - Procede pour la realisation d'un dispositif semi-conducteur et dispositif semi-conducteur ainsi realise - Google Patents

Procede pour la realisation d'un dispositif semi-conducteur et dispositif semi-conducteur ainsi realise

Info

Publication number
FR2363888A1
FR2363888A1 FR7726547A FR7726547A FR2363888A1 FR 2363888 A1 FR2363888 A1 FR 2363888A1 FR 7726547 A FR7726547 A FR 7726547A FR 7726547 A FR7726547 A FR 7726547A FR 2363888 A1 FR2363888 A1 FR 2363888A1
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
realization
realized
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7726547A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2363888A1 publication Critical patent/FR2363888A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y10T29/4979—Breaking through weakened portion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Procédé pour la réalisation de dispositifs semi-conducteurs comportant chacun un corps semi-conducteur présentant la structure requise, selon lequel une surface principale d'un disque en matériau semi-conducteur est soumise à des traitements de façon à obtenir une pluralité de telles structures, après quoi le disque est divisé, par coupage à l'aide d'un rayon laser, en corps semi-conducteurs présentant chacun la structure requise. Le matériau formé pendant le coupage du disque est enlevé par décapage sélectif par rapport au matériau semi-conducteur.
FR7726547A 1976-09-03 1977-09-01 Procede pour la realisation d'un dispositif semi-conducteur et dispositif semi-conducteur ainsi realise Withdrawn FR2363888A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7609815A NL7609815A (nl) 1976-09-03 1976-09-03 Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.

Publications (1)

Publication Number Publication Date
FR2363888A1 true FR2363888A1 (fr) 1978-03-31

Family

ID=19826843

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7726547A Withdrawn FR2363888A1 (fr) 1976-09-03 1977-09-01 Procede pour la realisation d'un dispositif semi-conducteur et dispositif semi-conducteur ainsi realise

Country Status (7)

Country Link
US (1) US4224101A (fr)
JP (1) JPS5331961A (fr)
CA (1) CA1099618A (fr)
DE (1) DE2737686A1 (fr)
FR (1) FR2363888A1 (fr)
GB (1) GB1586223A (fr)
NL (1) NL7609815A (fr)

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DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
US5000817A (en) * 1984-10-24 1991-03-19 Aine Harry E Batch method of making miniature structures assembled in wafer form
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US4940508A (en) * 1989-06-26 1990-07-10 Digital Equipment Corporation Apparatus and method for forming die sites in a high density electrical interconnecting structure
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US5214261A (en) * 1990-09-10 1993-05-25 Rockwell International Corporation Method and apparatus for dicing semiconductor substrates using an excimer laser beam
JPH04128010A (ja) * 1990-09-19 1992-04-28 Kyoto Handotai Kk シリコン単結晶の切断方法
JPH0629384A (ja) * 1991-05-10 1994-02-04 Intel Corp 集積回路の成形化合物の動きを防止する方法
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WO1997029509A1 (fr) * 1996-02-09 1997-08-14 Philips Electronics N.V. Separation laser d'elements semiconducteurs formes sur une plaquette d'un materiau semiconducteur
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JP3169842B2 (ja) * 1996-10-07 2001-05-28 セイコーインスツルメンツ株式会社 サーマルヘッドおよびその製造方法
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6063695A (en) * 1998-11-16 2000-05-16 Taiwan Semiconductor Manufacturing Company Simplified process for the fabrication of deep clear laser marks using a photoresist mask
JP3631956B2 (ja) 2000-05-12 2005-03-23 富士通株式会社 半導体チップの実装方法
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
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FR2220877A1 (en) * 1973-03-09 1974-10-04 Thomson Csf PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
FR2230021A1 (fr) * 1973-05-17 1974-12-13 Western Electric Co
DE2540430A1 (de) * 1974-11-25 1976-05-26 Ibm Verfahren zum zerteilen von halbleiterplaettchen

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GB1246022A (en) * 1968-09-14 1971-09-15 Hitachi Ltd Method of manufacturing semiconductor devices
FR2220877A1 (en) * 1973-03-09 1974-10-04 Thomson Csf PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
FR2230021A1 (fr) * 1973-05-17 1974-12-13 Western Electric Co
DE2540430A1 (de) * 1974-11-25 1976-05-26 Ibm Verfahren zum zerteilen von halbleiterplaettchen

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Also Published As

Publication number Publication date
DE2737686A1 (de) 1978-03-09
GB1586223A (en) 1981-03-18
CA1099618A (fr) 1981-04-21
NL7609815A (nl) 1978-03-07
US4224101A (en) 1980-09-23
JPS5331961A (en) 1978-03-25

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