FR2640438B1 - Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede - Google Patents

Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede

Info

Publication number
FR2640438B1
FR2640438B1 FR8816215A FR8816215A FR2640438B1 FR 2640438 B1 FR2640438 B1 FR 2640438B1 FR 8816215 A FR8816215 A FR 8816215A FR 8816215 A FR8816215 A FR 8816215A FR 2640438 B1 FR2640438 B1 FR 2640438B1
Authority
FR
France
Prior art keywords
lasers
producing semiconductor
semiconductor lasers
producing
lasers obtained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8816215A
Other languages
English (en)
Other versions
FR2640438A1 (fr
Inventor
Claude Weisbuch
Baudoin De Cremoux
Jean Paul Pocholle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8816215A priority Critical patent/FR2640438B1/fr
Priority to JP2501067A priority patent/JPH03502513A/ja
Priority to EP90900897A priority patent/EP0399033A1/fr
Priority to PCT/FR1989/000629 priority patent/WO1990006608A1/fr
Priority to US07/543,787 priority patent/US5055422A/en
Publication of FR2640438A1 publication Critical patent/FR2640438A1/fr
Application granted granted Critical
Publication of FR2640438B1 publication Critical patent/FR2640438B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
FR8816215A 1988-12-09 1988-12-09 Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede Expired - Lifetime FR2640438B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8816215A FR2640438B1 (fr) 1988-12-09 1988-12-09 Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede
JP2501067A JPH03502513A (ja) 1988-12-09 1989-12-05 半導体レーザの製造方法、ならびに該方法により得られたレーザ
EP90900897A EP0399033A1 (fr) 1988-12-09 1989-12-05 Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede
PCT/FR1989/000629 WO1990006608A1 (fr) 1988-12-09 1989-12-05 Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede
US07/543,787 US5055422A (en) 1988-12-09 1989-12-05 Process for the construction of semiconductor lasers and lasers obtained by the process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8816215A FR2640438B1 (fr) 1988-12-09 1988-12-09 Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede

Publications (2)

Publication Number Publication Date
FR2640438A1 FR2640438A1 (fr) 1990-06-15
FR2640438B1 true FR2640438B1 (fr) 1991-01-25

Family

ID=9372768

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8816215A Expired - Lifetime FR2640438B1 (fr) 1988-12-09 1988-12-09 Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede

Country Status (5)

Country Link
US (1) US5055422A (fr)
EP (1) EP0399033A1 (fr)
JP (1) JPH03502513A (fr)
FR (1) FR2640438B1 (fr)
WO (1) WO1990006608A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327448A (en) * 1992-03-30 1994-07-05 The Board Of Trustees Of The University Of Illinois Semiconductor devices and techniques for controlled optical confinement
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
FR2811148B1 (fr) 2000-06-30 2006-07-21 Thomson Csf Laser pompe et milieu laser optimise
FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
JP3928695B2 (ja) * 2001-03-30 2007-06-13 セイコーエプソン株式会社 面発光型の半導体発光装置およびその製造方法
FR2825463B1 (fr) * 2001-05-30 2003-09-12 Thales Sa Gyrometre laser etat solide comportant un bloc resonateur

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526851A (en) * 1967-07-10 1970-09-01 Rca Corp Filamentary structure injection laser having a very narrow active junction
US3605037A (en) * 1969-05-02 1971-09-14 Bell Telephone Labor Inc Curved junction laser devices
GB1482936A (en) * 1974-10-29 1977-08-17 Standard Telephones Cables Ltd Semiconductor lasers
JPS57192088A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Manufacture of light emitting diode
US4536469A (en) * 1981-11-23 1985-08-20 Raytheon Company Semiconductor structures and manufacturing methods
US4706101A (en) * 1984-10-27 1987-11-10 Kabushiki Kaisha Toshiba Light emitting diode formed of a compound semiconductor material
US4660207A (en) * 1984-11-21 1987-04-21 Northern Telecom Limited Surface-emitting light emitting device
JPH0716073B2 (ja) * 1985-01-22 1995-02-22 東京工業大学長 面発光レ−ザ発振装置
JPS61174686A (ja) * 1985-01-29 1986-08-06 Furukawa Electric Co Ltd:The 面発光型半導体レ−ザ
US4675876A (en) * 1985-02-14 1987-06-23 Northern Telecom Limited Bragg distributed feedback surface emitting laser
JPS61276389A (ja) * 1985-05-31 1986-12-06 Fujitsu Ltd 半導体光素子
GB2203894B (en) * 1987-03-03 1990-11-21 Fumio Inaba Surface emission type semiconductor light-emitting device
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
JPH0278280A (ja) * 1988-09-14 1990-03-19 Ricoh Co Ltd 半導体発光装置
JPH02128481A (ja) * 1988-11-07 1990-05-16 Nec Corp 発光デバイスの製造方法

Also Published As

Publication number Publication date
EP0399033A1 (fr) 1990-11-28
FR2640438A1 (fr) 1990-06-15
WO1990006608A1 (fr) 1990-06-14
US5055422A (en) 1991-10-08
JPH03502513A (ja) 1991-06-06

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Legal Events

Date Code Title Description
ST Notification of lapse