FR2363644A1 - Procede de galvanoplastie et dispositif pour la mise en oeuvre du procede - Google Patents
Procede de galvanoplastie et dispositif pour la mise en oeuvre du procedeInfo
- Publication number
- FR2363644A1 FR2363644A1 FR7726610A FR7726610A FR2363644A1 FR 2363644 A1 FR2363644 A1 FR 2363644A1 FR 7726610 A FR7726610 A FR 7726610A FR 7726610 A FR7726610 A FR 7726610A FR 2363644 A1 FR2363644 A1 FR 2363644A1
- Authority
- FR
- France
- Prior art keywords
- pulses
- galvanoplasty
- implementing
- microseconds
- interval
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S204/00—Chemistry: electrical and wave energy
- Y10S204/09—Wave forms
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Electrolytic Production Of Metals (AREA)
Abstract
L'invention concerne un procédé de galvanoplastie et un dispositif pour la mise en oeuvre du procédé. On fait passer un courant sous forme d'impulsions entre une pièce à recouvrir 14 et une électrode 13 en présence d'un électrolyte 15, les impulsions ayant une durée inférieure ou égale à 100 microsecondes, de preférence inférieure à 50 microsecondes, l'intervalle entre deux impulsions étant supérieur à deux fois la durée d'impulsions. Les impulsions peuvent être modifiées en fonction de la condition de l'intervalle de dépôt électrolytique
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10472476A JPS5329346A (en) | 1976-09-01 | 1976-09-01 | Process of electrodeposition |
JP15005176A JPS5373437A (en) | 1976-12-14 | 1976-12-14 | Power source device for electrolysis |
JP6912977A JPS544253A (en) | 1977-06-10 | 1977-06-10 | Electrolytic apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2363644A1 true FR2363644A1 (fr) | 1978-03-31 |
FR2363644B1 FR2363644B1 (fr) | 1982-05-28 |
Family
ID=27299961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7726610A Granted FR2363644A1 (fr) | 1976-09-01 | 1977-09-01 | Procede de galvanoplastie et dispositif pour la mise en oeuvre du procede |
Country Status (5)
Country | Link |
---|---|
US (1) | US4496436A (fr) |
CH (1) | CH629542A5 (fr) |
DE (1) | DE2739427C2 (fr) |
FR (1) | FR2363644A1 (fr) |
GB (1) | GB1529187A (fr) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1539309A (en) * | 1976-12-14 | 1979-01-31 | Inoue Japax Res | Electrochemical polishing |
US4396467A (en) * | 1980-10-27 | 1983-08-02 | General Electric Company | Periodic reverse current pulsing to form uniformly sized feed through conductors |
NL8105150A (nl) | 1981-11-13 | 1983-06-01 | Veco Beheer Bv | Werkwijze voor het vervaardigen van zeefmateriaal, verkregen zeefmateriaal, alsmede inrichting voor het uitvoeren van de werkwijze. |
US4468293A (en) * | 1982-03-05 | 1984-08-28 | Olin Corporation | Electrochemical treatment of copper for improving its bond strength |
US4515671A (en) * | 1983-01-24 | 1985-05-07 | Olin Corporation | Electrochemical treatment of copper for improving its bond strength |
US4566953A (en) * | 1984-12-24 | 1986-01-28 | At&T Technologies, Inc. | Pulse plating of nickel-antimony films |
IT1215985B (it) * | 1988-03-04 | 1990-02-22 | Elca Srl | Procedimento elettrochimico per la realizzazione di rivestimenti di cromo e metalli simili mediante corrente pulsante ad inversione periodica della polarita' |
US5270229A (en) * | 1989-03-07 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Thin film semiconductor device and process for producing thereof |
FI85793C (fi) * | 1990-05-18 | 1992-05-25 | Plasmapiiri Oy | Foerfarande och anordning foer framstaellning av kretskort. |
JP2875680B2 (ja) * | 1992-03-17 | 1999-03-31 | 株式会社東芝 | 基材表面の微小孔又は微細凹みの充填又は被覆方法 |
DE4225961C5 (de) * | 1992-08-06 | 2011-01-27 | Atotech Deutschland Gmbh | Vorrichtung zur Galvanisierung, insbesondere Verkupferung, flacher platten- oder bogenförmiger Gegenstände |
DE19545231A1 (de) * | 1995-11-21 | 1997-05-22 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Metallschichten |
DE19547948C1 (de) * | 1995-12-21 | 1996-11-21 | Atotech Deutschland Gmbh | Verfahren und Schaltungsanordnung zur Erzeugung von Strompulsen zur elektrolytischen Metallabscheidung |
US6402931B1 (en) | 1998-05-18 | 2002-06-11 | Faraday Technology Marketing Group, Llc | Electrochemical machining using modulated reverse electric fields |
US6582578B1 (en) | 1999-04-08 | 2003-06-24 | Applied Materials, Inc. | Method and associated apparatus for tilting a substrate upon entry for metal deposition |
DE19925373B4 (de) * | 1999-06-02 | 2006-04-06 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Galvanisieren |
US6299741B1 (en) | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
US6913680B1 (en) | 2000-05-02 | 2005-07-05 | Applied Materials, Inc. | Method of application of electrical biasing to enhance metal deposition |
US6808612B2 (en) | 2000-05-23 | 2004-10-26 | Applied Materials, Inc. | Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio |
JP3423702B2 (ja) * | 2000-08-29 | 2003-07-07 | 創輝株式会社 | 金属めっき方法 |
US6740221B2 (en) | 2001-03-15 | 2004-05-25 | Applied Materials Inc. | Method of forming copper interconnects |
DE10202431C1 (de) * | 2002-01-22 | 2003-05-28 | Egon Huebel | Vorrichtung und Verfahren zum elektrochemischen Behandeln von Gut mit Pulsstrom |
US7239747B2 (en) * | 2002-01-24 | 2007-07-03 | Chatterbox Systems, Inc. | Method and system for locating position in printed texts and delivering multimedia information |
US20030188974A1 (en) * | 2002-04-03 | 2003-10-09 | Applied Materials, Inc. | Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects |
US6911136B2 (en) * | 2002-04-29 | 2005-06-28 | Applied Materials, Inc. | Method for regulating the electrical power applied to a substrate during an immersion process |
US20030201185A1 (en) * | 2002-04-29 | 2003-10-30 | Applied Materials, Inc. | In-situ pre-clean for electroplating process |
US7189313B2 (en) * | 2002-05-09 | 2007-03-13 | Applied Materials, Inc. | Substrate support with fluid retention band |
US20030209523A1 (en) * | 2002-05-09 | 2003-11-13 | Applied Materials, Inc. | Planarization by chemical polishing for ULSI applications |
US20040072445A1 (en) * | 2002-07-11 | 2004-04-15 | Applied Materials, Inc. | Effective method to improve surface finish in electrochemically assisted CMP |
US20040118699A1 (en) * | 2002-10-02 | 2004-06-24 | Applied Materials, Inc. | Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects |
DE10311575B4 (de) * | 2003-03-10 | 2007-03-22 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis |
US20040206628A1 (en) * | 2003-04-18 | 2004-10-21 | Applied Materials, Inc. | Electrical bias during wafer exit from electrolyte bath |
DE102004045451B4 (de) | 2004-09-20 | 2007-05-03 | Atotech Deutschland Gmbh | Galvanisches Verfahren zum Füllen von Durchgangslöchern mit Metallen, insbesondere von Leiterplatten mit Kupfer |
US20060175201A1 (en) * | 2005-02-07 | 2006-08-10 | Hooman Hafezi | Immersion process for electroplating applications |
CN101416569B (zh) | 2006-03-30 | 2011-04-06 | 埃托特克德国有限公司 | 用金属填充孔和凹处的电解方法 |
ATE506468T1 (de) | 2008-04-28 | 2011-05-15 | Atotech Deutschland Gmbh | Wässriges saures bad und verfahren zum elektrolytischen abschneiden von kupfer |
US20110017608A1 (en) * | 2009-07-27 | 2011-01-27 | Faraday Technology, Inc. | Electrochemical etching and polishing of conductive substrates |
EP2518187A1 (fr) | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Bain d'acide aqueux pour le dépôt électrolytique de cuivre |
US10081880B2 (en) | 2013-05-06 | 2018-09-25 | Fpinnovations | Cellulose nanocrystal (CNC) films and conductive CNC-based polymer films produced using electrochemical techniques |
CN109790638B (zh) | 2016-08-15 | 2021-06-18 | 德国艾托特克公司 | 用于电解镀铜的酸性水性组合物 |
EP3470552B1 (fr) | 2017-10-13 | 2020-12-30 | ATOTECH Deutschland GmbH | Composition aqueuse acide pour déposer électrolytiquement un dépôt de cuivre |
EP3901331A1 (fr) | 2020-04-23 | 2021-10-27 | ATOTECH Deutschland GmbH | Composition aqueuse acide pour déposer électrolytiquement un dépôt de cuivre |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1421984A1 (de) * | 1962-10-01 | 1968-11-07 | Forsch Edelmetalle Und Metallc | Verfahren zur Herstellung von rissfreien Chromueberzuegen |
DE2061225A1 (de) * | 1969-12-30 | 1971-09-09 | Ibm | Verfahren zum elektrolytischen Abscheiden von legierten Duennschichten |
FR2134401A1 (fr) * | 1971-04-24 | 1972-12-08 | Schering Ag | |
US3959088A (en) * | 1975-03-19 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for generating high amperage pulses from an A-C power source |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2726202A (en) * | 1955-06-06 | 1955-12-06 | Robotron Corp | Method for plating by condenser discharge |
JPS5745318B2 (fr) * | 1974-09-18 | 1982-09-27 |
-
1977
- 1977-08-31 CH CH1062977A patent/CH629542A5/de not_active IP Right Cessation
- 1977-09-01 GB GB36632/77A patent/GB1529187A/en not_active Expired
- 1977-09-01 DE DE2739427A patent/DE2739427C2/de not_active Expired
- 1977-09-01 FR FR7726610A patent/FR2363644A1/fr active Granted
-
1978
- 1978-12-27 US US06/973,608 patent/US4496436A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1421984A1 (de) * | 1962-10-01 | 1968-11-07 | Forsch Edelmetalle Und Metallc | Verfahren zur Herstellung von rissfreien Chromueberzuegen |
DE2061225A1 (de) * | 1969-12-30 | 1971-09-09 | Ibm | Verfahren zum elektrolytischen Abscheiden von legierten Duennschichten |
FR2134401A1 (fr) * | 1971-04-24 | 1972-12-08 | Schering Ag | |
US3959088A (en) * | 1975-03-19 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for generating high amperage pulses from an A-C power source |
Non-Patent Citations (2)
Title |
---|
PLATING, volume 58, No. 8, août 1969, pages 909 - 913, American Electroplaters Society, Inc. East Orange (us), V.A. LAMB: 'Electroplating with Current Pulses in the microsecond Range' * |
PLATING, volume 62, No. 2, février 1975, pages 139 - 141, American Electroplaters Society, Inc. East Orange (US), W. SULLIVAN: 'Electroplating Cobalt With a High Current Capacity Pulse Plating System' * |
Also Published As
Publication number | Publication date |
---|---|
GB1529187A (en) | 1978-10-18 |
FR2363644B1 (fr) | 1982-05-28 |
DE2739427C2 (de) | 1983-12-08 |
DE2739427A1 (de) | 1978-03-02 |
CH629542A5 (de) | 1982-04-30 |
US4496436A (en) | 1985-01-29 |
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