FR2363199A1 - Procede de fabrication d'une matiere semi-conductrice de grande surface, fixee a un substrat - Google Patents
Procede de fabrication d'une matiere semi-conductrice de grande surface, fixee a un substratInfo
- Publication number
- FR2363199A1 FR2363199A1 FR7725810A FR7725810A FR2363199A1 FR 2363199 A1 FR2363199 A1 FR 2363199A1 FR 7725810 A FR7725810 A FR 7725810A FR 7725810 A FR7725810 A FR 7725810A FR 2363199 A1 FR2363199 A1 FR 2363199A1
- Authority
- FR
- France
- Prior art keywords
- substrate
- semiconductor material
- manufacturing
- fixed
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000003376 silicon Chemical class 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/134—Remelt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Procédé de fabrication d'une matière semi-conductrice de grande surface, fixée à un substrat. Ce procédé est essentiellement caractérisé en ce qu'on dépose sous une épaisseur de 10 à 200 mu m environ sur un article planiforme servant de substrat, chauffable par passage direct d'un courant électrique et porté à la température de dépôt, du silicium provenant d'un composé gazeux qui contient en plus un dopant, puis on fait fondre cette couche de silicium sur 80 à 100 % de son épaisseur à partir de sa surface libre et on provoque ensuite une nouvelle solidification par création d'un gradient de température approprié à partir du substrat. Cette matière semi-conductrice est destinée à la fabrication de cellules solaires.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2638269A DE2638269C2 (de) | 1976-08-25 | 1976-08-25 | Verfahren zur Herstellung von substratgebundenem, großflächigem Silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2363199A1 true FR2363199A1 (fr) | 1978-03-24 |
FR2363199B1 FR2363199B1 (fr) | 1980-02-01 |
Family
ID=5986349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7725810A Granted FR2363199A1 (fr) | 1976-08-25 | 1977-08-24 | Procede de fabrication d'une matiere semi-conductrice de grande surface, fixee a un substrat |
Country Status (6)
Country | Link |
---|---|
US (1) | US4113532A (fr) |
JP (1) | JPS5344192A (fr) |
CA (1) | CA1074428A (fr) |
DE (1) | DE2638269C2 (fr) |
FR (1) | FR2363199A1 (fr) |
GB (1) | GB1548795A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006067051A1 (fr) * | 2004-12-21 | 2006-06-29 | Solarforce | Procede de fabrication de cellules photovoltaiques |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4187126A (en) * | 1978-07-28 | 1980-02-05 | Conoco, Inc. | Growth-orientation of crystals by raster scanning electron beam |
US4525223A (en) * | 1978-09-19 | 1985-06-25 | Noboru Tsuya | Method of manufacturing a thin ribbon wafer of semiconductor material |
US4313254A (en) * | 1979-10-30 | 1982-02-02 | The Johns Hopkins University | Thin-film silicon solar cell with metal boride bottom electrode |
DE3017842A1 (de) * | 1980-05-09 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktor gleichwertigen saeulenstruktur durch sintern |
DE3017923A1 (de) * | 1980-05-09 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern |
DE3017831A1 (de) * | 1980-05-09 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern |
US4400409A (en) | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
JPS5757482A (en) * | 1980-08-12 | 1982-04-06 | Nippon Electric Co | Heater |
US4443653A (en) * | 1980-10-24 | 1984-04-17 | The University Of Delaware | Thin film photovoltaic device with multilayer substrate |
US4369730A (en) * | 1981-03-16 | 1983-01-25 | Energy Conversion Devices, Inc. | Cathode for generating a plasma |
IE53197B1 (en) * | 1981-03-16 | 1988-08-31 | Energy Conversion Devices Inc | Isolation valve |
US4383130A (en) * | 1981-05-04 | 1983-05-10 | Alpha Solarco Inc. | Solar energy cell and method of manufacture |
US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
JPS5858726A (ja) * | 1981-10-05 | 1983-04-07 | Hitachi Ltd | 半導体処理装置 |
DE3210403A1 (de) * | 1982-03-22 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von grossflaechigen siliziumkoerpern in modulbauweise |
DE3210492A1 (de) * | 1982-03-22 | 1983-09-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von grossflaechigen siliziumkoerpern in modulbauweise |
DE3231268A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
DE3231326A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen |
DE3305933A1 (de) * | 1983-02-21 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum herstellen von polykristallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen |
FR2547319B1 (fr) * | 1983-06-09 | 1987-10-09 | Gleizes Raymond | Procede et appareil de fabrication de couches monocristallines et macrocristallines, notamment pour cellules photovoltaiques |
JPS61136220A (ja) * | 1984-12-07 | 1986-06-24 | Fuji Electric Co Ltd | 微結晶シリコン膜の形成方法 |
DE3612269A1 (de) * | 1986-04-11 | 1987-10-15 | Telefunken Electronic Gmbh | Verfahren zum anbringen eines verbindungsleiters am anschlusskontakt einer photovoltaischen solarzelle |
DE3813737A1 (de) * | 1988-04-23 | 1989-11-02 | Fraunhofer Ges Forschung | Verfahren zum herstellen von solarzellen sowie spiegelofen zur durchfuehrung des verfahrens |
US5273911A (en) * | 1991-03-07 | 1993-12-28 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a thin-film solar cell |
JP3242452B2 (ja) * | 1992-06-19 | 2001-12-25 | 三菱電機株式会社 | 薄膜太陽電池の製造方法 |
JP2639616B2 (ja) * | 1993-03-12 | 1997-08-13 | 株式会社半導体エネルギー研究所 | 半導体被膜形成方法 |
US5382808A (en) * | 1993-05-14 | 1995-01-17 | Kobe Steel, Usa Inc. | Metal boride ohmic contact on diamond and method for making same |
JP5386747B2 (ja) * | 2008-02-21 | 2014-01-15 | 公益財団法人神奈川科学技術アカデミー | 半導体基板、半導体素子、発光素子及び電子素子 |
FR2935838B1 (fr) * | 2008-09-05 | 2012-11-23 | Commissariat Energie Atomique | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
CN102576653B (zh) * | 2009-08-20 | 2015-04-29 | 财团法人生产技术研究奖励会 | 半导体基板、半导体层的制造方法、半导体基板的制造方法、半导体元件、发光元件、显示面板、电子元件、太阳能电池元件及电子设备 |
WO2011047455A1 (fr) * | 2009-10-23 | 2011-04-28 | Arise Technologies Corporation | Croissance maîtrisée à basse température de films épitaxiaux de silicium pour applications photovoltaïques |
US9196471B1 (en) | 2012-06-01 | 2015-11-24 | Yen Fui Choo | Scanner for wafers, method for using the scanner, and components of the scanner |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1141561A (fr) * | 1956-01-20 | 1957-09-04 | Cedel | Procédé et moyens pour la fabrication de matériaux semi-conducteurs |
US3078328A (en) * | 1959-11-12 | 1963-02-19 | Texas Instruments Inc | Solar cell |
US3141849A (en) * | 1960-07-04 | 1964-07-21 | Wacker Chemie Gmbh | Process for doping materials |
NL270665A (fr) * | 1960-10-31 | 1900-01-01 | ||
US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
US3441454A (en) * | 1965-10-29 | 1969-04-29 | Westinghouse Electric Corp | Method of fabricating a semiconductor by diffusion |
US3558376A (en) * | 1966-01-07 | 1971-01-26 | Siemens Ag | Method for controlled doping by gas of foreign substance into semiconductor materials |
US3914856A (en) * | 1972-06-05 | 1975-10-28 | Fang Pao Hsien | Economical solar cell for producing electricity |
US3900943A (en) * | 1973-06-07 | 1975-08-26 | Dow Corning | Silicon semiconductor device array and method of making same |
JPS51890A (en) * | 1974-06-20 | 1976-01-07 | Shunpei Yamazaki | Handotaisochi oyobi sonosakuseihoho |
US3961997A (en) * | 1975-05-12 | 1976-06-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fabrication of polycrystalline solar cells on low-cost substrates |
-
1976
- 1976-08-25 DE DE2638269A patent/DE2638269C2/de not_active Expired
- 1976-11-01 US US05/737,249 patent/US4113532A/en not_active Expired - Lifetime
- 1976-11-10 CA CA265,373A patent/CA1074428A/fr not_active Expired
-
1977
- 1977-08-17 GB GB34512/77A patent/GB1548795A/en not_active Expired
- 1977-08-24 FR FR7725810A patent/FR2363199A1/fr active Granted
- 1977-08-25 JP JP10215377A patent/JPS5344192A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006067051A1 (fr) * | 2004-12-21 | 2006-06-29 | Solarforce | Procede de fabrication de cellules photovoltaiques |
Also Published As
Publication number | Publication date |
---|---|
GB1548795A (en) | 1979-07-18 |
DE2638269A1 (de) | 1978-03-02 |
CA1074428A (fr) | 1980-03-25 |
JPS5344192A (en) | 1978-04-20 |
FR2363199B1 (fr) | 1980-02-01 |
US4113532A (en) | 1978-09-12 |
DE2638269C2 (de) | 1983-05-26 |
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