JPS6248390B2 - - Google Patents
Info
- Publication number
- JPS6248390B2 JPS6248390B2 JP53016748A JP1674878A JPS6248390B2 JP S6248390 B2 JPS6248390 B2 JP S6248390B2 JP 53016748 A JP53016748 A JP 53016748A JP 1674878 A JP1674878 A JP 1674878A JP S6248390 B2 JPS6248390 B2 JP S6248390B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous
- amorphous silicon
- resistivity
- conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 description 40
- 239000000758 substrate Substances 0.000 description 25
- 239000012535 impurity Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002178 crystalline material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1674878A JPS54109762A (en) | 1978-02-16 | 1978-02-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1674878A JPS54109762A (en) | 1978-02-16 | 1978-02-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54109762A JPS54109762A (en) | 1979-08-28 |
| JPS6248390B2 true JPS6248390B2 (fr) | 1987-10-13 |
Family
ID=11924880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1674878A Granted JPS54109762A (en) | 1978-02-16 | 1978-02-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54109762A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5752176A (en) * | 1980-09-16 | 1982-03-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JPS57100770A (en) * | 1980-12-16 | 1982-06-23 | Seiko Epson Corp | Switching element |
| JPS57102076A (en) * | 1980-12-17 | 1982-06-24 | Seiko Epson Corp | Switching element |
| JPS57113296A (en) * | 1980-12-29 | 1982-07-14 | Seiko Epson Corp | Switching element |
| DE3277665D1 (en) * | 1981-08-07 | 1987-12-17 | British Petroleum Co Plc | Non-volatile electrically programmable memory device |
| JPH0715587B2 (ja) * | 1985-06-25 | 1995-02-22 | 株式会社東芝 | 光導電性部材 |
| JPH0713748B2 (ja) * | 1985-06-25 | 1995-02-15 | 株式会社東芝 | 光導電性部材 |
| JPS62279672A (ja) * | 1986-05-28 | 1987-12-04 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
-
1978
- 1978-02-16 JP JP1674878A patent/JPS54109762A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54109762A (en) | 1979-08-28 |
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