FR2397876A1 - Procede de production de couches epitaxiales de materiaux semi-conducteurs - Google Patents

Procede de production de couches epitaxiales de materiaux semi-conducteurs

Info

Publication number
FR2397876A1
FR2397876A1 FR7821416A FR7821416A FR2397876A1 FR 2397876 A1 FR2397876 A1 FR 2397876A1 FR 7821416 A FR7821416 A FR 7821416A FR 7821416 A FR7821416 A FR 7821416A FR 2397876 A1 FR2397876 A1 FR 2397876A1
Authority
FR
France
Prior art keywords
production
semiconductor materials
epitaxial layers
semiconductor material
transition metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7821416A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of FR2397876A1 publication Critical patent/FR2397876A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Procédé de production d'une couche épitaxiale de matériau semi-conducteur appartenant aux groupes III-V dopé par un élément dopant constitué par un metal de transition. On forme un mélange en phase vapeur comportant les vapeurs d'un alcoyle d'un métal du groupe III, un hydrure d'un élement du groupe V et un compose volatif de l'élément dopant constitué par un métal de transition, et on fait passer le mélange en phase vapeur sur un substrat chauffé de façon à produire le matériau semi-conducteur appartenant aux groupes III-V sous forme d'une couche sur le substrat. Application à la fabrication de transistors.
FR7821416A 1977-07-19 1978-07-19 Procede de production de couches epitaxiales de materiaux semi-conducteurs Withdrawn FR2397876A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3034577A GB1600286A (en) 1977-07-19 1977-07-19 Doping of group iii-v semiconductor materials

Publications (1)

Publication Number Publication Date
FR2397876A1 true FR2397876A1 (fr) 1979-02-16

Family

ID=10306172

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7821416A Withdrawn FR2397876A1 (fr) 1977-07-19 1978-07-19 Procede de production de couches epitaxiales de materiaux semi-conducteurs

Country Status (3)

Country Link
JP (1) JPS5422159A (fr)
FR (1) FR2397876A1 (fr)
GB (1) GB1600286A (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0141561A2 (fr) * 1983-10-21 1985-05-15 AT&T Corp. Procédé pour la production de composants ayant des compositions semi-isolantes basées sur le phosphure d'indium
FR2591799A1 (fr) * 1985-12-18 1987-06-19 Heraeus Schott Quarzschmelze Tube a double paroi en verre de silice pour l'execution de processus de la technologie des semi-conducteurs
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
WO1989010983A1 (fr) * 1988-05-11 1989-11-16 Cvt Limited Cuve de reaction
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
US5128275A (en) * 1990-01-26 1992-07-07 Fujitsu Limited Method for fabricating a semiconductor device including a semi-insulating semiconductor layer
US6080642A (en) * 1997-04-10 2000-06-27 Jds Uniphase Corporation Method of manufacturing a semiconductor device and a device for applying such a method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106537B1 (fr) * 1982-10-19 1989-01-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Dépôt chimique en phase vapeur de films en partant de composés organométalliques
JPS6083324A (ja) * 1983-10-14 1985-05-11 Agency Of Ind Science & Technol 有機金属熱分解法による３−５族化合物半導体の製造方法
JPS6155916A (ja) * 1984-08-27 1986-03-20 Matsushita Electric Ind Co Ltd 気相成長方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0141561A2 (fr) * 1983-10-21 1985-05-15 AT&T Corp. Procédé pour la production de composants ayant des compositions semi-isolantes basées sur le phosphure d'indium
EP0141561A3 (en) * 1983-10-21 1986-04-02 American Telephone And Telegraph Company A process for producing devices having semi-insulating indium phosphide based compositions
FR2591799A1 (fr) * 1985-12-18 1987-06-19 Heraeus Schott Quarzschmelze Tube a double paroi en verre de silice pour l'execution de processus de la technologie des semi-conducteurs
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
WO1989010983A1 (fr) * 1988-05-11 1989-11-16 Cvt Limited Cuve de reaction
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
US5128275A (en) * 1990-01-26 1992-07-07 Fujitsu Limited Method for fabricating a semiconductor device including a semi-insulating semiconductor layer
US6080642A (en) * 1997-04-10 2000-06-27 Jds Uniphase Corporation Method of manufacturing a semiconductor device and a device for applying such a method

Also Published As

Publication number Publication date
GB1600286A (en) 1981-10-14
JPS5422159A (en) 1979-02-19

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