FR2362492A1 - Transistor a effet de champ a structure interdigitee et procedes de fabrication dudit transistor - Google Patents
Transistor a effet de champ a structure interdigitee et procedes de fabrication dudit transistorInfo
- Publication number
- FR2362492A1 FR2362492A1 FR7625230A FR7625230A FR2362492A1 FR 2362492 A1 FR2362492 A1 FR 2362492A1 FR 7625230 A FR7625230 A FR 7625230A FR 7625230 A FR7625230 A FR 7625230A FR 2362492 A1 FR2362492 A1 FR 2362492A1
- Authority
- FR
- France
- Prior art keywords
- field effect
- transistor
- substrate
- effect transistor
- prohibited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 238000001465 metallisation Methods 0.000 abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
L'invention a pour but d'éviter les croisements de connexion, sources de capacités parasites, dans les structures interdigitées, notamment pour les transistors à effet de champ. Parmi les quatre procédés proposés, l'un des plus simples consiste à utiliser un substrat conducteur, P** + par exemple, séparé de la couche N où est formé le transistor à effet de champ, par une couche semi-conductrice à très forte résistivité (F.R). On grave des rainures parallèles 44 entamant les deux couches en mettant à nu le substrat P**+. Des métallisations d'électrodes, de drain D par exemple, sont déposées dans ces rainures en les débordant L'interconnexion des électrodes D s'opère par une métallisation, 46 de la face inférieure du substrat L'invention s'applique aux transistors de puissance en hyperfréquence
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7625230A FR2362492A1 (fr) | 1976-08-19 | 1976-08-19 | Transistor a effet de champ a structure interdigitee et procedes de fabrication dudit transistor |
GB3442577A GB1585376A (en) | 1976-08-19 | 1977-08-16 | Field effect transistor having an interdigital structure |
DE19772737503 DE2737503A1 (de) | 1976-08-19 | 1977-08-19 | Feldeffekttransistor mit interdigitalstruktur und verfahren zu seiner herstellung |
JP9939177A JPS5324788A (en) | 1976-08-19 | 1977-08-19 | Fet transistor having composite structure and method of producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7625230A FR2362492A1 (fr) | 1976-08-19 | 1976-08-19 | Transistor a effet de champ a structure interdigitee et procedes de fabrication dudit transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2362492A1 true FR2362492A1 (fr) | 1978-03-17 |
FR2362492B1 FR2362492B1 (fr) | 1982-06-18 |
Family
ID=9177008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7625230A Granted FR2362492A1 (fr) | 1976-08-19 | 1976-08-19 | Transistor a effet de champ a structure interdigitee et procedes de fabrication dudit transistor |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5324788A (fr) |
DE (1) | DE2737503A1 (fr) |
FR (1) | FR2362492A1 (fr) |
GB (1) | GB1585376A (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2455799A1 (fr) * | 1979-05-02 | 1980-11-28 | Philips Nv | Transistor a effet de champ a electrode de grille isolee et procede pour la fabrication de ce transistor |
EP0111181A2 (fr) * | 1982-12-08 | 1984-06-20 | Siemens Aktiengesellschaft | Composant semi-conducteur ayant un trou de contact |
EP0124423A1 (fr) * | 1983-04-29 | 1984-11-07 | Thomson-Csf | Amplificateur hyperfréquence de puissance |
FR2637737A1 (fr) * | 1988-10-07 | 1990-04-13 | Thomson Hybrides Microondes | Transistor de puissance en materiaux iii-v sur substrat silicium, et son procede de fabrication |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5448574U (fr) * | 1977-08-19 | 1979-04-04 | ||
JP5985282B2 (ja) * | 2012-07-12 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
1976
- 1976-08-19 FR FR7625230A patent/FR2362492A1/fr active Granted
-
1977
- 1977-08-16 GB GB3442577A patent/GB1585376A/en not_active Expired
- 1977-08-19 DE DE19772737503 patent/DE2737503A1/de not_active Withdrawn
- 1977-08-19 JP JP9939177A patent/JPS5324788A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2455799A1 (fr) * | 1979-05-02 | 1980-11-28 | Philips Nv | Transistor a effet de champ a electrode de grille isolee et procede pour la fabrication de ce transistor |
EP0111181A2 (fr) * | 1982-12-08 | 1984-06-20 | Siemens Aktiengesellschaft | Composant semi-conducteur ayant un trou de contact |
EP0111181A3 (en) * | 1982-12-08 | 1986-07-09 | Siemens Aktiengesellschaft | Semiconductor component with a contact hole |
US4903112A (en) * | 1982-12-08 | 1990-02-20 | Siemens Aktiengesellschaft | Semiconductor component with contact hole |
EP0124423A1 (fr) * | 1983-04-29 | 1984-11-07 | Thomson-Csf | Amplificateur hyperfréquence de puissance |
FR2637737A1 (fr) * | 1988-10-07 | 1990-04-13 | Thomson Hybrides Microondes | Transistor de puissance en materiaux iii-v sur substrat silicium, et son procede de fabrication |
Also Published As
Publication number | Publication date |
---|---|
DE2737503A1 (de) | 1978-02-23 |
GB1585376A (en) | 1981-03-04 |
FR2362492B1 (fr) | 1982-06-18 |
JPS5324788A (en) | 1978-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |