JPS5324788A - Fet transistor having composite structure and method of producing same - Google Patents

Fet transistor having composite structure and method of producing same

Info

Publication number
JPS5324788A
JPS5324788A JP9939177A JP9939177A JPS5324788A JP S5324788 A JPS5324788 A JP S5324788A JP 9939177 A JP9939177 A JP 9939177A JP 9939177 A JP9939177 A JP 9939177A JP S5324788 A JPS5324788 A JP S5324788A
Authority
JP
Japan
Prior art keywords
composite structure
producing same
fet transistor
fet
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9939177A
Other languages
Japanese (ja)
Inventor
Giboo Pieeru
Anrii Reimon
Rabiron Mishieru
Dourubonko Anrii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5324788A publication Critical patent/JPS5324788A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
JP9939177A 1976-08-19 1977-08-19 Fet transistor having composite structure and method of producing same Pending JPS5324788A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7625230A FR2362492A1 (en) 1976-08-19 1976-08-19 FIELD EFFECT TRANSISTOR WITH PROHIBITED STRUCTURE AND METHODS FOR MANUFACTURING THE SAID TRANSISTOR

Publications (1)

Publication Number Publication Date
JPS5324788A true JPS5324788A (en) 1978-03-07

Family

ID=9177008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9939177A Pending JPS5324788A (en) 1976-08-19 1977-08-19 Fet transistor having composite structure and method of producing same

Country Status (4)

Country Link
JP (1) JPS5324788A (en)
DE (1) DE2737503A1 (en)
FR (1) FR2362492A1 (en)
GB (1) GB1585376A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448574U (en) * 1977-08-19 1979-04-04

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2049273B (en) * 1979-05-02 1983-05-25 Philips Electronic Associated Method for short-circuting igfet source regions to a substrate
DE3245457A1 (en) * 1982-12-08 1984-06-14 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR ELEMENT WITH CONTACT HOLE
FR2545295B1 (en) * 1983-04-29 1985-07-12 Thomson Csf POWER MICROWAVE AMPLIFIER
FR2637737A1 (en) * 1988-10-07 1990-04-13 Thomson Hybrides Microondes III-V material power transistor on a silicon substrate, and its method of manufacture
JP5985282B2 (en) * 2012-07-12 2016-09-06 ルネサスエレクトロニクス株式会社 Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5448574U (en) * 1977-08-19 1979-04-04

Also Published As

Publication number Publication date
FR2362492A1 (en) 1978-03-17
FR2362492B1 (en) 1982-06-18
GB1585376A (en) 1981-03-04
DE2737503A1 (en) 1978-02-23

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