FR2361151A1 - Procede de preparation d'un materiau semiconducteur pur elementaire - Google Patents

Procede de preparation d'un materiau semiconducteur pur elementaire

Info

Publication number
FR2361151A1
FR2361151A1 FR7724702A FR7724702A FR2361151A1 FR 2361151 A1 FR2361151 A1 FR 2361151A1 FR 7724702 A FR7724702 A FR 7724702A FR 7724702 A FR7724702 A FR 7724702A FR 2361151 A1 FR2361151 A1 FR 2361151A1
Authority
FR
France
Prior art keywords
semiconductor material
preparation
elementary semiconductor
pure
pure elementary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7724702A
Other languages
English (en)
French (fr)
Other versions
FR2361151B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of FR2361151A1 publication Critical patent/FR2361151A1/fr
Application granted granted Critical
Publication of FR2361151B1 publication Critical patent/FR2361151B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1818—Feeding of the fluidising gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1836—Heating and cooling the reactor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/16—Dry methods smelting of sulfides or formation of mattes with volatilisation or condensation of the metal being produced
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00106—Controlling the temperature by indirect heat exchange
    • B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
    • B01J2208/00176—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles outside the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00106—Controlling the temperature by indirect heat exchange
    • B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
    • B01J2208/00203—Coils

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7724702A 1976-08-12 1977-08-11 Procede de preparation d'un materiau semiconducteur pur elementaire Granted FR2361151A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762636348 DE2636348A1 (de) 1976-08-12 1976-08-12 Verfahren zur herstellung von reinem, elementarem halbleitermaterial

Publications (2)

Publication Number Publication Date
FR2361151A1 true FR2361151A1 (fr) 1978-03-10
FR2361151B1 FR2361151B1 (enExample) 1980-02-01

Family

ID=5985325

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724702A Granted FR2361151A1 (fr) 1976-08-12 1977-08-11 Procede de preparation d'un materiau semiconducteur pur elementaire

Country Status (7)

Country Link
US (1) US4132763A (enExample)
BE (1) BE857689A (enExample)
DE (1) DE2636348A1 (enExample)
DK (1) DK358077A (enExample)
FR (1) FR2361151A1 (enExample)
GB (1) GB1572479A (enExample)
NL (1) NL7707755A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265859A (en) * 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
US4668493A (en) * 1982-06-22 1987-05-26 Harry Levin Process for making silicon
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
FR2572312B1 (fr) * 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4921026A (en) * 1988-06-01 1990-05-01 Union Carbide Chemicals And Plastics Company Inc. Polycrystalline silicon capable of yielding long lifetime single crystalline silicon
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
JPH0850720A (ja) * 1994-06-01 1996-02-20 Kao Corp 記録媒体用ガラス状炭素基板の製造方法及び焼成用支持装置
IL134891A0 (en) * 2000-03-06 2001-05-20 Yeda Res & Dev Reactors for production of tungsten disulfide hollow onion-like nanoparticles
IL139266A0 (en) * 2000-10-25 2001-11-25 Yeda Res & Dev A method and apparatus for producing inorganic fullerene-like nanoparticles
DE10151159A1 (de) * 2001-10-19 2003-04-30 Silicon Technologies As Hoevik Verfahren zur Herstellung von hochreinem Silizium
US7727483B2 (en) * 2004-08-19 2010-06-01 Tokuyama Corporation Reactor for chlorosilane compound
FR2913884A1 (fr) * 2007-03-21 2008-09-26 Oralance Pharma Sa Systeme galenique hydrophobe non ionisable
CN101837977B (zh) * 2010-03-12 2013-02-13 江苏中能硅业科技发展有限公司 硅单质的生产方法及生产设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA546346A (en) * 1957-09-17 M. Wilson Jack Methods of producing silicon of high purity
CA615899A (en) * 1961-03-07 G. Penhale Leighton Production of silicon
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
DE1025845B (de) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Verfahren zur Herstellung von reinstem Silicium
GB878765A (en) * 1956-11-05 1961-10-04 Plessey Co Ltd Improvements in and relating to processes for the manufacture of semiconductor materials
FR1194484A (fr) * 1958-01-24 1959-11-10 Electro Chimie Soc D Procédé d'obtention de silicium pur par cristallisation fractionnée
NL238750A (enExample) * 1958-05-14
US4054641A (en) * 1976-05-07 1977-10-18 John S. Pennish Method for making vitreous silica

Also Published As

Publication number Publication date
NL7707755A (nl) 1978-02-14
DE2636348A1 (de) 1978-02-16
US4132763A (en) 1979-01-02
DK358077A (da) 1978-02-13
BE857689A (fr) 1978-02-13
GB1572479A (en) 1980-07-30
FR2361151B1 (enExample) 1980-02-01

Similar Documents

Publication Publication Date Title
FR2361151A1 (fr) Procede de preparation d'un materiau semiconducteur pur elementaire
GB769674A (en) Processes for the control of solute segregation
FR2446252A1 (fr) Nitrure de silicium de haute purete et procede pour la preparation de celui-ci
FR2395969A1 (fr) Compositions pour ciments a base d'amiante, leur procede de production et leurs applications
GB1286024A (en) Method of producing single semiconductor crystals
US3085871A (en) Method for producing the refractory metals hafnium, titanium, vanadium, silicon, zirconium, thorium, columbium, and chromium
GB990163A (en) Method and apparatus for growing semiconductor crystals
GB990026A (en) Process for the production of binary compounds of high purity
FR2380986A1 (fr) Nouveau procede de stabilisation du metasilicate de sodium anhydre et produit ainsi obtenu
BE901114A (fr) Procede pour fabriquer du silicium a partir de quartz sous forme de materiaux brut dans un bas fourneau electrique.
FR2388763A1 (fr) Procede de preparation de nitrure de silicium
US4032315A (en) Method for the production of quartz-glass objects by drawing
US4662980A (en) Process for preparing crystals of Hg1-x Cdx Te
FR2357185A1 (fr) Procede de fabrication de caramels durs
FR2409317A1 (fr) Procede de recuperation de nickel a partir de dechets
GB1152415A (en) Improvements in or relating to the processing of semiconductor materials
US3297403A (en) Method for the preparation of intermetallic compounds
US3690847A (en) Method of producing highly pure,particularly silicon free gallium arsenide
FR2362473A1 (fr) Procede pour la fabrication d'elements combustibles, en forme de blocs, pour reacteurs a haute temperature
US2988464A (en) Method of making transistor having thin base region
BE610603A (fr) Procédé de fabrication d'un monocristal de silicium, exempt de dislocations, par la méthode de la fusion par zone sans creuset
White Salyut 6' Cosmonauts Break More Space Records
GB1300235A (en) Preparation and purification of semiconducting gallium compounds
US837160A (en) Production of fused metals and alloys from oxids, &c.
GB983953A (en) Continuous process for the manufacture of silicon tetrachloride and/or trichlorosilane

Legal Events

Date Code Title Description
ST Notification of lapse