BE857689A - Procede de preparation d'un materiau semi-conducteur pur elementaire - Google Patents
Procede de preparation d'un materiau semi-conducteur pur elementaireInfo
- Publication number
- BE857689A BE857689A BE180081A BE180081A BE857689A BE 857689 A BE857689 A BE 857689A BE 180081 A BE180081 A BE 180081A BE 180081 A BE180081 A BE 180081A BE 857689 A BE857689 A BE 857689A
- Authority
- BE
- Belgium
- Prior art keywords
- preparation
- semiconductor material
- elementary semiconductor
- pure elementary
- pure
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1818—Feeding of the fluidising gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1836—Heating and cooling the reactor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/16—Dry methods smelting of sulfides or formation of mattes with volatilisation or condensation of the metal being produced
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00106—Controlling the temperature by indirect heat exchange
- B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
- B01J2208/00176—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles outside the reactor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00106—Controlling the temperature by indirect heat exchange
- B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
- B01J2208/00203—Coils
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762636348 DE2636348A1 (de) | 1976-08-12 | 1976-08-12 | Verfahren zur herstellung von reinem, elementarem halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
BE857689A true BE857689A (fr) | 1978-02-13 |
Family
ID=5985325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE180081A BE857689A (fr) | 1976-08-12 | 1977-08-11 | Procede de preparation d'un materiau semi-conducteur pur elementaire |
Country Status (7)
Country | Link |
---|---|
US (1) | US4132763A (xx) |
BE (1) | BE857689A (xx) |
DE (1) | DE2636348A1 (xx) |
DK (1) | DK358077A (xx) |
FR (1) | FR2361151A1 (xx) |
GB (1) | GB1572479A (xx) |
NL (1) | NL7707755A (xx) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4265859A (en) * | 1978-05-31 | 1981-05-05 | Energy Materials Corporation | Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system |
US4668493A (en) * | 1982-06-22 | 1987-05-26 | Harry Levin | Process for making silicon |
US4590043A (en) * | 1982-12-27 | 1986-05-20 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
FR2572312B1 (fr) * | 1984-10-30 | 1989-01-20 | Rhone Poulenc Spec Chim | Procede de fabrication de barreaux de silicium ultra-pur |
US4921026A (en) * | 1988-06-01 | 1990-05-01 | Union Carbide Chemicals And Plastics Company Inc. | Polycrystalline silicon capable of yielding long lifetime single crystalline silicon |
US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
JPH0850720A (ja) * | 1994-06-01 | 1996-02-20 | Kao Corp | 記録媒体用ガラス状炭素基板の製造方法及び焼成用支持装置 |
IL134891A0 (en) * | 2000-03-06 | 2001-05-20 | Yeda Res & Dev | Reactors for production of tungsten disulfide hollow onion-like nanoparticles |
IL139266A0 (en) * | 2000-10-25 | 2001-11-25 | Yeda Res & Dev | A method and apparatus for producing inorganic fullerene-like nanoparticles |
DE10151159A1 (de) * | 2001-10-19 | 2003-04-30 | Silicon Technologies As Hoevik | Verfahren zur Herstellung von hochreinem Silizium |
US7727483B2 (en) * | 2004-08-19 | 2010-06-01 | Tokuyama Corporation | Reactor for chlorosilane compound |
FR2913884A1 (fr) * | 2007-03-21 | 2008-09-26 | Oralance Pharma Sa | Systeme galenique hydrophobe non ionisable |
CN101837977B (zh) * | 2010-03-12 | 2013-02-13 | 江苏中能硅业科技发展有限公司 | 硅单质的生产方法及生产设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA546346A (en) * | 1957-09-17 | M. Wilson Jack | Methods of producing silicon of high purity | |
CA615899A (en) * | 1961-03-07 | G. Penhale Leighton | Production of silicon | |
DE1017795B (de) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen |
DE1025845B (de) * | 1955-07-29 | 1958-03-13 | Wacker Chemie Gmbh | Verfahren zur Herstellung von reinstem Silicium |
GB878765A (en) * | 1956-11-05 | 1961-10-04 | Plessey Co Ltd | Improvements in and relating to processes for the manufacture of semiconductor materials |
FR1194484A (fr) * | 1958-01-24 | 1959-11-10 | Electro Chimie Soc D | Procédé d'obtention de silicium pur par cristallisation fractionnée |
NL238750A (xx) * | 1958-05-14 | |||
US4054641A (en) * | 1976-05-07 | 1977-10-18 | John S. Pennish | Method for making vitreous silica |
-
1976
- 1976-08-12 DE DE19762636348 patent/DE2636348A1/de not_active Withdrawn
-
1977
- 1977-06-29 US US05/811,029 patent/US4132763A/en not_active Expired - Lifetime
- 1977-07-12 NL NL7707755A patent/NL7707755A/xx not_active Application Discontinuation
- 1977-07-21 GB GB30679/77A patent/GB1572479A/en not_active Expired
- 1977-08-11 FR FR7724702A patent/FR2361151A1/fr active Granted
- 1977-08-11 BE BE180081A patent/BE857689A/xx unknown
- 1977-08-11 DK DK358077A patent/DK358077A/da not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
GB1572479A (en) | 1980-07-30 |
NL7707755A (nl) | 1978-02-14 |
FR2361151A1 (fr) | 1978-03-10 |
DE2636348A1 (de) | 1978-02-16 |
US4132763A (en) | 1979-01-02 |
FR2361151B1 (xx) | 1980-02-01 |
DK358077A (da) | 1978-02-13 |
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