FR2360992A1 - Procede de fabrication de transistors a effet de champ de type mos a canal court - Google Patents

Procede de fabrication de transistors a effet de champ de type mos a canal court

Info

Publication number
FR2360992A1
FR2360992A1 FR7720728A FR7720728A FR2360992A1 FR 2360992 A1 FR2360992 A1 FR 2360992A1 FR 7720728 A FR7720728 A FR 7720728A FR 7720728 A FR7720728 A FR 7720728A FR 2360992 A1 FR2360992 A1 FR 2360992A1
Authority
FR
France
Prior art keywords
channel mos
type field
effect transistors
short channel
manufacturing short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7720728A
Other languages
English (en)
French (fr)
Other versions
FR2360992B1 (Direct
Inventor
William S Johnson
Ronald W Knepper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2360992A1 publication Critical patent/FR2360992A1/fr
Application granted granted Critical
Publication of FR2360992B1 publication Critical patent/FR2360992B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P76/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7720728A 1976-08-05 1977-06-30 Procede de fabrication de transistors a effet de champ de type mos a canal court Granted FR2360992A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/711,947 US4078947A (en) 1976-08-05 1976-08-05 Method for forming a narrow channel length MOS field effect transistor

Publications (2)

Publication Number Publication Date
FR2360992A1 true FR2360992A1 (fr) 1978-03-03
FR2360992B1 FR2360992B1 (Direct) 1979-03-30

Family

ID=24860153

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7720728A Granted FR2360992A1 (fr) 1976-08-05 1977-06-30 Procede de fabrication de transistors a effet de champ de type mos a canal court

Country Status (5)

Country Link
US (1) US4078947A (Direct)
JP (1) JPS5318984A (Direct)
DE (1) DE2734694A1 (Direct)
FR (1) FR2360992A1 (Direct)
GB (1) GB1526679A (Direct)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019119A3 (en) * 1979-05-21 1983-01-19 International Business Machines Corporation Method of forming a short-channel field-effect transistor and field-effect transistor made by that method

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2619663C3 (de) * 1976-05-04 1982-07-22 Siemens AG, 1000 Berlin und 8000 München Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4276095A (en) * 1977-08-31 1981-06-30 International Business Machines Corporation Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations
US4217599A (en) * 1977-12-21 1980-08-12 Tektronix, Inc. Narrow channel MOS devices and method of manufacturing
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
US4178605A (en) * 1978-01-30 1979-12-11 Rca Corp. Complementary MOS inverter structure
US4454524A (en) * 1978-03-06 1984-06-12 Ncr Corporation Device having implantation for controlling gate parasitic action
US4212683A (en) * 1978-03-27 1980-07-15 Ncr Corporation Method for making narrow channel FET
US4485390A (en) * 1978-03-27 1984-11-27 Ncr Corporation Narrow channel FET
US4145233A (en) * 1978-05-26 1979-03-20 Ncr Corporation Method for making narrow channel FET by masking and ion-implantation
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4261761A (en) * 1979-09-04 1981-04-14 Tektronix, Inc. Method of manufacturing sub-micron channel width MOS transistor
US4257826A (en) * 1979-10-11 1981-03-24 Texas Instruments Incorporated Photoresist masking in manufacture of semiconductor device
US4280855A (en) * 1980-01-23 1981-07-28 Ibm Corporation Method of making a dual DMOS device by ion implantation and diffusion
US4315781A (en) * 1980-04-23 1982-02-16 Hughes Aircraft Company Method of controlling MOSFET threshold voltage with self-aligned channel stop
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors
DE3108726A1 (de) * 1981-03-07 1982-09-16 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte referenzspannungsquelle
US5118631A (en) * 1981-07-10 1992-06-02 Loral Fairchild Corporation Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
US4599118A (en) * 1981-12-30 1986-07-08 Mostek Corporation Method of making MOSFET by multiple implantations followed by a diffusion step
USRE32800E (en) * 1981-12-30 1988-12-13 Sgs-Thomson Microelectronics, Inc. Method of making mosfet by multiple implantations followed by a diffusion step
US4633572A (en) * 1983-02-22 1987-01-06 General Motors Corporation Programming power paths in an IC by combined depletion and enhancement implants
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
KR940004847A (ko) * 1992-08-04 1994-03-16 리차드 제이. 컬 낮은 드레쉬 홀드 전압을 갖는 에피택셜 이중 확산형 금속 산화 실리콘(dmos) 트랜지스터 구조체 형성방법
US5453392A (en) * 1993-12-02 1995-09-26 United Microelectronics Corporation Process for forming flat-cell mask ROMS
US5547895A (en) * 1994-08-31 1996-08-20 United Microelectronics Corp. Method of fabricating a metal gate MOS transistor with self-aligned first conductivity type source and drain regions and second conductivity type contact regions
US5573961A (en) * 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process
US6867100B2 (en) * 2001-12-28 2005-03-15 Texas Instruments Incorporated System for high-precision double-diffused MOS transistors
US20060049464A1 (en) * 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
TWI349310B (en) * 2007-07-09 2011-09-21 Nanya Technology Corp Method of fabricating a semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7007988A (Direct) * 1969-09-18 1971-03-22
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion
FR2325192A1 (fr) * 1975-09-17 1977-04-15 Philips Nv Procede pour la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur fabrique de la sorte

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1226080A (Direct) * 1967-11-28 1971-03-24
US3967981A (en) * 1971-01-14 1976-07-06 Shumpei Yamazaki Method for manufacturing a semiconductor field effort transistor
JPS529350B2 (Direct) * 1971-12-08 1977-03-15
US3926694A (en) * 1972-07-24 1975-12-16 Signetics Corp Double diffused metal oxide semiconductor structure with isolated source and drain and method
US3895390A (en) * 1972-11-24 1975-07-15 Signetics Corp Metal oxide semiconductor structure and method using ion implantation
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices
DE2335333B1 (de) * 1973-07-11 1975-01-16 Siemens Ag Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik
US3876472A (en) * 1974-04-15 1975-04-08 Rca Corp Method of achieving semiconductor substrates having similar surface resistivity
JPS5136882A (ja) * 1974-09-24 1976-03-27 Nippon Electric Co Denkaikokahandotaisochinoseizohoho

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7007988A (Direct) * 1969-09-18 1971-03-22
US3883372A (en) * 1973-07-11 1975-05-13 Westinghouse Electric Corp Method of making a planar graded channel MOS transistor
US3909320A (en) * 1973-12-26 1975-09-30 Signetics Corp Method for forming MOS structure using double diffusion
FR2325192A1 (fr) * 1975-09-17 1977-04-15 Philips Nv Procede pour la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur fabrique de la sorte

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019119A3 (en) * 1979-05-21 1983-01-19 International Business Machines Corporation Method of forming a short-channel field-effect transistor and field-effect transistor made by that method

Also Published As

Publication number Publication date
JPS5318984A (en) 1978-02-21
DE2734694A1 (de) 1978-02-09
GB1526679A (en) 1978-09-27
FR2360992B1 (Direct) 1979-03-30
US4078947A (en) 1978-03-14

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