NL7007988A - - Google Patents

Info

Publication number
NL7007988A
NL7007988A NL7007988A NL7007988A NL7007988A NL 7007988 A NL7007988 A NL 7007988A NL 7007988 A NL7007988 A NL 7007988A NL 7007988 A NL7007988 A NL 7007988A NL 7007988 A NL7007988 A NL 7007988A
Authority
NL
Netherlands
Application number
NL7007988A
Other versions
NL140659B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP44073848A external-priority patent/JPS4831514B1/ja
Priority claimed from JP44073847A external-priority patent/JPS5125712B1/ja
Application filed filed Critical
Publication of NL7007988A publication Critical patent/NL7007988A/xx
Publication of NL140659B publication Critical patent/NL140659B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
NL707007988A 1969-09-18 1970-06-02 Werkwijze voor het vervaardigen van een veldeffecttransistor met een geisoleerde poort en een veldeffecttransistor vervaardigd volgens de werkwijze. NL140659B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP44073848A JPS4831514B1 (Direct) 1969-09-18 1969-09-18
JP44073847A JPS5125712B1 (Direct) 1969-09-18 1969-09-18

Publications (2)

Publication Number Publication Date
NL7007988A true NL7007988A (Direct) 1971-03-22
NL140659B NL140659B (nl) 1973-12-17

Family

ID=26414996

Family Applications (1)

Application Number Title Priority Date Filing Date
NL707007988A NL140659B (nl) 1969-09-18 1970-06-02 Werkwijze voor het vervaardigen van een veldeffecttransistor met een geisoleerde poort en een veldeffecttransistor vervaardigd volgens de werkwijze.

Country Status (4)

Country Link
US (1) US3764396A (Direct)
DE (1) DE2028146A1 (Direct)
GB (2) GB1316559A (Direct)
NL (1) NL140659B (Direct)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2360992A1 (fr) * 1976-08-05 1978-03-03 Ibm Procede de fabrication de transistors a effet de champ de type mos a canal court

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975221A (en) * 1973-08-29 1976-08-17 American Micro-Systems, Inc. Low capacitance V groove MOS NOR gate and method of manufacture
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors
JPS5431872B2 (Direct) * 1974-09-06 1979-10-09
US4033787A (en) * 1975-10-06 1977-07-05 Honeywell Inc. Fabrication of semiconductor devices utilizing ion implantation
US4038107B1 (en) * 1975-12-03 1995-04-18 Samsung Semiconductor Tele Method for making transistor structures
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
EP0139663A1 (en) * 1983-04-04 1985-05-08 Motorola, Inc. Self-aligned ldmos and method
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
DE69429913T2 (de) * 1994-06-23 2002-10-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
US6426673B2 (en) 1997-07-30 2002-07-30 Programmable Silicon Solutions High performance integrated radio frequency circuit devices
US6535034B1 (en) 1997-07-30 2003-03-18 Programmable Silicon Solutions High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries
US5841694A (en) * 1997-07-30 1998-11-24 Programmable Silicon Solutions High performance programmable interconnect
US6077746A (en) * 1999-08-26 2000-06-20 Taiwan Semiconductor Manufacturing Company Using p-type halo implant as ROM cell isolation in flat-cell mask ROM process
JP2010114179A (ja) * 2008-11-05 2010-05-20 Hitachi Displays Ltd 表示装置および表示装置の製造方法
CN111785784B (zh) * 2020-07-20 2025-10-28 杭州奥罗拉半导体有限公司 功率半导体器件及其形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2360992A1 (fr) * 1976-08-05 1978-03-03 Ibm Procede de fabrication de transistors a effet de champ de type mos a canal court

Also Published As

Publication number Publication date
US3764396A (en) 1973-10-09
DE2028146A1 (de) 1971-04-08
NL140659B (nl) 1973-12-17
GB1313829A (en) 1973-04-18
GB1316559A (en) 1973-05-09

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