FR2345209A2 - Growing large diameter crystals esp. for semiconductor substrates - by Verneuil method with additional flame heating of flame deflector - Google Patents
Growing large diameter crystals esp. for semiconductor substrates - by Verneuil method with additional flame heating of flame deflectorInfo
- Publication number
- FR2345209A2 FR2345209A2 FR7705914A FR7705914A FR2345209A2 FR 2345209 A2 FR2345209 A2 FR 2345209A2 FR 7705914 A FR7705914 A FR 7705914A FR 7705914 A FR7705914 A FR 7705914A FR 2345209 A2 FR2345209 A2 FR 2345209A2
- Authority
- FR
- France
- Prior art keywords
- flame
- esp
- crystal
- large diameter
- semiconductor substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The Parent Patent described an appts. for monocrystal prodn. by the Verneuil process utilising a seed crystal, mounted on an axially movable support and subjected at its top to a downward flame; powdered material is projected downwards onto the seed crystal and fused there by means of the flame. A hollow inert for "torpedo" is coaxially mounted around the crystal and has a conical end directed against the flow of the flame in the region of the crystal, thus directing the flame outwards. In the Patent of Addition, additional heating of this insert or torpedo is provided by an auxiliary heating appts., which supplies flame gases into the furnace space at a level below the upper end of the inserts so that the flames spread downwards and along the insert. Esp. used for prodn. of sapphire and spinel crystals of large cross-section, for slicing into discs used as substrates in semiconductors. Enables diameters of 35-40 mm. to be attained and even larger diameters e.g. of 50-60 mm. may be achieved.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762613006 DE2613006A1 (en) | 1976-03-26 | 1976-03-26 | DEVICE FOR THE PRODUCTION OF SINGLE CRYSTALS ACCORDING TO VERNEUIL |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2345209A2 true FR2345209A2 (en) | 1977-10-21 |
Family
ID=5973554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7705914A Pending FR2345209A2 (en) | 1976-03-26 | 1977-03-01 | Growing large diameter crystals esp. for semiconductor substrates - by Verneuil method with additional flame heating of flame deflector |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52117289A (en) |
| CH (1) | CH597906A5 (en) |
| DE (1) | DE2613006A1 (en) |
| FR (1) | FR2345209A2 (en) |
| IT (1) | IT1115509B (en) |
-
1976
- 1976-03-26 DE DE19762613006 patent/DE2613006A1/en active Pending
-
1977
- 1977-02-15 CH CH182877A patent/CH597906A5/xx not_active IP Right Cessation
- 1977-03-01 FR FR7705914A patent/FR2345209A2/en active Pending
- 1977-03-23 IT IT2157777A patent/IT1115509B/en active
- 1977-03-25 JP JP3317477A patent/JPS52117289A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CH597906A5 (en) | 1978-04-14 |
| JPS52117289A (en) | 1977-10-01 |
| IT1115509B (en) | 1986-02-03 |
| DE2613006A1 (en) | 1977-09-29 |
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