JPS54119375A - Pulling-up apparatus for silicon single crystal - Google Patents

Pulling-up apparatus for silicon single crystal

Info

Publication number
JPS54119375A
JPS54119375A JP2656778A JP2656778A JPS54119375A JP S54119375 A JPS54119375 A JP S54119375A JP 2656778 A JP2656778 A JP 2656778A JP 2656778 A JP2656778 A JP 2656778A JP S54119375 A JPS54119375 A JP S54119375A
Authority
JP
Japan
Prior art keywords
pipe
single crystal
pulling
gas
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2656778A
Other languages
Japanese (ja)
Inventor
Sadao Yasuda
Yushi Kase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2656778A priority Critical patent/JPS54119375A/en
Publication of JPS54119375A publication Critical patent/JPS54119375A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To provide a pulling-up apparatus producing excellent Si single crystal of very low carbon content, by installing, above a crucible contg. Si polycrystal, a gas-purging pipe which makes it possible to charge inert gas upon occasion, with its inner diameter and the distance from its lower end to the upper end of the crucible specified.
CONSTITUTION: The ratio of the diameter A of a gas-purging pipe 15 at the lower end to the diameter C of a crucible 5 is set at A/C≥0.5, and the distance B from the upper end of the crucibles 5, 6 to the lower end of the pipe 15 at B≤110 mm. During melting step of Si polycrystal 4, gas purge is conducted with inert gas such as Ar etc. through the pipe 15 so as to prepare Si single crystal which is pulled up. Consequently the pulled-up Si single crystal has very low carbon contamination. The pipe 15 never disturbs easiness of pulling-up operation for Si single crystal, and recharging operation for raw material because it is arranged at such a position that the pipe 15 never interferes with the operation using the inspection holes 8.
COPYRIGHT: (C)1979,JPO&Japio
JP2656778A 1978-03-10 1978-03-10 Pulling-up apparatus for silicon single crystal Pending JPS54119375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2656778A JPS54119375A (en) 1978-03-10 1978-03-10 Pulling-up apparatus for silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2656778A JPS54119375A (en) 1978-03-10 1978-03-10 Pulling-up apparatus for silicon single crystal

Publications (1)

Publication Number Publication Date
JPS54119375A true JPS54119375A (en) 1979-09-17

Family

ID=12197110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2656778A Pending JPS54119375A (en) 1978-03-10 1978-03-10 Pulling-up apparatus for silicon single crystal

Country Status (1)

Country Link
JP (1) JPS54119375A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661715U (en) * 1993-02-05 1994-08-30 本州製紙株式会社 Carton with outlet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661715U (en) * 1993-02-05 1994-08-30 本州製紙株式会社 Carton with outlet

Similar Documents

Publication Publication Date Title
KR960023271A (en) Single crystal manufacturing apparatus and manufacturing method
JPS6465086A (en) Apparatus and process for producing single crystal rod
JPS54119375A (en) Pulling-up apparatus for silicon single crystal
JPS5547300A (en) Crystal pulling device
JPS56160400A (en) Growing method for gallium nitride
JPS57205397A (en) Method and apparatus for growing single crystal
JPS5632397A (en) Silicon single crystal pulling apparatus
US5059401A (en) Monocrystal growing apparatus
JPS56104799A (en) Production of si single crystal and device therefor
JPS57111300A (en) Preparation of ceramic whisker
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
JPS54121283A (en) Manufacture of silicon single crystal by pulling method and apparatus therefor
JPS54121284A (en) Menufacture of silicon single crystal by pulling method
JPS5738397A (en) Apparatus and method for growing crystal
JPS55113694A (en) Single crystal growing device
JPS5717495A (en) Growing apparatus for single crystal
JPS55113695A (en) Single crystal growing device
JPS56105622A (en) Manufacture of silicon stick for semiconductor
JPS57170891A (en) Manufacture of single crystal
JPS5645897A (en) Manufacture of silicon carbide crystal
JPS6445796A (en) Apparatus for pulling up si single crystal and method therefor
JPS55149191A (en) Manufacture of silicon carbide crystal layer
JPS55158197A (en) Semiconductor single crystal manufacturing apparatus
JPS5727998A (en) Controlling apparatus for growth of crystal having uniform diameter
JPS5571693A (en) Production of single crystal