FR2317769B1 - - Google Patents

Info

Publication number
FR2317769B1
FR2317769B1 FR7619151A FR7619151A FR2317769B1 FR 2317769 B1 FR2317769 B1 FR 2317769B1 FR 7619151 A FR7619151 A FR 7619151A FR 7619151 A FR7619151 A FR 7619151A FR 2317769 B1 FR2317769 B1 FR 2317769B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7619151A
Other languages
French (fr)
Other versions
FR2317769A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2317769A1 publication Critical patent/FR2317769A1/fr
Application granted granted Critical
Publication of FR2317769B1 publication Critical patent/FR2317769B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69391—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/69433—
    • H10P36/03—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization
FR7619151A 1975-06-24 1976-06-23 Procede pour la suppression de la formation de defauts d'empilement dans des dispositifs au silicium Granted FR2317769A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/589,945 US3997368A (en) 1975-06-24 1975-06-24 Elimination of stacking faults in silicon devices: a gettering process

Publications (2)

Publication Number Publication Date
FR2317769A1 FR2317769A1 (fr) 1977-02-04
FR2317769B1 true FR2317769B1 (cg-RX-API-DMAC10.html) 1980-10-24

Family

ID=24360225

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7619151A Granted FR2317769A1 (fr) 1975-06-24 1976-06-23 Procede pour la suppression de la formation de defauts d'empilement dans des dispositifs au silicium

Country Status (11)

Country Link
US (1) US3997368A (cg-RX-API-DMAC10.html)
JP (1) JPS523381A (cg-RX-API-DMAC10.html)
BE (1) BE843164A (cg-RX-API-DMAC10.html)
CA (1) CA1046166A (cg-RX-API-DMAC10.html)
DE (1) DE2628087A1 (cg-RX-API-DMAC10.html)
ES (1) ES449145A1 (cg-RX-API-DMAC10.html)
FR (1) FR2317769A1 (cg-RX-API-DMAC10.html)
GB (1) GB1547897A (cg-RX-API-DMAC10.html)
IT (1) IT1062377B (cg-RX-API-DMAC10.html)
NL (1) NL7606846A (cg-RX-API-DMAC10.html)
SE (1) SE414562B (cg-RX-API-DMAC10.html)

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DE2537464A1 (de) * 1975-08-22 1977-03-03 Wacker Chemitronic Verfahren zur entfernung spezifischer kristallbaufehler aus halbleiterscheiben
JPS5297666A (en) * 1976-02-12 1977-08-16 Hitachi Ltd Production of semiconductor device containing pn junctions
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
DE2644208C3 (de) * 1976-09-30 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage
US4120706A (en) * 1977-09-16 1978-10-17 Harris Corporation Heteroepitaxial deposition of gap on silicon substrates
US4131487A (en) * 1977-10-26 1978-12-26 Western Electric Company, Inc. Gettering semiconductor wafers with a high energy laser beam
US4144099A (en) * 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
GB2007430B (en) * 1977-11-03 1982-03-03 Western Electric Co Semicinductor device and fabrication method
JPS54110783A (en) * 1978-02-20 1979-08-30 Hitachi Ltd Semiconductor substrate and its manufacture
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
FR2435818A1 (fr) * 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs
JPS583375B2 (ja) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
JPS5617011A (en) * 1979-07-23 1981-02-18 Toshiba Corp Semiconductor device and manufacture thereof
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
JPS5762538A (en) * 1980-10-01 1982-04-15 Nec Corp Manufacture of semiconductor device
IL64724A0 (en) * 1981-02-17 1982-03-31 Robins Co Inc A H 2-amino-3-(halobenzoyl)-methylphenylacetic acids and esters and salts thereof and pharmaceutical compositions containing them
US4415373A (en) * 1981-11-17 1983-11-15 Allied Corporation Laser process for gettering defects in semiconductor devices
AT384121B (de) * 1983-03-28 1987-10-12 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS60133734A (ja) * 1983-12-21 1985-07-16 Mitsubishi Electric Corp 半導体装置の製造方法
JPS60157228A (ja) * 1984-01-26 1985-08-17 Fujitsu Ltd 半導体ウエハ−
JPS6124240A (ja) * 1984-07-13 1986-02-01 Toshiba Corp 半導体基板
US4589928A (en) * 1984-08-21 1986-05-20 At&T Bell Laboratories Method of making semiconductor integrated circuits having backside gettered with phosphorus
US4659400A (en) * 1985-06-27 1987-04-21 General Instrument Corp. Method for forming high yield epitaxial wafers
US4830984A (en) * 1987-08-19 1989-05-16 Texas Instruments Incorporated Method for heteroepitaxial growth using tensioning layer on rear substrate surface
ES2084606T3 (es) * 1988-12-21 1996-05-16 At & T Corp Procedimiento de oxidacion termica de crecimiento modificado para oxidos delgados.
US5229306A (en) * 1989-12-27 1993-07-20 Texas Instruments Incorporated Backside gettering method employing a monocrystalline germanium-silicon layer
JPH06103714B2 (ja) * 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
US5223734A (en) * 1991-12-18 1993-06-29 Micron Technology, Inc. Semiconductor gettering process using backside chemical mechanical planarization (CMP) and dopant diffusion
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
US5562770A (en) * 1994-11-22 1996-10-08 International Business Machines Corporation Semiconductor manufacturing process for low dislocation defects
JP3242566B2 (ja) * 1995-04-27 2001-12-25 富士通株式会社 分析試料の調製方法、不純物の分析方法及び高純度燐酸の調製方法ならびに半導体装置の製造方法
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
US6190631B1 (en) * 1997-04-09 2001-02-20 Memc Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
CN1253610C (zh) * 1997-04-09 2006-04-26 Memc电子材料有限公司 低缺陷密度、自间隙原子受控制的硅
JPH10321635A (ja) * 1997-05-16 1998-12-04 Nec Corp 半導体装置及びその製造方法
RU2124784C1 (ru) * 1997-09-29 1999-01-10 Мокров Александр Борисович Способ устранения структурных дефектов в твердых телах
JP3690563B2 (ja) * 1998-04-28 2005-08-31 富士通株式会社 シリコン基板の評価方法及び半導体装置の製造方法
US6328795B2 (en) * 1998-06-26 2001-12-11 Memc Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
DE69913731T2 (de) * 1998-10-14 2004-10-14 Memc Electronic Materials, Inc. Im wesentlichen defektfreie epitaktische siliziumscheiben
US6358821B1 (en) 2000-07-19 2002-03-19 Chartered Semiconductor Manufacturing Inc. Method of copper transport prevention by a sputtered gettering layer on backside of wafer
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP1356139B1 (en) * 2001-01-26 2006-08-09 MEMC Electronic Materials, Inc. Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
JP2002270516A (ja) * 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
US7495254B2 (en) * 2005-08-30 2009-02-24 International Business Machines Corporation Test structure and method for detecting and studying crystal lattice dislocation defects in integrated circuit devices
EP2027312B1 (en) 2006-05-19 2015-02-18 MEMC Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
CN102933549B (zh) 2010-06-15 2015-08-12 巴斯夫欧洲公司 制备环状叔甲基胺的方法
US8637668B2 (en) 2010-06-15 2014-01-28 Basf Se Process for preparing a cyclic tertiary methylamine
EP2627644B1 (de) 2010-10-14 2014-12-10 Basf Se Verfahren zur herstellung eines zyklischen tertiären amins
US8933223B2 (en) 2010-10-14 2015-01-13 Basf Se Process for preparing a cyclic tertiary amine
US8436169B2 (en) 2010-10-29 2013-05-07 Basf Se Process for preparing 1,4-bishydroxyethylpiperazine
EP2632909B1 (de) 2010-10-29 2015-02-25 Basf Se Verfahren zur herstellung von 1,4-bishydroxyethyl-piperazin
US8884015B2 (en) 2012-06-01 2014-11-11 Basf Se Process for the preparation of a mono-N-alkypiperazine
EP2855443B1 (de) 2012-06-01 2016-03-30 Basf Se Verfahren zur herstellung eines mono-n-alkyl-piperazins
US8981093B2 (en) 2012-06-06 2015-03-17 Basf Se Process for preparing piperazine
DE102013204839A1 (de) 2013-03-19 2014-09-25 Siltronic Ag Verfahren zum Polieren einer Scheibe aus Halbleitermaterial
US10937665B2 (en) * 2016-09-30 2021-03-02 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
RU2680606C1 (ru) * 2018-01-23 2019-02-25 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковых структур
JP7476039B2 (ja) 2020-09-02 2024-04-30 キオクシア株式会社 半導体装置の検査装置、及び、半導体装置の検査方法

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Also Published As

Publication number Publication date
CA1046166A (en) 1979-01-09
DE2628087A1 (de) 1977-01-20
SE414562B (sv) 1980-08-04
JPS613088B2 (cg-RX-API-DMAC10.html) 1986-01-30
GB1547897A (en) 1979-06-27
NL7606846A (nl) 1976-12-28
JPS523381A (en) 1977-01-11
BE843164A (fr) 1976-10-18
FR2317769A1 (fr) 1977-02-04
US3997368A (en) 1976-12-14
ES449145A1 (es) 1977-12-01
IT1062377B (it) 1984-10-10
DE2628087C2 (cg-RX-API-DMAC10.html) 1988-08-04
SE7606869L (sv) 1976-12-25

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Legal Events

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ST Notification of lapse