FR2314583A1 - Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p. - Google Patents

Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p.

Info

Publication number
FR2314583A1
FR2314583A1 FR7617582A FR7617582A FR2314583A1 FR 2314583 A1 FR2314583 A1 FR 2314583A1 FR 7617582 A FR7617582 A FR 7617582A FR 7617582 A FR7617582 A FR 7617582A FR 2314583 A1 FR2314583 A1 FR 2314583A1
Authority
FR
France
Prior art keywords
type channel
integrated circuit
device including
circuit device
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7617582A
Other languages
English (en)
French (fr)
Other versions
FR2314583B1 (xx
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2314583A1 publication Critical patent/FR2314583A1/fr
Application granted granted Critical
Publication of FR2314583B1 publication Critical patent/FR2314583B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7617582A 1975-06-11 1976-06-10 Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p. Granted FR2314583A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58587475A 1975-06-11 1975-06-11

Publications (2)

Publication Number Publication Date
FR2314583A1 true FR2314583A1 (fr) 1977-01-07
FR2314583B1 FR2314583B1 (xx) 1982-09-17

Family

ID=24343323

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7617582A Granted FR2314583A1 (fr) 1975-06-11 1976-06-10 Dispositif a circuit integre comprenant a la fois des transistors a effet de champ a porte isolee, a canal du type n et a canal du type p.

Country Status (15)

Country Link
JP (1) JPS5234677A (xx)
AU (1) AU497683B2 (xx)
BE (1) BE842774A (xx)
BR (1) BR7603615A (xx)
CA (1) CA1057413A (xx)
CH (1) CH620049A5 (xx)
DE (1) DE2625576A1 (xx)
FR (1) FR2314583A1 (xx)
GB (1) GB1526503A (xx)
HU (1) HU175524B (xx)
IN (1) IN144541B (xx)
IT (1) IT1079501B (xx)
NL (1) NL7606272A (xx)
SE (1) SE416599B (xx)
YU (1) YU139376A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387515A1 (fr) * 1977-04-11 1978-11-10 Rca Corp Procede de formation d'un contact pour un circuit integre

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1188821A (en) * 1982-09-03 1985-06-11 Patrick W. Clarke Power mosfet integrated circuit
US4860080A (en) * 1987-03-31 1989-08-22 General Electric Company Isolation for transistor devices having a pilot structure
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2129827A1 (xx) * 1971-03-15 1972-11-03 Gen Electric

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6904543A (xx) * 1969-03-25 1970-09-29
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5535869B2 (xx) * 1972-05-15 1980-09-17
JPS4921080A (xx) * 1972-06-15 1974-02-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2129827A1 (xx) * 1971-03-15 1972-11-03 Gen Electric

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV8093/72 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2387515A1 (fr) * 1977-04-11 1978-11-10 Rca Corp Procede de formation d'un contact pour un circuit integre

Also Published As

Publication number Publication date
AU1467576A (en) 1977-12-15
IN144541B (xx) 1978-05-13
CA1057413A (en) 1979-06-26
FR2314583B1 (xx) 1982-09-17
JPS5234677A (en) 1977-03-16
IT1079501B (it) 1985-05-13
BE842774A (nl) 1976-10-01
CH620049A5 (en) 1980-10-31
AU497683B2 (en) 1978-12-21
YU139376A (en) 1983-04-27
HU175524B (hu) 1980-08-28
BR7603615A (pt) 1977-02-01
DE2625576A1 (de) 1976-12-30
SE7606368L (sv) 1976-12-12
NL7606272A (nl) 1976-12-14
JPS574105B2 (xx) 1982-01-25
SE416599B (sv) 1981-01-19
GB1526503A (en) 1978-09-27

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