FR2310634A1 - Procede de formation d'une structure de porte pour dispositif mos - Google Patents

Procede de formation d'une structure de porte pour dispositif mos

Info

Publication number
FR2310634A1
FR2310634A1 FR7613357A FR7613357A FR2310634A1 FR 2310634 A1 FR2310634 A1 FR 2310634A1 FR 7613357 A FR7613357 A FR 7613357A FR 7613357 A FR7613357 A FR 7613357A FR 2310634 A1 FR2310634 A1 FR 2310634A1
Authority
FR
France
Prior art keywords
integrated circuit
gate insulator
effect transistors
field effect
automatic alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7613357A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2310634A1 publication Critical patent/FR2310634A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7613357A 1975-05-05 1976-05-05 Procede de formation d'une structure de porte pour dispositif mos Withdrawn FR2310634A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57503375A 1975-05-05 1975-05-05

Publications (1)

Publication Number Publication Date
FR2310634A1 true FR2310634A1 (fr) 1976-12-03

Family

ID=24298658

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7613357A Withdrawn FR2310634A1 (fr) 1975-05-05 1976-05-05 Procede de formation d'une structure de porte pour dispositif mos

Country Status (4)

Country Link
JP (1) JPS51142982A (fr)
DE (1) DE2615441A1 (fr)
FR (1) FR2310634A1 (fr)
NL (1) NL7604708A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382767A1 (fr) * 1977-01-26 1978-09-29 Mostek Corp Procede de fabrication de dispositif semiconducteur

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105373A (en) * 1978-12-04 1980-08-12 Mostek Corp Metal oxide semiconductor transistor and method of fabricating same
JPS55143047A (en) * 1979-04-25 1980-11-08 Nec Corp Insulating separation method for semiconductor device
JPS5961069A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 半導体装置の製造方法
JPS5976472A (ja) * 1982-10-26 1984-05-01 Toshiba Corp 半導体装置の製造方法
US4508757A (en) * 1982-12-20 1985-04-02 International Business Machines Corporation Method of manufacturing a minimum bird's beak recessed oxide isolation structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190B2 (ja) * 1972-01-27 1983-01-05 日本電気株式会社 ゼツエンゲ−トガタデンカイコウカトランジスタ
IT999786B (it) * 1973-01-15 1976-03-10 Fairchild Camera Instr Co Procedimento per la fabbricazione di transistori a semiconduttore di ossido metallico e prodotto ottenuto con il procedimento
JPS5918872B2 (ja) * 1973-12-07 1984-05-01 日本電気株式会社 絶縁ゲ−ト型電界効果半導体装置の製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382767A1 (fr) * 1977-01-26 1978-09-29 Mostek Corp Procede de fabrication de dispositif semiconducteur

Also Published As

Publication number Publication date
DE2615441A1 (de) 1976-11-18
JPS51142982A (en) 1976-12-08
NL7604708A (nl) 1976-11-09

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Legal Events

Date Code Title Description
ST Notification of lapse