ES465379A1 - Un metodo de grabado gaseoso sobre una capa de nitruro de silicio. - Google Patents

Un metodo de grabado gaseoso sobre una capa de nitruro de silicio.

Info

Publication number
ES465379A1
ES465379A1 ES465379A ES465379A ES465379A1 ES 465379 A1 ES465379 A1 ES 465379A1 ES 465379 A ES465379 A ES 465379A ES 465379 A ES465379 A ES 465379A ES 465379 A1 ES465379 A1 ES 465379A1
Authority
ES
Spain
Prior art keywords
nitride layer
silicon nitride
gas etching
selective gas
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES465379A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES465379A1 publication Critical patent/ES465379A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Un método de grabado gaseoso sobre una capa de nitruro de silicio depositada sobre un cuerpo semiconductor de siliciomediante un plasma producido por una descarga incandescente de alta frecuencia de una atmósfera gaseosa conteniendo f luorohidrocarbono y oxígenocaracterizado en que la atmósfera gaseosa está compuesta de tetrafluoruro de carbono y oxígeno y en que el proceso de grabado se realiza en dos fases.
ES465379A 1976-12-23 1977-12-23 Un metodo de grabado gaseoso sobre una capa de nitruro de silicio. Expired ES465379A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2658448A DE2658448C3 (de) 1976-12-23 1976-12-23 Verfahren zum Ätzen einer auf einem Halbleiterkörper aufgebrachten Schicht aus Siliciumnitrid in einem Gasplasma

Publications (1)

Publication Number Publication Date
ES465379A1 true ES465379A1 (es) 1978-09-16

Family

ID=5996412

Family Applications (1)

Application Number Title Priority Date Filing Date
ES465379A Expired ES465379A1 (es) 1976-12-23 1977-12-23 Un metodo de grabado gaseoso sobre una capa de nitruro de silicio.

Country Status (7)

Country Link
US (1) US4174251A (es)
JP (1) JPS5379800A (es)
DE (1) DE2658448C3 (es)
ES (1) ES465379A1 (es)
FR (1) FR2375339A1 (es)
GB (1) GB1543299A (es)
IT (1) IT1088562B (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234362A (en) * 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
JPS5595340A (en) * 1979-01-10 1980-07-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
US4255230A (en) * 1980-02-22 1981-03-10 Eaton Corporation Plasma etching process
US4349409A (en) * 1980-05-12 1982-09-14 Fujitsu Limited Method and apparatus for plasma etching
JPS5713744A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Manufacture of semiconductor device
NL8004005A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JPS5789226A (en) * 1980-11-19 1982-06-03 Ibm Method of etching silicon nitride layer
DE3045922A1 (de) * 1980-12-05 1982-07-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
JPS6010644A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 半導体装置の製造方法
US4484979A (en) * 1984-04-16 1984-11-27 At&T Bell Laboratories Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
CA1281307C (en) * 1985-04-01 1991-03-12 Allan R. Knoll Method of plasma etching a substrate with a gaseous organohalide compound
US5053104A (en) * 1985-04-01 1991-10-01 International Business Machines Corporation Method of plasma etching a substrate with a gaseous organohalide compound
US4671849A (en) * 1985-05-06 1987-06-09 International Business Machines Corporation Method for control of etch profile
US5922622A (en) * 1996-09-03 1999-07-13 Vanguard International Semiconductor Corporation Pattern formation of silicon nitride
US6060400A (en) * 1998-03-26 2000-05-09 The Research Foundation Of State University Of New York Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide
SG112804A1 (en) * 2001-05-10 2005-07-28 Inst Of Microelectronics Sloped trench etching process
US6699795B1 (en) * 2002-03-15 2004-03-02 Cypress Semiconductor Corp. Gate etch process
US7268082B2 (en) 2004-04-30 2007-09-11 International Business Machines Corporation Highly selective nitride etching employing surface mediated uniform reactive layer films
US7915175B1 (en) 2004-06-25 2011-03-29 Cypress Semiconductor Corporation Etching nitride and anti-reflective coating
JP4936709B2 (ja) * 2005-11-25 2012-05-23 東京エレクトロン株式会社 プラズマエッチング方法および半導体装置の製造方法
KR100681809B1 (ko) 2006-09-05 2007-02-12 (주) 건축사 사무소 도시건축 추락 충격 완화부를 가진 공동주택 외벽.
JP4703609B2 (ja) * 2007-06-29 2011-06-15 株式会社東芝 磁気記録媒体の製造方法
JP5691357B2 (ja) * 2010-09-30 2015-04-01 カシオ計算機株式会社 半導体デバイス形成用基板の製造方法及びドライエッチング方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795557A (en) * 1972-05-12 1974-03-05 Lfe Corp Process and material for manufacturing semiconductor devices
US4028155A (en) * 1974-02-28 1977-06-07 Lfe Corporation Process and material for manufacturing thin film integrated circuits

Also Published As

Publication number Publication date
DE2658448A1 (de) 1978-06-29
DE2658448B2 (de) 1979-01-11
FR2375339B1 (es) 1984-04-13
FR2375339A1 (fr) 1978-07-21
DE2658448C3 (de) 1979-09-20
GB1543299A (en) 1979-04-04
IT1088562B (it) 1985-06-10
JPS5379800A (en) 1978-07-14
JPS6211494B2 (es) 1987-03-12
US4174251A (en) 1979-11-13

Similar Documents

Publication Publication Date Title
ES465379A1 (es) Un metodo de grabado gaseoso sobre una capa de nitruro de silicio.
CA1029475A (en) Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the same
JPS5324277A (en) Semiconductor devic e and its production
JPS52139376A (en) Production of semiconductor device
JPS57211787A (en) Amorphous silicon diode
JPS5458381A (en) Manufacture for semiconductor device
JPS57148371A (en) Manufacture of mesa type semiconductor device
JPS5656648A (en) Manufacture of semiconductor device
JPS6428962A (en) Semiconductor device and manufacture thereof
JPS52129276A (en) Production of semiconductor device
JPS51113461A (en) A method for manufacturing semiconductor devices
JPS5643744A (en) Manufacture of semiconductor device
JPS5325350A (en) Dicing method of semiconductor substrates
JPS5368165A (en) Production of semiconductor device
JPS57102010A (en) Manufacture of semiconductor device
JPS5420675A (en) Production of semiconductor device
JPS5251872A (en) Production of semiconductor device
JPS5610923A (en) Preparation of semiconductor device
JPS55153369A (en) Manufacturing method of semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS5228873A (en) Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture
JPS56152236A (en) Method of forming contacting hole
JPS5691476A (en) Semiconductor
JPS5279871A (en) Production of impurity diffused layer
JPS6459955A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19991119