FR2275886A1 - Film resistant mince - Google Patents

Film resistant mince

Info

Publication number
FR2275886A1
FR2275886A1 FR7517458A FR7517458A FR2275886A1 FR 2275886 A1 FR2275886 A1 FR 2275886A1 FR 7517458 A FR7517458 A FR 7517458A FR 7517458 A FR7517458 A FR 7517458A FR 2275886 A1 FR2275886 A1 FR 2275886A1
Authority
FR
France
Prior art keywords
resistant film
thin resistant
thin
film
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7517458A
Other languages
English (en)
Other versions
FR2275886B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2275886A1 publication Critical patent/FR2275886A1/fr
Application granted granted Critical
Publication of FR2275886B1 publication Critical patent/FR2275886B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Silicon Compounds (AREA)
  • Non-Adjustable Resistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Conductive Materials (AREA)
FR7517458A 1974-06-18 1975-06-04 Film resistant mince Granted FR2275886A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6957674A JPS5513426B2 (fr) 1974-06-18 1974-06-18

Publications (2)

Publication Number Publication Date
FR2275886A1 true FR2275886A1 (fr) 1976-01-16
FR2275886B1 FR2275886B1 (fr) 1982-07-16

Family

ID=13406744

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7517458A Granted FR2275886A1 (fr) 1974-06-18 1975-06-04 Film resistant mince

Country Status (8)

Country Link
US (1) US4001762A (fr)
JP (1) JPS5513426B2 (fr)
CA (1) CA1009326A (fr)
DE (1) DE2526429C2 (fr)
FR (1) FR2275886A1 (fr)
GB (1) GB1488728A (fr)
IT (1) IT1039070B (fr)
NL (1) NL182849C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0122659A2 (fr) * 1983-04-06 1984-10-24 Koninklijke Philips Electronics N.V. Procédé pour la fabrication d'une couche à haute résistance ayant un coefficient de résistance bas et dispositif semi-conducteur ayant une telle couche à haute résistance

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
FR2335951A1 (fr) * 1975-12-19 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation
GB1561983A (en) * 1976-04-07 1980-03-05 Lucas Industries Ltd Polw claw member for a dynamo electric machine rotor
US4133000A (en) * 1976-12-13 1979-01-02 General Motors Corporation Integrated circuit process compatible surge protection resistor
US4167804A (en) * 1976-12-13 1979-09-18 General Motors Corporation Integrated circuit process compatible surge protection resistor
IT1094517B (it) * 1978-04-28 1985-08-02 Componenti Elettronici Sgs Ate Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato
CA1136773A (fr) * 1978-08-14 1982-11-30 Norikazu Ohuchi Dispositif semiconducteur
US4251876A (en) * 1978-11-03 1981-02-17 Mostek Corporation Extremely low current load device for integrated circuit
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
JPS5749193U (fr) * 1980-09-04 1982-03-19
IT8149780A0 (it) * 1980-12-01 1981-11-27 Hughes Aircraft Co Circuito d'ingresso a modulazionedi porta con resistori al silicio policristallino
US4467312A (en) * 1980-12-23 1984-08-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor resistor device
DE3204054A1 (de) * 1981-02-23 1982-09-09 Intel Corp., Santa Clara, Calif. Widerstand in integrierter schaltungstechnik und verfahren zu dessen herstellung
US4706107A (en) * 1981-06-04 1987-11-10 Nippon Electric Co., Ltd. IC memory cells with reduced alpha particle influence
NL8203323A (nl) * 1982-08-25 1984-03-16 Philips Nv Geintegreerde weerstand.
JPS59138362A (ja) * 1983-01-28 1984-08-08 Nec Corp 半導体装置
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JPS61134055A (ja) * 1984-12-04 1986-06-21 Sony Corp 半導体装置の製造方法
JPH0617957B2 (ja) * 1985-05-15 1994-03-09 セイコー電子工業株式会社 液晶表示装置
GB2182488A (en) * 1985-11-02 1987-05-13 Stc Plc Integrated circuit resistors
US4755480A (en) * 1986-02-03 1988-07-05 Intel Corporation Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition
GB2186116B (en) * 1986-02-03 1989-11-22 Intel Corp Plasma enhanced chemical vapor deposited vertical resistor
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
JP2816549B2 (ja) * 1986-10-22 1998-10-27 セイコーインスツルメンツ株式会社 電気光学装置
US4690728A (en) * 1986-10-23 1987-09-01 Intel Corporation Pattern delineation of vertical load resistor
US4812419A (en) * 1987-04-30 1989-03-14 Hewlett-Packard Company Via connection with thin resistivity layer
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
JPH01143252A (ja) * 1987-11-27 1989-06-05 Nec Corp 半導体装置
US5214497A (en) * 1988-05-25 1993-05-25 Hitachi, Ltd. Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device
US5570119A (en) * 1988-07-26 1996-10-29 Canon Kabushiki Kaisha Multilayer device having integral functional element for use with an ink jet recording apparatus, and recording apparatus
US4992773A (en) * 1988-10-07 1991-02-12 Mos Electronics Corporation Resistor with side wall contact
US5457062A (en) * 1989-06-30 1995-10-10 Texas Instruments Incorporated Method for forming gigaohm load for BiCMOS process
US5045870A (en) * 1990-04-02 1991-09-03 International Business Machines Corporation Thermal ink drop on demand devices on a single chip with vertical integration of driver device
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
KR940008883B1 (ko) * 1992-04-08 1994-09-28 삼성전자 주식회사 박막저항의 제조방법
US5349325A (en) * 1993-05-18 1994-09-20 Integrated Device Technology, Inc. Multi-layer low modulation polycrystalline semiconductor resistor
US6221760B1 (en) * 1997-10-20 2001-04-24 Nec Corporation Semiconductor device having a silicide structure
JPH10242394A (ja) * 1997-02-27 1998-09-11 Matsushita Electron Corp 半導体装置の製造方法
US7357898B2 (en) * 2003-07-31 2008-04-15 Agency For Science, Technology And Research Microfluidics packages and methods of using same
JP5225549B2 (ja) * 2006-03-15 2013-07-03 日本碍子株式会社 半導体素子
EP3282265B3 (fr) * 2016-08-10 2024-03-27 X-FAB Semiconductor Foundries GmbH Dispositifs et procédés de circuits à semi-conducteurs

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE593931C (de) * 1931-11-24 1934-03-07 Siemens & Halske Akt Ges Verfahren zur Herstellung eines elektrischen Widerstandes mit einer metallischen Siliciumschicht auf isolierendem Traeger
DE618803C (de) * 1933-10-18 1935-09-17 Patra Patent Treuhand Verfahren zur Herstellung von Widerstandskoerpern ohne merkbaren Temperaturkoeffizienten
US3463715A (en) * 1966-07-07 1969-08-26 Trw Inc Method of cathodically sputtering a layer of silicon having a reduced resistivity
US3540871A (en) * 1967-12-15 1970-11-17 Texas Instruments Inc Method for maintaining the uniformity of vapor grown polycrystalline silicon
US3619739A (en) * 1969-01-16 1971-11-09 Signetics Corp Bulk resistor and integrated circuit using the same
US3629667A (en) * 1969-03-14 1971-12-21 Ibm Semiconductor resistor with uniforms current distribution at its contact surface
US3721584A (en) * 1970-04-13 1973-03-20 A Diem Silicon coated substrates and objects fabricated therefrom
US3745647A (en) * 1970-10-07 1973-07-17 Rca Corp Fabrication of semiconductor devices
US3694700A (en) * 1971-02-19 1972-09-26 Nasa Integrated circuit including field effect transistor and cerment resistor
US3806361A (en) * 1972-01-24 1974-04-23 Motorola Inc Method of making electrical contacts for and passivating a semiconductor device
NL7208026A (fr) * 1972-06-13 1973-12-17

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0122659A2 (fr) * 1983-04-06 1984-10-24 Koninklijke Philips Electronics N.V. Procédé pour la fabrication d'une couche à haute résistance ayant un coefficient de résistance bas et dispositif semi-conducteur ayant une telle couche à haute résistance
EP0122659A3 (fr) * 1983-04-06 1987-01-28 Koninklijke Philips Electronics N.V. Procédé pour la fabrication d'une couche à haute résistance ayant un coefficient de résistance bas et dispositif semi-conducteur ayant une telle couche à haute résistance

Also Published As

Publication number Publication date
NL7507280A (nl) 1975-12-22
IT1039070B (it) 1979-12-10
DE2526429A1 (de) 1976-01-08
FR2275886B1 (fr) 1982-07-16
JPS5513426B2 (fr) 1980-04-09
DE2526429C2 (de) 1982-12-23
JPS51281A (fr) 1976-01-05
NL182849C (nl) 1988-05-16
US4001762A (en) 1977-01-04
NL182849B (nl) 1987-12-16
GB1488728A (en) 1977-10-12
CA1009326A (en) 1977-04-26

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