NL7208026A - - Google Patents

Info

Publication number
NL7208026A
NL7208026A NL7208026A NL7208026A NL7208026A NL 7208026 A NL7208026 A NL 7208026A NL 7208026 A NL7208026 A NL 7208026A NL 7208026 A NL7208026 A NL 7208026A NL 7208026 A NL7208026 A NL 7208026A
Authority
NL
Netherlands
Application number
NL7208026A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7208026A priority Critical patent/NL7208026A/xx
Priority to DE2326751A priority patent/DE2326751C3/de
Priority to FR7320710A priority patent/FR2188314B1/fr
Priority to AU56685/73A priority patent/AU476893B2/en
Priority to US367957A priority patent/US3893151A/en
Priority to GB2739473A priority patent/GB1425985A/en
Priority to GB3377874A priority patent/GB1425986A/en
Priority to CH839773A priority patent/CH558086A/xx
Priority to CA173,646A priority patent/CA1022678A/fr
Priority to SE7308253A priority patent/SE387460B/xx
Priority to IT1030/73A priority patent/IT984680B/it
Priority to JP6595773A priority patent/JPS5331583B2/ja
Publication of NL7208026A publication Critical patent/NL7208026A/xx
Priority to JP2555078A priority patent/JPS53127277A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
NL7208026A 1972-06-13 1972-06-13 NL7208026A (fr)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NL7208026A NL7208026A (fr) 1972-06-13 1972-06-13
DE2326751A DE2326751C3 (de) 1972-06-13 1973-05-25 Halbleiterbauelement zum Speichern und Verfahren zum Betrieb
FR7320710A FR2188314B1 (fr) 1972-06-13 1973-06-07
AU56685/73A AU476893B2 (en) 1972-06-13 1973-06-07 Semiconductor memory device and field-effect transistor suitable for use in the device
US367957A US3893151A (en) 1972-06-13 1973-06-07 Semiconductor memory device and field effect transistor suitable for use in the device
GB2739473A GB1425985A (en) 1972-06-13 1973-06-08 Arrangements including semiconductor memory devices
GB3377874A GB1425986A (en) 1972-06-13 1973-06-08 Semiconductor devices comprising insulated-gate- field-effect transistors
CH839773A CH558086A (de) 1972-06-13 1973-06-08 Halbleiter-speichervorrichtung und verfahren zu ihrem betrieb.
CA173,646A CA1022678A (fr) 1972-06-13 1973-06-08 Memoire a semiconducteur fonctionnant avec un transistor a effet de champ
SE7308253A SE387460B (sv) 1972-06-13 1973-06-12 Lagringsanordning av halvledartyp
IT1030/73A IT984680B (it) 1972-06-13 1973-06-12 Dispositivo di memoria a semiconduttore e transistore ad effet to di campo atto all impiego in tale dispositivo
JP6595773A JPS5331583B2 (fr) 1972-06-13 1973-06-13
JP2555078A JPS53127277A (en) 1972-06-13 1978-03-08 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7208026A NL7208026A (fr) 1972-06-13 1972-06-13

Publications (1)

Publication Number Publication Date
NL7208026A true NL7208026A (fr) 1973-12-17

Family

ID=19816265

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7208026A NL7208026A (fr) 1972-06-13 1972-06-13

Country Status (11)

Country Link
US (1) US3893151A (fr)
JP (2) JPS5331583B2 (fr)
AU (1) AU476893B2 (fr)
CA (1) CA1022678A (fr)
CH (1) CH558086A (fr)
DE (1) DE2326751C3 (fr)
FR (1) FR2188314B1 (fr)
GB (2) GB1425985A (fr)
IT (1) IT984680B (fr)
NL (1) NL7208026A (fr)
SE (1) SE387460B (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
NL7308240A (fr) * 1973-06-14 1974-12-17
US4123771A (en) * 1973-09-21 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Nonvolatile semiconductor memory
JPS5513426B2 (fr) * 1974-06-18 1980-04-09
DE2513207C2 (de) * 1974-09-20 1982-07-01 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2525062C2 (de) 1975-06-05 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Matrixanordnung aus n-Kanal-Speicher-FET
DE2638730C2 (de) * 1974-09-20 1982-10-28 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET
DE2812049C2 (de) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
US3987474A (en) * 1975-01-23 1976-10-19 Massachusetts Institute Of Technology Non-volatile charge storage elements and an information storage apparatus employing such elements
DE2560220C2 (de) * 1975-03-25 1982-11-25 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
US4019199A (en) * 1975-12-22 1977-04-19 International Business Machines Corporation Highly sensitive charge-coupled photodetector including an electrically isolated reversed biased diffusion region for eliminating an inversion layer
US4075653A (en) * 1976-11-19 1978-02-21 International Business Machines Corporation Method for injecting charge in field effect devices
NL7700880A (nl) * 1976-12-17 1978-08-01 Philips Nv Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren.
US4282540A (en) * 1977-12-23 1981-08-04 International Business Machines Corporation FET Containing stacked gates
US4185319A (en) * 1978-10-04 1980-01-22 Rca Corp. Non-volatile memory device
GB8713388D0 (en) * 1987-06-08 1987-07-15 Philips Electronic Associated Semiconductor device
JPH01224634A (ja) * 1988-03-04 1989-09-07 Kanai Shiyarin Kogyo Kk 空気洩れ検査方法並びにその装置
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
US5216269A (en) * 1989-03-31 1993-06-01 U.S. Philips Corp. Electrically-programmable semiconductor memories with buried injector region
DE69019872T2 (de) * 1989-03-31 1996-02-22 Philips Electronics Nv Elektrisch programmierbare Halbleiterspeicher.
US5990512A (en) * 1995-03-07 1999-11-23 California Institute Of Technology Hole impact ionization mechanism of hot electron injection and four-terminal ρFET semiconductor structure for long-term learning
US5875126A (en) * 1995-09-29 1999-02-23 California Institute Of Technology Autozeroing floating gate amplifier
US6144581A (en) * 1996-07-24 2000-11-07 California Institute Of Technology pMOS EEPROM non-volatile data storage
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5703808A (en) * 1996-02-21 1997-12-30 Motorola, Inc. Non-volatile memory cell and method of programming
US5777361A (en) * 1996-06-03 1998-07-07 Motorola, Inc. Single gate nonvolatile memory cell and method for accessing the same
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
US6153463A (en) * 1999-07-09 2000-11-28 Macronix International Co., Ltd. Triple plate capacitor and method for manufacturing
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
US6958646B1 (en) 2002-05-28 2005-10-25 Impinj, Inc. Autozeroing floating-gate amplifier
US7372098B2 (en) * 2005-06-16 2008-05-13 Micron Technology, Inc. Low power flash memory devices
CN101236970B (zh) * 2007-02-01 2011-08-17 旺宏电子股份有限公司 半导体元件与记忆体及其操作方法
US7652923B2 (en) * 2007-02-02 2010-01-26 Macronix International Co., Ltd. Semiconductor device and memory and method of operating thereof
US7883931B2 (en) * 2008-02-06 2011-02-08 Micron Technology, Inc. Methods of forming memory cells, and methods of forming programmed memory cells

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577210A (en) * 1969-02-17 1971-05-04 Hughes Aircraft Co Solid-state storage device
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
JPS5223531B2 (fr) * 1971-10-12 1977-06-24

Also Published As

Publication number Publication date
IT984680B (it) 1974-11-20
US3893151A (en) 1975-07-01
AU476893B2 (en) 1976-10-07
GB1425985A (en) 1976-02-25
FR2188314A1 (fr) 1974-01-18
CH558086A (de) 1975-01-15
DE2326751C3 (de) 1979-12-13
AU5668573A (en) 1974-12-12
SE387460B (sv) 1976-09-06
CA1022678A (fr) 1977-12-13
FR2188314B1 (fr) 1978-02-10
GB1425986A (en) 1976-02-25
JPS53127277A (en) 1978-11-07
DE2326751B2 (de) 1979-04-12
DE2326751A1 (de) 1974-01-03
JPS5514548B2 (fr) 1980-04-17
JPS4963352A (fr) 1974-06-19
JPS5331583B2 (fr) 1978-09-04

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