NL7208026A - - Google Patents
Info
- Publication number
- NL7208026A NL7208026A NL7208026A NL7208026A NL7208026A NL 7208026 A NL7208026 A NL 7208026A NL 7208026 A NL7208026 A NL 7208026A NL 7208026 A NL7208026 A NL 7208026A NL 7208026 A NL7208026 A NL 7208026A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7208026A NL7208026A (xx) | 1972-06-13 | 1972-06-13 | |
| DE2326751A DE2326751C3 (de) | 1972-06-13 | 1973-05-25 | Halbleiterbauelement zum Speichern und Verfahren zum Betrieb |
| US367957A US3893151A (en) | 1972-06-13 | 1973-06-07 | Semiconductor memory device and field effect transistor suitable for use in the device |
| FR7320710A FR2188314B1 (xx) | 1972-06-13 | 1973-06-07 | |
| AU56685/73A AU476893B2 (en) | 1972-06-13 | 1973-06-07 | Semiconductor memory device and field-effect transistor suitable for use in the device |
| GB2739473A GB1425985A (en) | 1972-06-13 | 1973-06-08 | Arrangements including semiconductor memory devices |
| GB3377874A GB1425986A (en) | 1972-06-13 | 1973-06-08 | Semiconductor devices comprising insulated-gate- field-effect transistors |
| CA173,646A CA1022678A (en) | 1972-06-13 | 1973-06-08 | Semiconductor memory device and field-effect transistor suitable for use in the device |
| CH839773A CH558086A (de) | 1972-06-13 | 1973-06-08 | Halbleiter-speichervorrichtung und verfahren zu ihrem betrieb. |
| SE7308253A SE387460B (sv) | 1972-06-13 | 1973-06-12 | Lagringsanordning av halvledartyp |
| IT1030/73A IT984680B (it) | 1972-06-13 | 1973-06-12 | Dispositivo di memoria a semiconduttore e transistore ad effet to di campo atto all impiego in tale dispositivo |
| JP6595773A JPS5331583B2 (xx) | 1972-06-13 | 1973-06-13 | |
| JP2555078A JPS53127277A (en) | 1972-06-13 | 1978-03-08 | Semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7208026A NL7208026A (xx) | 1972-06-13 | 1972-06-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7208026A true NL7208026A (xx) | 1973-12-17 |
Family
ID=19816265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7208026A NL7208026A (xx) | 1972-06-13 | 1972-06-13 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3893151A (xx) |
| JP (2) | JPS5331583B2 (xx) |
| AU (1) | AU476893B2 (xx) |
| CA (1) | CA1022678A (xx) |
| CH (1) | CH558086A (xx) |
| DE (1) | DE2326751C3 (xx) |
| FR (1) | FR2188314B1 (xx) |
| GB (2) | GB1425986A (xx) |
| IT (1) | IT984680B (xx) |
| NL (1) | NL7208026A (xx) |
| SE (1) | SE387460B (xx) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
| NL7308240A (xx) * | 1973-06-14 | 1974-12-17 | ||
| US4123771A (en) * | 1973-09-21 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile semiconductor memory |
| JPS5513426B2 (xx) * | 1974-06-18 | 1980-04-09 | ||
| DE2812049C2 (de) * | 1974-09-20 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2638730C2 (de) * | 1974-09-20 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET |
| DE2513207C2 (de) * | 1974-09-20 | 1982-07-01 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2525062C2 (de) | 1975-06-05 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Matrixanordnung aus n-Kanal-Speicher-FET |
| US3987474A (en) * | 1975-01-23 | 1976-10-19 | Massachusetts Institute Of Technology | Non-volatile charge storage elements and an information storage apparatus employing such elements |
| DE2560220C2 (de) * | 1975-03-25 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| US4019199A (en) * | 1975-12-22 | 1977-04-19 | International Business Machines Corporation | Highly sensitive charge-coupled photodetector including an electrically isolated reversed biased diffusion region for eliminating an inversion layer |
| US4075653A (en) * | 1976-11-19 | 1978-02-21 | International Business Machines Corporation | Method for injecting charge in field effect devices |
| NL7700880A (nl) * | 1976-12-17 | 1978-08-01 | Philips Nv | Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren. |
| US4282540A (en) * | 1977-12-23 | 1981-08-04 | International Business Machines Corporation | FET Containing stacked gates |
| US4185319A (en) * | 1978-10-04 | 1980-01-22 | Rca Corp. | Non-volatile memory device |
| GB8713388D0 (en) * | 1987-06-08 | 1987-07-15 | Philips Electronic Associated | Semiconductor device |
| JPH01224634A (ja) * | 1988-03-04 | 1989-09-07 | Kanai Shiyarin Kogyo Kk | 空気洩れ検査方法並びにその装置 |
| KR910007434B1 (ko) * | 1988-12-15 | 1991-09-26 | 삼성전자 주식회사 | 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법 |
| ATE123590T1 (de) * | 1989-03-31 | 1995-06-15 | Philips Electronics Nv | Elektrisch programmierbare halbleiterspeicher. |
| US5216269A (en) * | 1989-03-31 | 1993-06-01 | U.S. Philips Corp. | Electrically-programmable semiconductor memories with buried injector region |
| US6144581A (en) * | 1996-07-24 | 2000-11-07 | California Institute Of Technology | pMOS EEPROM non-volatile data storage |
| US5875126A (en) * | 1995-09-29 | 1999-02-23 | California Institute Of Technology | Autozeroing floating gate amplifier |
| US6965142B2 (en) * | 1995-03-07 | 2005-11-15 | Impinj, Inc. | Floating-gate semiconductor structures |
| US5990512A (en) * | 1995-03-07 | 1999-11-23 | California Institute Of Technology | Hole impact ionization mechanism of hot electron injection and four-terminal ρFET semiconductor structure for long-term learning |
| US5703808A (en) * | 1996-02-21 | 1997-12-30 | Motorola, Inc. | Non-volatile memory cell and method of programming |
| US5777361A (en) * | 1996-06-03 | 1998-07-07 | Motorola, Inc. | Single gate nonvolatile memory cell and method for accessing the same |
| US5867425A (en) * | 1997-04-11 | 1999-02-02 | Wong; Ting-Wah | Nonvolatile memory capable of using substrate hot electron injection |
| US5896315A (en) * | 1997-04-11 | 1999-04-20 | Programmable Silicon Solutions | Nonvolatile memory |
| US6153463A (en) * | 1999-07-09 | 2000-11-28 | Macronix International Co., Ltd. | Triple plate capacitor and method for manufacturing |
| US6664909B1 (en) | 2001-08-13 | 2003-12-16 | Impinj, Inc. | Method and apparatus for trimming high-resolution digital-to-analog converter |
| US6958646B1 (en) | 2002-05-28 | 2005-10-25 | Impinj, Inc. | Autozeroing floating-gate amplifier |
| US7372098B2 (en) * | 2005-06-16 | 2008-05-13 | Micron Technology, Inc. | Low power flash memory devices |
| CN101236970B (zh) * | 2007-02-01 | 2011-08-17 | 旺宏电子股份有限公司 | 半导体元件与记忆体及其操作方法 |
| US7652923B2 (en) * | 2007-02-02 | 2010-01-26 | Macronix International Co., Ltd. | Semiconductor device and memory and method of operating thereof |
| US7883931B2 (en) * | 2008-02-06 | 2011-02-08 | Micron Technology, Inc. | Methods of forming memory cells, and methods of forming programmed memory cells |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577210A (en) * | 1969-02-17 | 1971-05-04 | Hughes Aircraft Co | Solid-state storage device |
| US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
| US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
| US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
| JPS5223531B2 (xx) * | 1971-10-12 | 1977-06-24 |
-
1972
- 1972-06-13 NL NL7208026A patent/NL7208026A/xx unknown
-
1973
- 1973-05-25 DE DE2326751A patent/DE2326751C3/de not_active Expired
- 1973-06-07 US US367957A patent/US3893151A/en not_active Expired - Lifetime
- 1973-06-07 AU AU56685/73A patent/AU476893B2/en not_active Expired
- 1973-06-07 FR FR7320710A patent/FR2188314B1/fr not_active Expired
- 1973-06-08 GB GB3377874A patent/GB1425986A/en not_active Expired
- 1973-06-08 CA CA173,646A patent/CA1022678A/en not_active Expired
- 1973-06-08 GB GB2739473A patent/GB1425985A/en not_active Expired
- 1973-06-08 CH CH839773A patent/CH558086A/xx not_active IP Right Cessation
- 1973-06-12 SE SE7308253A patent/SE387460B/xx unknown
- 1973-06-12 IT IT1030/73A patent/IT984680B/it active
- 1973-06-13 JP JP6595773A patent/JPS5331583B2/ja not_active Expired
-
1978
- 1978-03-08 JP JP2555078A patent/JPS53127277A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2326751C3 (de) | 1979-12-13 |
| AU476893B2 (en) | 1976-10-07 |
| FR2188314A1 (xx) | 1974-01-18 |
| CA1022678A (en) | 1977-12-13 |
| JPS5514548B2 (xx) | 1980-04-17 |
| GB1425986A (en) | 1976-02-25 |
| IT984680B (it) | 1974-11-20 |
| DE2326751A1 (de) | 1974-01-03 |
| US3893151A (en) | 1975-07-01 |
| FR2188314B1 (xx) | 1978-02-10 |
| DE2326751B2 (de) | 1979-04-12 |
| CH558086A (de) | 1975-01-15 |
| JPS53127277A (en) | 1978-11-07 |
| GB1425985A (en) | 1976-02-25 |
| JPS4963352A (xx) | 1974-06-19 |
| JPS5331583B2 (xx) | 1978-09-04 |
| SE387460B (sv) | 1976-09-06 |
| AU5668573A (en) | 1974-12-12 |