NL7308240A - - Google Patents

Info

Publication number
NL7308240A
NL7308240A NL7308240A NL7308240A NL7308240A NL 7308240 A NL7308240 A NL 7308240A NL 7308240 A NL7308240 A NL 7308240A NL 7308240 A NL7308240 A NL 7308240A NL 7308240 A NL7308240 A NL 7308240A
Authority
NL
Netherlands
Application number
NL7308240A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7308240A priority Critical patent/NL7308240A/xx
Priority to US05/474,694 priority patent/US3964083A/en
Priority to CA201,513A priority patent/CA1015433A/en
Priority to DE19742427256 priority patent/DE2427256A1/de
Priority to GB8768/77A priority patent/GB1480412A/en
Priority to GB25834/74A priority patent/GB1480411A/en
Priority to IT23886/74A priority patent/IT1014982B/it
Priority to JP49066138A priority patent/JPS524438B2/ja
Priority to FR7420561A priority patent/FR2233717B1/fr
Publication of NL7308240A publication Critical patent/NL7308240A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
NL7308240A 1973-06-14 1973-06-14 NL7308240A (xx)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL7308240A NL7308240A (xx) 1973-06-14 1973-06-14
US05/474,694 US3964083A (en) 1973-06-14 1974-05-30 Punchthrough resetting jfet image sensor
CA201,513A CA1015433A (en) 1973-06-14 1974-06-03 Charge storage device, using punch-through in junction field effect transistors
DE19742427256 DE2427256A1 (de) 1973-06-14 1974-06-06 Halbleiteranordnung
GB8768/77A GB1480412A (en) 1973-06-14 1974-06-11 Arrangements for operating a semiconductor device in a charge storage mode
GB25834/74A GB1480411A (en) 1973-06-14 1974-06-11 Arrangements for converting a radiation pattern into electric signals
IT23886/74A IT1014982B (it) 1973-06-14 1974-06-11 Dispositivo semiconduttore
JP49066138A JPS524438B2 (xx) 1973-06-14 1974-06-12
FR7420561A FR2233717B1 (xx) 1973-06-14 1974-06-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7308240A NL7308240A (xx) 1973-06-14 1973-06-14

Publications (1)

Publication Number Publication Date
NL7308240A true NL7308240A (xx) 1974-12-17

Family

ID=19819075

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7308240A NL7308240A (xx) 1973-06-14 1973-06-14

Country Status (8)

Country Link
US (1) US3964083A (xx)
JP (1) JPS524438B2 (xx)
CA (1) CA1015433A (xx)
DE (1) DE2427256A1 (xx)
FR (1) FR2233717B1 (xx)
GB (2) GB1480412A (xx)
IT (1) IT1014982B (xx)
NL (1) NL7308240A (xx)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988619A (en) * 1974-12-27 1976-10-26 International Business Machines Corporation Random access solid-state image sensor with non-destructive read-out
US4025943A (en) * 1976-03-22 1977-05-24 Canadian Patents And Development Limited Photogeneration channel in front illuminated solid state silicon imaging devices
JPS5466080A (en) * 1977-11-05 1979-05-28 Nippon Gakki Seizo Kk Semiconductor device
US4176369A (en) * 1977-12-05 1979-11-27 Rockwell International Corporation Image sensor having improved moving target discernment capabilities
JPS6057714B2 (ja) * 1978-01-27 1985-12-16 株式会社日立製作所 光半導体装置
US4238760A (en) * 1978-10-06 1980-12-09 Recognition Equipment Incorporated Multi-spectrum photodiode devices
US4249190A (en) * 1979-07-05 1981-02-03 Bell Telephone Laboratories, Incorporated Floating gate vertical FET
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS58220574A (ja) * 1982-06-17 1983-12-22 Olympus Optical Co Ltd 固体撮像装置
DE3750300T2 (de) * 1986-02-04 1994-12-15 Canon Kk Photoelektrisches Umwandlungselement und Verfahren zu seiner Herstellung.
JPH02146876A (ja) * 1988-11-29 1990-06-06 Toshiba Corp 光センサの駆動方法
JPH05328225A (ja) * 1992-05-15 1993-12-10 Sony Corp 増幅型固体撮像装置
US5486711A (en) * 1993-06-25 1996-01-23 Nikon Corporation Solid-state image sensor with overlapping split gate electrodes
CA2325886C (en) * 1998-04-09 2009-07-21 California Institute Of Technology Electronic techniques for analyte detection
US20080273409A1 (en) * 2007-05-01 2008-11-06 Thummalapally Damodar R Junction field effect dynamic random access memory cell and applications therefor
US7729149B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
US7727821B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3453507A (en) * 1967-04-04 1969-07-01 Honeywell Inc Photo-detector
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
NL7208026A (xx) * 1972-06-13 1973-12-17
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
DE2345686A1 (de) * 1972-09-22 1974-04-04 Philips Nv Bildwiedergabe- und/oder -umwandlungsvorrichtung

Also Published As

Publication number Publication date
FR2233717B1 (xx) 1979-08-24
GB1480411A (en) 1977-07-20
JPS524438B2 (xx) 1977-02-03
JPS5036088A (xx) 1975-04-04
DE2427256A1 (de) 1975-01-09
GB1480412A (en) 1977-07-20
US3964083A (en) 1976-06-15
CA1015433A (en) 1977-08-09
FR2233717A1 (xx) 1975-01-10
IT1014982B (it) 1977-04-30

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Legal Events

Date Code Title Description
BC A request for examination has been filed
BV The patent application has lapsed