FR2260186A1 - Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique - Google Patents

Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique

Info

Publication number
FR2260186A1
FR2260186A1 FR7403569A FR7403569A FR2260186A1 FR 2260186 A1 FR2260186 A1 FR 2260186A1 FR 7403569 A FR7403569 A FR 7403569A FR 7403569 A FR7403569 A FR 7403569A FR 2260186 A1 FR2260186 A1 FR 2260186A1
Authority
FR
France
Prior art keywords
windows
zones
zone
different characteristics
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7403569A
Other languages
English (en)
French (fr)
Other versions
FR2260186B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7403569A priority Critical patent/FR2260186A1/fr
Publication of FR2260186A1 publication Critical patent/FR2260186A1/fr
Application granted granted Critical
Publication of FR2260186B1 publication Critical patent/FR2260186B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
FR7403569A 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique Granted FR2260186A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7403569A FR2260186A1 (en) 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7403569A FR2260186A1 (en) 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique

Publications (2)

Publication Number Publication Date
FR2260186A1 true FR2260186A1 (en) 1975-08-29
FR2260186B1 FR2260186B1 (enrdf_load_stackoverflow) 1978-11-10

Family

ID=9134404

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7403569A Granted FR2260186A1 (en) 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique

Country Status (1)

Country Link
FR (1) FR2260186A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028786A1 (de) * 1979-11-13 1981-05-20 Deutsche ITT Industries GmbH Ionenimplantationsverfahren
EP0437834A1 (en) * 1989-12-28 1991-07-24 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028786A1 (de) * 1979-11-13 1981-05-20 Deutsche ITT Industries GmbH Ionenimplantationsverfahren
EP0437834A1 (en) * 1989-12-28 1991-07-24 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit

Also Published As

Publication number Publication date
FR2260186B1 (enrdf_load_stackoverflow) 1978-11-10

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse