FR2260186B1 - - Google Patents

Info

Publication number
FR2260186B1
FR2260186B1 FR7403569A FR7403569A FR2260186B1 FR 2260186 B1 FR2260186 B1 FR 2260186B1 FR 7403569 A FR7403569 A FR 7403569A FR 7403569 A FR7403569 A FR 7403569A FR 2260186 B1 FR2260186 B1 FR 2260186B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7403569A
Other languages
French (fr)
Other versions
FR2260186A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7403569A priority Critical patent/FR2260186A1/fr
Publication of FR2260186A1 publication Critical patent/FR2260186A1/fr
Application granted granted Critical
Publication of FR2260186B1 publication Critical patent/FR2260186B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
FR7403569A 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique Granted FR2260186A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7403569A FR2260186A1 (en) 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7403569A FR2260186A1 (en) 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique

Publications (2)

Publication Number Publication Date
FR2260186A1 FR2260186A1 (en) 1975-08-29
FR2260186B1 true FR2260186B1 (enrdf_load_stackoverflow) 1978-11-10

Family

ID=9134404

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7403569A Granted FR2260186A1 (en) 1974-02-04 1974-02-04 Semiconductor device mfr. with two or more zones - of different characteristics using successive masking and ion implantation technique

Country Status (1)

Country Link
FR (1) FR2260186A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945854A1 (de) * 1979-11-13 1981-05-21 Deutsche Itt Industries Gmbh, 7800 Freiburg Ionenimplantationsverfahren
EP0437834B1 (en) * 1989-12-28 1996-03-13 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit

Also Published As

Publication number Publication date
FR2260186A1 (en) 1975-08-29

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse