FR2231111A1 - Bipolar transistor for large scale integration - using same window with added masks for triple diffusion - Google Patents
Bipolar transistor for large scale integration - using same window with added masks for triple diffusionInfo
- Publication number
- FR2231111A1 FR2231111A1 FR7418075A FR7418075A FR2231111A1 FR 2231111 A1 FR2231111 A1 FR 2231111A1 FR 7418075 A FR7418075 A FR 7418075A FR 7418075 A FR7418075 A FR 7418075A FR 2231111 A1 FR2231111 A1 FR 2231111A1
- Authority
- FR
- France
- Prior art keywords
- bipolar transistor
- window
- diffusion
- large scale
- scale integration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title abstract 3
- 230000010354 integration Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/10—ROM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36414873A | 1973-05-25 | 1973-05-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2231111A1 true FR2231111A1 (en) | 1974-12-20 |
| FR2231111B1 FR2231111B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-03-31 |
Family
ID=23433234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7418075A Granted FR2231111A1 (en) | 1973-05-25 | 1974-05-24 | Bipolar transistor for large scale integration - using same window with added masks for triple diffusion |
Country Status (5)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5267979A (en) * | 1975-12-04 | 1977-06-06 | Mitsubishi Electric Corp | Manufacture of semiconductor |
| JPS5269276A (en) * | 1975-12-05 | 1977-06-08 | Mitsubishi Electric Corp | Production of semiconductor device |
| JPS52127775A (en) * | 1976-04-19 | 1977-10-26 | Fujitsu Ltd | Semiconductor integrated circuit and its preparation |
| JPS54112944A (en) * | 1978-02-24 | 1979-09-04 | Oopatsuku Kk | Conductive adhesives |
| JPS54158876A (en) * | 1978-06-06 | 1979-12-15 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5624970A (en) * | 1979-08-07 | 1981-03-10 | Nec Corp | Manufacture of semiconductor device |
| US6322620B1 (en) | 2000-11-16 | 2001-11-27 | National Starch And Chemical Investment Holding Corporation | Conductive ink composition |
-
1974
- 1974-02-22 CA CA193,203A patent/CA1005171A/en not_active Expired
- 1974-04-04 NL NL7404614A patent/NL7404614A/xx not_active Application Discontinuation
- 1974-04-24 DE DE2419817A patent/DE2419817A1/de not_active Withdrawn
- 1974-05-24 JP JP5799774A patent/JPS5517495B2/ja not_active Expired
- 1974-05-24 FR FR7418075A patent/FR2231111A1/fr active Granted
Non-Patent Citations (1)
| Title |
|---|
| NEANT * |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7404614A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-11-27 |
| JPS5022582A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-03-11 |
| DE2419817A1 (de) | 1974-12-05 |
| FR2231111B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-03-31 |
| JPS5517495B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-05-12 |
| CA1005171A (en) | 1977-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |