CA1005171A - Bipolar transistor construction method - Google Patents
Bipolar transistor construction methodInfo
- Publication number
- CA1005171A CA1005171A CA193,203A CA193203A CA1005171A CA 1005171 A CA1005171 A CA 1005171A CA 193203 A CA193203 A CA 193203A CA 1005171 A CA1005171 A CA 1005171A
- Authority
- CA
- Canada
- Prior art keywords
- construction method
- bipolar transistor
- transistor construction
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010276 construction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/10—ROM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36414873A | 1973-05-25 | 1973-05-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1005171A true CA1005171A (en) | 1977-02-08 |
Family
ID=23433234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA193,203A Expired CA1005171A (en) | 1973-05-25 | 1974-02-22 | Bipolar transistor construction method |
Country Status (5)
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267979A (en) * | 1975-12-04 | 1977-06-06 | Mitsubishi Electric Corp | Manufacture of semiconductor |
JPS5269276A (en) * | 1975-12-05 | 1977-06-08 | Mitsubishi Electric Corp | Production of semiconductor device |
JPS52127775A (en) * | 1976-04-19 | 1977-10-26 | Fujitsu Ltd | Semiconductor integrated circuit and its preparation |
JPS54112944A (en) * | 1978-02-24 | 1979-09-04 | Oopatsuku Kk | Conductive adhesives |
JPS54158876A (en) * | 1978-06-06 | 1979-12-15 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS5624970A (en) * | 1979-08-07 | 1981-03-10 | Nec Corp | Manufacture of semiconductor device |
US6322620B1 (en) | 2000-11-16 | 2001-11-27 | National Starch And Chemical Investment Holding Corporation | Conductive ink composition |
-
1974
- 1974-02-22 CA CA193,203A patent/CA1005171A/en not_active Expired
- 1974-04-04 NL NL7404614A patent/NL7404614A/xx not_active Application Discontinuation
- 1974-04-24 DE DE2419817A patent/DE2419817A1/de not_active Withdrawn
- 1974-05-24 JP JP5799774A patent/JPS5517495B2/ja not_active Expired
- 1974-05-24 FR FR7418075A patent/FR2231111A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
NL7404614A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-11-27 |
JPS5022582A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-03-11 |
DE2419817A1 (de) | 1974-12-05 |
FR2231111B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-03-31 |
JPS5517495B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-05-12 |
FR2231111A1 (en) | 1974-12-20 |
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