FR2196604A5 - - Google Patents

Info

Publication number
FR2196604A5
FR2196604A5 FR7329683A FR7329683A FR2196604A5 FR 2196604 A5 FR2196604 A5 FR 2196604A5 FR 7329683 A FR7329683 A FR 7329683A FR 7329683 A FR7329683 A FR 7329683A FR 2196604 A5 FR2196604 A5 FR 2196604A5
Authority
FR
France
Prior art keywords
molar
etchant
concentration
ferricyanide
leaving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7329683A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR2196604A5 publication Critical patent/FR2196604A5/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822Beam leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
FR7329683A 1972-08-15 1973-08-14 Expired FR2196604A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/280,784 US3947304A (en) 1972-08-15 1972-08-15 Etching of group III-V semiconductors

Publications (1)

Publication Number Publication Date
FR2196604A5 true FR2196604A5 (fr) 1974-03-15

Family

ID=23074635

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7329683A Expired FR2196604A5 (fr) 1972-08-15 1973-08-14

Country Status (9)

Country Link
US (1) US3947304A (fr)
JP (1) JPS525231B2 (fr)
BE (1) BE803610A (fr)
CA (1) CA988817A (fr)
FR (1) FR2196604A5 (fr)
GB (1) GB1401114A (fr)
IT (1) IT994153B (fr)
NL (1) NL176412C (fr)
SE (1) SE387198B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0083365A1 (fr) * 1981-06-24 1983-07-13 Western Electric Co PROCEDE D'ATTAQUE CHIMIQUE PREFERENTIELLE DE FACETTES DE MIROIR OPTIQUEMENT PLATES DANS DES HETEROSTRUCTURES InGaAsP/InP.

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631320A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector
JPS5631321A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector
JPS5635627A (en) * 1979-08-24 1981-04-08 Mitsubishi Electric Corp Dc leakage breaker
JPS5635626A (en) * 1979-08-24 1981-04-08 Mitsubishi Electric Corp Dc leakage breaker
US4765865A (en) * 1987-05-04 1988-08-23 Ford Motor Company Silicon etch rate enhancement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3674580A (en) * 1970-05-08 1972-07-04 Bell Telephone Labor Inc Zirconium mask for semiconductor fabricated using alkaline etchants
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0083365A1 (fr) * 1981-06-24 1983-07-13 Western Electric Co PROCEDE D'ATTAQUE CHIMIQUE PREFERENTIELLE DE FACETTES DE MIROIR OPTIQUEMENT PLATES DANS DES HETEROSTRUCTURES InGaAsP/InP.
EP0083365A4 (fr) * 1981-06-24 1986-07-30 Western Electric Co PROCEDE D'ATTAQUE CHIMIQUE PREFERENTIELLE DE FACETTES DE MIROIR OPTIQUEMENT PLATES DANS DES HETEROSTRUCTURES InGaAsP/InP.

Also Published As

Publication number Publication date
CA988817A (en) 1976-05-11
NL176412B (nl) 1984-11-01
SE387198B (sv) 1976-08-30
JPS525231B2 (fr) 1977-02-10
DE2340479A1 (de) 1974-03-14
DE2340479B2 (de) 1977-04-14
BE803610A (fr) 1973-12-03
NL176412C (nl) 1985-04-01
US3947304A (en) 1976-03-30
GB1401114A (en) 1975-07-16
JPS4960478A (fr) 1974-06-12
IT994153B (it) 1975-10-20
NL7311019A (fr) 1974-02-19

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Legal Events

Date Code Title Description
ST Notification of lapse