SE387198B - Sett att behandla en halvledaranordning med en vattenhaltig etslosning - Google Patents

Sett att behandla en halvledaranordning med en vattenhaltig etslosning

Info

Publication number
SE387198B
SE387198B SE7310652A SE7310652A SE387198B SE 387198 B SE387198 B SE 387198B SE 7310652 A SE7310652 A SE 7310652A SE 7310652 A SE7310652 A SE 7310652A SE 387198 B SE387198 B SE 387198B
Authority
SE
Sweden
Prior art keywords
molar
etchant
treat
way
semiconductor device
Prior art date
Application number
SE7310652A
Other languages
English (en)
Swedish (sv)
Inventor
L R Plauger
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE387198B publication Critical patent/SE387198B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822Beam leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
SE7310652A 1972-08-15 1973-08-02 Sett att behandla en halvledaranordning med en vattenhaltig etslosning SE387198B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/280,784 US3947304A (en) 1972-08-15 1972-08-15 Etching of group III-V semiconductors

Publications (1)

Publication Number Publication Date
SE387198B true SE387198B (sv) 1976-08-30

Family

ID=23074635

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7310652A SE387198B (sv) 1972-08-15 1973-08-02 Sett att behandla en halvledaranordning med en vattenhaltig etslosning

Country Status (9)

Country Link
US (1) US3947304A (xx)
JP (1) JPS525231B2 (xx)
BE (1) BE803610A (xx)
CA (1) CA988817A (xx)
FR (1) FR2196604A5 (xx)
GB (1) GB1401114A (xx)
IT (1) IT994153B (xx)
NL (1) NL176412C (xx)
SE (1) SE387198B (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631320A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector
JPS5631321A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector
JPS5635626A (en) * 1979-08-24 1981-04-08 Mitsubishi Electric Corp Dc leakage breaker
JPS5635627A (en) * 1979-08-24 1981-04-08 Mitsubishi Electric Corp Dc leakage breaker
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
US4765865A (en) * 1987-05-04 1988-08-23 Ford Motor Company Silicon etch rate enhancement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3674580A (en) * 1970-05-08 1972-07-04 Bell Telephone Labor Inc Zirconium mask for semiconductor fabricated using alkaline etchants
US3716429A (en) * 1970-06-18 1973-02-13 Rca Corp Method of making semiconductor devices

Also Published As

Publication number Publication date
JPS4960478A (xx) 1974-06-12
NL7311019A (xx) 1974-02-19
US3947304A (en) 1976-03-30
DE2340479B2 (de) 1977-04-14
NL176412B (nl) 1984-11-01
BE803610A (fr) 1973-12-03
CA988817A (en) 1976-05-11
FR2196604A5 (xx) 1974-03-15
DE2340479A1 (de) 1974-03-14
GB1401114A (en) 1975-07-16
JPS525231B2 (xx) 1977-02-10
NL176412C (nl) 1985-04-01
IT994153B (it) 1975-10-20

Similar Documents

Publication Publication Date Title
JPS5351970A (en) Manufacture for semiconductor substrate
SE387198B (sv) Sett att behandla en halvledaranordning med en vattenhaltig etslosning
JPS51141793A (en) Method of forming calcium sulfate whisker
JPS5248468A (en) Process for production of semiconductor device
JPS5277686A (en) Manufacture of semiconductor diaphragm
JPS5239367A (en) Method for surface treatment of semiconductor substrate
JPS5289579A (en) Desalting of aqueous solution of salt
JPS51118369A (en) Manufacturing process for simiconduator unit
JPS5248469A (en) Process for production of semiconductor device
JPS53140974A (en) Semiconductor surface treating method
JPS5220764A (en) Manufacturing system of mesa type semi-conductor unit
JPS5214371A (en) Flattening method of concave-convex surface
JPS52112281A (en) Manufacture of semiconductor
JPS5221780A (en) Semiconductor unit producing system
JPS5244793A (en) Refinement of caustic alkali containing fluorine compound
JPS5435683A (en) Manufacture of semiconductor device
JPS51145266A (en) Manufacture of semiconductor device
JPS51138166A (en) Production method of semiconductor device
JPS547874A (en) One side etching unit for semiconductor substrate
JPS5421173A (en) Manufacture for semiconductor having oxide film
JPS5375771A (en) Manufacture for semiconductor device
JPS5476071A (en) Manufacture of semiconductor device
JPS53142873A (en) Etching method of gaas group compound semiconductor crystal
JPS5436186A (en) Etching method of gaas system compound semiconductor crystal
JPS52112287A (en) Manufacture of semiconductor device