FI902648A0 - Integrerat minne med en detektorfoerstaerkare. - Google Patents

Integrerat minne med en detektorfoerstaerkare.

Info

Publication number
FI902648A0
FI902648A0 FI902648A FI902648A FI902648A0 FI 902648 A0 FI902648 A0 FI 902648A0 FI 902648 A FI902648 A FI 902648A FI 902648 A FI902648 A FI 902648A FI 902648 A0 FI902648 A0 FI 902648A0
Authority
FI
Finland
Prior art keywords
detektorfoerstaerkare
minne
med
integrated
minne med
Prior art date
Application number
FI902648A
Other languages
English (en)
Finnish (fi)
Inventor
Evert Seevinck
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of FI902648A0 publication Critical patent/FI902648A0/fi

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065Differential amplifiers of latching type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
FI902648A 1989-05-31 1990-05-28 Integrerat minne med en detektorfoerstaerkare. FI902648A0 (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8901376A NL8901376A (nl) 1989-05-31 1989-05-31 Geintegreerde geheugenschakeling met een leesversterker.

Publications (1)

Publication Number Publication Date
FI902648A0 true FI902648A0 (fi) 1990-05-28

Family

ID=19854753

Family Applications (1)

Application Number Title Priority Date Filing Date
FI902648A FI902648A0 (fi) 1989-05-31 1990-05-28 Integrerat minne med en detektorfoerstaerkare.

Country Status (11)

Country Link
EP (1) EP0400728B1 (ko)
JP (1) JP2760634B2 (ko)
KR (1) KR0155374B1 (ko)
CN (1) CN1019614B (ko)
CA (1) CA2017607C (ko)
DE (1) DE69021273T2 (ko)
ES (1) ES2077630T3 (ko)
FI (1) FI902648A0 (ko)
HK (1) HK61896A (ko)
IE (1) IE71667B1 (ko)
NL (1) NL8901376A (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2531226Y2 (ja) * 1992-11-26 1997-04-02 喜和 石渡 紙幣の収納機構
EP0747903B1 (en) * 1995-04-28 2002-04-10 STMicroelectronics S.r.l. Reading circuit for memory cells devices having a low supply voltage
JPH10133908A (ja) * 1996-10-29 1998-05-22 Mitsubishi Electric Corp マイクロプロセッサ
US6754119B2 (en) * 2001-07-26 2004-06-22 Samsung Electronics Co., Ltd. Sense amplifier for memory device
KR100408420B1 (ko) * 2002-01-09 2003-12-03 삼성전자주식회사 감지증폭기의 센싱속도를 향상시킬 수 있는 반도체메모리장치의 감지증폭기 구동회로
CN1326148C (zh) * 2002-08-14 2007-07-11 力旺电子股份有限公司 利用栅极互耦驱动的负载晶体管读取数据的快速存储器
JP4351178B2 (ja) * 2005-02-25 2009-10-28 寛治 大塚 半導体記憶装置
JP2007133987A (ja) * 2005-11-11 2007-05-31 Toshiba Corp 半導体記憶装置および半導体記憶装置の駆動方法
KR100897252B1 (ko) 2006-06-30 2009-05-14 주식회사 하이닉스반도체 반도체 메모리 장치
CN101399018B (zh) * 2007-09-26 2011-09-14 中华映管股份有限公司 信号控制电路及方法、液晶显示器及其时序控制器
GB2510828B (en) * 2013-02-13 2015-06-03 Surecore Ltd Single wordline low-power SRAM cells

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039861A (en) * 1976-02-09 1977-08-02 International Business Machines Corporation Cross-coupled charge transfer sense amplifier circuits

Also Published As

Publication number Publication date
CA2017607A1 (en) 1990-11-30
KR0155374B1 (ko) 1998-12-01
KR900019043A (ko) 1990-12-22
JP2760634B2 (ja) 1998-06-04
CN1019614B (zh) 1992-12-23
IE71667B1 (en) 1997-02-26
ES2077630T3 (es) 1995-12-01
NL8901376A (nl) 1990-12-17
HK61896A (en) 1996-04-19
CN1048282A (zh) 1991-01-02
CA2017607C (en) 2001-07-24
IE901910L (en) 1990-11-30
DE69021273T2 (de) 1996-04-04
EP0400728A1 (en) 1990-12-05
EP0400728B1 (en) 1995-08-02
DE69021273D1 (de) 1995-09-07
JPH0319198A (ja) 1991-01-28

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Legal Events

Date Code Title Description
HC Name/ company changed in application

Owner name: PHILIPS ELECTRONICS N.V.

FD Application lapsed
FD Application lapsed

Owner name: PHILIPS ELECTRONICS N.V.