NL8901376A - Geintegreerde geheugenschakeling met een leesversterker. - Google Patents

Geintegreerde geheugenschakeling met een leesversterker. Download PDF

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Publication number
NL8901376A
NL8901376A NL8901376A NL8901376A NL8901376A NL 8901376 A NL8901376 A NL 8901376A NL 8901376 A NL8901376 A NL 8901376A NL 8901376 A NL8901376 A NL 8901376A NL 8901376 A NL8901376 A NL 8901376A
Authority
NL
Netherlands
Prior art keywords
transistor
current
control transistor
branch
memory circuit
Prior art date
Application number
NL8901376A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8901376A priority Critical patent/NL8901376A/nl
Priority to EP90201314A priority patent/EP0400728B1/en
Priority to ES90201314T priority patent/ES2077630T3/es
Priority to DE69021273T priority patent/DE69021273T2/de
Priority to IE191090A priority patent/IE71667B1/en
Priority to CN90103239A priority patent/CN1019614B/zh
Priority to CA002017607A priority patent/CA2017607C/en
Priority to FI902648A priority patent/FI902648A0/fi
Priority to JP2138618A priority patent/JP2760634B2/ja
Priority to KR1019900007832A priority patent/KR0155374B1/ko
Publication of NL8901376A publication Critical patent/NL8901376A/nl
Priority to US07/707,556 priority patent/US5253137A/en
Priority to HK61896A priority patent/HK61896A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
NL8901376A 1989-05-31 1989-05-31 Geintegreerde geheugenschakeling met een leesversterker. NL8901376A (nl)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL8901376A NL8901376A (nl) 1989-05-31 1989-05-31 Geintegreerde geheugenschakeling met een leesversterker.
EP90201314A EP0400728B1 (en) 1989-05-31 1990-05-25 Integrated memory comprising a sense amplifier
ES90201314T ES2077630T3 (es) 1989-05-31 1990-05-25 Memoria integrada que contiene un amplificador de la grabacion.
DE69021273T DE69021273T2 (de) 1989-05-31 1990-05-25 Integrierte Speicherschaltung mit einem Leseverstärker.
CN90103239A CN1019614B (zh) 1989-05-31 1990-05-28 包含读出放大器的集成存储器
IE191090A IE71667B1 (en) 1989-05-31 1990-05-28 Integrated memory comprising a sense amplifier
CA002017607A CA2017607C (en) 1989-05-31 1990-05-28 Integrated memory comprising a sense amplifier
FI902648A FI902648A0 (fi) 1989-05-31 1990-05-28 Integrerat minne med en detektorfoerstaerkare.
JP2138618A JP2760634B2 (ja) 1989-05-31 1990-05-30 集積メモリ
KR1019900007832A KR0155374B1 (ko) 1989-05-31 1990-05-30 집적 전계 효과 트랜지스터 메모리
US07/707,556 US5253137A (en) 1989-05-31 1991-05-30 Integrated circuit having a sense amplifier
HK61896A HK61896A (en) 1989-05-31 1996-04-11 Integrated memory comprising a sense amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8901376A NL8901376A (nl) 1989-05-31 1989-05-31 Geintegreerde geheugenschakeling met een leesversterker.
NL8901376 1989-05-31

Publications (1)

Publication Number Publication Date
NL8901376A true NL8901376A (nl) 1990-12-17

Family

ID=19854753

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8901376A NL8901376A (nl) 1989-05-31 1989-05-31 Geintegreerde geheugenschakeling met een leesversterker.

Country Status (11)

Country Link
EP (1) EP0400728B1 (ko)
JP (1) JP2760634B2 (ko)
KR (1) KR0155374B1 (ko)
CN (1) CN1019614B (ko)
CA (1) CA2017607C (ko)
DE (1) DE69021273T2 (ko)
ES (1) ES2077630T3 (ko)
FI (1) FI902648A0 (ko)
HK (1) HK61896A (ko)
IE (1) IE71667B1 (ko)
NL (1) NL8901376A (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2531226Y2 (ja) * 1992-11-26 1997-04-02 喜和 石渡 紙幣の収納機構
EP0747903B1 (en) * 1995-04-28 2002-04-10 STMicroelectronics S.r.l. Reading circuit for memory cells devices having a low supply voltage
JPH10133908A (ja) * 1996-10-29 1998-05-22 Mitsubishi Electric Corp マイクロプロセッサ
US6754119B2 (en) * 2001-07-26 2004-06-22 Samsung Electronics Co., Ltd. Sense amplifier for memory device
KR100408420B1 (ko) * 2002-01-09 2003-12-03 삼성전자주식회사 감지증폭기의 센싱속도를 향상시킬 수 있는 반도체메모리장치의 감지증폭기 구동회로
CN1326148C (zh) * 2002-08-14 2007-07-11 力旺电子股份有限公司 利用栅极互耦驱动的负载晶体管读取数据的快速存储器
JP4351178B2 (ja) * 2005-02-25 2009-10-28 寛治 大塚 半導体記憶装置
JP2007133987A (ja) * 2005-11-11 2007-05-31 Toshiba Corp 半導体記憶装置および半導体記憶装置の駆動方法
KR100897252B1 (ko) 2006-06-30 2009-05-14 주식회사 하이닉스반도체 반도체 메모리 장치
CN101399018B (zh) * 2007-09-26 2011-09-14 中华映管股份有限公司 信号控制电路及方法、液晶显示器及其时序控制器
GB2510828B (en) * 2013-02-13 2015-06-03 Surecore Ltd Single wordline low-power SRAM cells

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039861A (en) * 1976-02-09 1977-08-02 International Business Machines Corporation Cross-coupled charge transfer sense amplifier circuits

Also Published As

Publication number Publication date
CA2017607A1 (en) 1990-11-30
KR0155374B1 (ko) 1998-12-01
KR900019043A (ko) 1990-12-22
FI902648A0 (fi) 1990-05-28
JP2760634B2 (ja) 1998-06-04
CN1019614B (zh) 1992-12-23
IE71667B1 (en) 1997-02-26
ES2077630T3 (es) 1995-12-01
HK61896A (en) 1996-04-19
CN1048282A (zh) 1991-01-02
CA2017607C (en) 2001-07-24
IE901910L (en) 1990-11-30
DE69021273T2 (de) 1996-04-04
EP0400728A1 (en) 1990-12-05
EP0400728B1 (en) 1995-08-02
DE69021273D1 (de) 1995-09-07
JPH0319198A (ja) 1991-01-28

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Legal Events

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A1B A search report has been drawn up
BV The patent application has lapsed