FI3594952T3 - Flash-muistin virkistyksen hallinta - Google Patents
Flash-muistin virkistyksen hallintaInfo
- Publication number
- FI3594952T3 FI3594952T3 FIEP19188896.5T FI19188896T FI3594952T3 FI 3594952 T3 FI3594952 T3 FI 3594952T3 FI 19188896 T FI19188896 T FI 19188896T FI 3594952 T3 FI3594952 T3 FI 3594952T3
- Authority
- FI
- Finland
- Prior art keywords
- register
- refresh
- flash memory
- host device
- operations
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662352393P | 2016-06-20 | 2016-06-20 | |
| US15/615,827 US10199115B2 (en) | 2016-06-20 | 2017-06-06 | Managing refresh for flash memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FI3594952T3 true FI3594952T3 (fi) | 2026-04-17 |
Family
ID=60659776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FIEP19188896.5T FI3594952T3 (fi) | 2016-06-20 | 2017-06-07 | Flash-muistin virkistyksen hallinta |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US10199115B2 (https=) |
| EP (3) | EP3472840B1 (https=) |
| JP (2) | JP7213690B2 (https=) |
| KR (1) | KR102508868B1 (https=) |
| CN (2) | CN114758711A (https=) |
| BR (1) | BR112018075661A2 (https=) |
| CA (1) | CA3026804C (https=) |
| DK (1) | DK3594952T3 (https=) |
| ES (1) | ES2874279T3 (https=) |
| FI (1) | FI3594952T3 (https=) |
| WO (1) | WO2017222818A1 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10199115B2 (en) * | 2016-06-20 | 2019-02-05 | Qualcomm Incorporated | Managing refresh for flash memory |
| US10885991B2 (en) * | 2017-04-04 | 2021-01-05 | Sandisk Technologies Llc | Data rewrite during refresh window |
| KR102658230B1 (ko) | 2018-06-01 | 2024-04-17 | 삼성전자주식회사 | 반도체 메모리 장치, 이를 포함하는 메모리 시스템 및 반도체 메모리 장치의 동작 방법 |
| KR102611382B1 (ko) | 2018-09-19 | 2023-12-07 | 삼성디스플레이 주식회사 | 터치 감지 유닛과 그를 포함하는 표시 장치 |
| US10761727B2 (en) * | 2018-11-19 | 2020-09-01 | Micron Technology, Inc. | Scan frequency modulation based on memory density or block usage |
| US10725706B1 (en) * | 2019-01-23 | 2020-07-28 | Qualcomm Incorporated | Apparatus and method of scheduling universal flash storage refresh operations according to a refresh handover mechanism |
| US10811076B1 (en) * | 2019-06-29 | 2020-10-20 | Intel Corporation | Battery life based on inhibited memory refreshes |
| US11404131B2 (en) * | 2019-07-12 | 2022-08-02 | Micron Technology, Inc. | Decision for executing full-memory refresh during memory sub-system power-on stage |
| US11037641B1 (en) * | 2019-12-05 | 2021-06-15 | Sandisk Technologies Llc | Temperature and cycling dependent refresh operation for memory cells |
| US11500567B2 (en) | 2019-12-06 | 2022-11-15 | Micron Technology, Inc. | Configuring partitions of a memory sub-system for different data |
| US11475929B2 (en) | 2020-02-27 | 2022-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory refresh |
| DE102020133713A1 (de) * | 2020-02-27 | 2021-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Speicheraktualisierung |
| CN111798906A (zh) * | 2020-06-29 | 2020-10-20 | 深圳市芯天下技术有限公司 | 提高非型闪存数据保持能力方法、系统、存储介质和终端 |
| US12327046B2 (en) | 2021-06-25 | 2025-06-10 | SanDisk Technologies, Inc. | Data retention-specific refresh read |
| JP2023141335A (ja) | 2022-03-23 | 2023-10-05 | キオクシア株式会社 | メモリシステムおよびリフレッシュ方法 |
| US12237031B2 (en) * | 2022-06-01 | 2025-02-25 | Micron Technology, Inc. | Refresh rate selection for a memory built-in self-test |
| US12282687B2 (en) * | 2022-06-09 | 2025-04-22 | Micron Technology, Inc. | Prioritization of background media management operations in memory systems |
| CN116312673B (zh) * | 2023-03-16 | 2024-08-06 | 海光集成电路设计(北京)有限公司 | 一种数据自刷新电路、芯片及电子设备 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3641066B2 (ja) * | 1995-05-30 | 2005-04-20 | 株式会社東芝 | フラッシュメモリを混載するマイクロコンピュータのデータ書換え方法 |
| JP2000011670A (ja) | 1998-06-25 | 2000-01-14 | Canon Inc | 不揮発性メモリを有する機器 |
| US7089344B1 (en) * | 2000-06-09 | 2006-08-08 | Motorola, Inc. | Integrated processor platform supporting wireless handheld multi-media devices |
| JP2005025363A (ja) * | 2003-06-30 | 2005-01-27 | Sony Corp | バースト転送モード付データ転送装置、データ転送方法及びデータ転送プログラム |
| US7342841B2 (en) * | 2004-12-21 | 2008-03-11 | Intel Corporation | Method, apparatus, and system for active refresh management |
| US7685371B1 (en) * | 2006-04-19 | 2010-03-23 | Nvidia Corporation | Hierarchical flush barrier mechanism with deadlock avoidance |
| US7861113B2 (en) * | 2007-03-16 | 2010-12-28 | Dot Hill Systems Corporation | Method and apparatus for operating storage controller system in elevated temperature environment |
| JP5216244B2 (ja) | 2007-05-31 | 2013-06-19 | 株式会社東芝 | データリフレッシュ装置、及びデータリフレッシュ方法 |
| JP5478855B2 (ja) | 2008-08-08 | 2014-04-23 | ルネサスエレクトロニクス株式会社 | 不揮発性メモリ制御方法及び半導体装置 |
| JP5422984B2 (ja) | 2008-12-08 | 2014-02-19 | 富士通株式会社 | 不揮発性メモリ、メモリ制御装置、メモリ制御システムおよび不揮発性メモリの制御方法 |
| JP5834303B2 (ja) * | 2008-12-30 | 2015-12-16 | ラウンド ロック リサーチ リミテッド ライアビリティー カンパニー | 作動温度範囲を拡張した不揮発性メモリ |
| US8762656B2 (en) | 2008-12-30 | 2014-06-24 | Micron Technology, Inc. | Temperature alert and low rate refresh for a non-volatile memory |
| DE112009005413B4 (de) * | 2009-12-02 | 2018-11-29 | Micron Technology, Inc. | Verfahren zur Aktualisierung für nichtflüchtige Speicher und Nichtflüchtiger-Speicher-Vorrichtung |
| KR101798920B1 (ko) * | 2010-11-30 | 2017-11-17 | 삼성전자주식회사 | 다중 주기 셀프 리프레쉬를 수행하는 반도체 메모리 장치 및이의 검증 방법 |
| KR101962874B1 (ko) * | 2012-04-24 | 2019-03-27 | 삼성전자주식회사 | 메모리 장치, 메모리 컨트롤러, 메모리 시스템 및 이의 동작 방법 |
| US9236110B2 (en) * | 2012-06-30 | 2016-01-12 | Intel Corporation | Row hammer refresh command |
| KR20140007989A (ko) | 2012-07-09 | 2014-01-21 | 삼성전자주식회사 | 불휘발성 램을 포함하는 사용자 장치 및 그것의 설정 방법 |
| KR20140076735A (ko) * | 2012-12-13 | 2014-06-23 | 삼성전자주식회사 | 휘발성 메모리 장치 및 메모리 시스템 |
| US9076499B2 (en) * | 2012-12-28 | 2015-07-07 | Intel Corporation | Refresh rate performance based on in-system weak bit detection |
| JP2014178974A (ja) | 2013-03-15 | 2014-09-25 | Nec Casio Mobile Communications Ltd | 電子機器、その制御方法及びプログラムに関する。 |
| US9336855B2 (en) * | 2013-05-14 | 2016-05-10 | Qualcomm Incorporated | Methods and systems for smart refresh of dynamic random access memory |
| JP6011512B2 (ja) | 2013-10-29 | 2016-10-19 | 株式会社デンソー | データリフレッシュ装置 |
| KR101601643B1 (ko) * | 2013-11-08 | 2016-03-09 | 주식회사 피델릭스 | 효율적으로 리프레쉬 동작을 수행하는 플래시 메모리 장치 |
| US9817749B2 (en) | 2013-12-04 | 2017-11-14 | Sandisk Technologies Llc | Apparatus and method of offloading processing from a data storage device to a host device |
| KR102289001B1 (ko) * | 2014-06-09 | 2021-08-13 | 삼성전자주식회사 | 솔리드 스테이드 드라이브 및 그것의 동작 방법 |
| US10199115B2 (en) * | 2016-06-20 | 2019-02-05 | Qualcomm Incorporated | Managing refresh for flash memory |
-
2017
- 2017-06-06 US US15/615,827 patent/US10199115B2/en active Active
- 2017-06-07 BR BR112018075661-0A patent/BR112018075661A2/pt not_active Application Discontinuation
- 2017-06-07 JP JP2018566222A patent/JP7213690B2/ja active Active
- 2017-06-07 ES ES17739376T patent/ES2874279T3/es active Active
- 2017-06-07 CN CN202210480333.3A patent/CN114758711A/zh active Pending
- 2017-06-07 EP EP17739376.6A patent/EP3472840B1/en active Active
- 2017-06-07 FI FIEP19188896.5T patent/FI3594952T3/fi active
- 2017-06-07 WO PCT/US2017/036397 patent/WO2017222818A1/en not_active Ceased
- 2017-06-07 EP EP19188896.5A patent/EP3594952B1/en active Active
- 2017-06-07 CN CN201780037555.5A patent/CN109328386B/zh active Active
- 2017-06-07 EP EP25219563.1A patent/EP4682887A3/en active Pending
- 2017-06-07 DK DK19188896.5T patent/DK3594952T3/da active
- 2017-06-07 KR KR1020187036425A patent/KR102508868B1/ko active Active
- 2017-06-07 CA CA3026804A patent/CA3026804C/en active Active
-
2018
- 2018-10-30 US US16/175,745 patent/US10360987B2/en active Active
-
2022
- 2022-02-02 JP JP2022014848A patent/JP7348325B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3472840A1 (en) | 2019-04-24 |
| CN114758711A (zh) | 2022-07-15 |
| EP3594952A1 (en) | 2020-01-15 |
| CA3026804C (en) | 2023-09-05 |
| US10360987B2 (en) | 2019-07-23 |
| WO2017222818A1 (en) | 2017-12-28 |
| EP3594952B1 (en) | 2026-01-21 |
| CN109328386B (zh) | 2022-04-29 |
| ES2874279T3 (es) | 2021-11-04 |
| JP2022070884A (ja) | 2022-05-13 |
| US20190066811A1 (en) | 2019-02-28 |
| DK3594952T3 (da) | 2026-04-20 |
| KR20190016968A (ko) | 2019-02-19 |
| JP2019522284A (ja) | 2019-08-08 |
| CN109328386A (zh) | 2019-02-12 |
| EP4682887A2 (en) | 2026-01-21 |
| CA3026804A1 (en) | 2017-12-28 |
| KR102508868B1 (ko) | 2023-03-09 |
| JP7213690B2 (ja) | 2023-01-27 |
| US10199115B2 (en) | 2019-02-05 |
| EP4682887A3 (en) | 2026-04-22 |
| EP3472840B1 (en) | 2021-02-24 |
| BR112018075661A2 (pt) | 2019-04-09 |
| JP7348325B2 (ja) | 2023-09-20 |
| US20170365352A1 (en) | 2017-12-21 |
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