ES8602304A1 - Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaico - Google Patents

Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaico

Info

Publication number
ES8602304A1
ES8602304A1 ES537258A ES537258A ES8602304A1 ES 8602304 A1 ES8602304 A1 ES 8602304A1 ES 537258 A ES537258 A ES 537258A ES 537258 A ES537258 A ES 537258A ES 8602304 A1 ES8602304 A1 ES 8602304A1
Authority
ES
Spain
Prior art keywords
circuit current
short circuit
semiconductor region
light transmissive
current paths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES537258A
Other languages
English (en)
Other versions
ES537258A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/435,890 external-priority patent/US4451970A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8602304A1 publication Critical patent/ES8602304A1/es
Publication of ES537258A0 publication Critical patent/ES537258A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

SISTEMA PARA DETECTAR Y ELIMINAR LAS TRAYECTORIAS DE CORRIENTE DE CORTOCIRCUITO EN DISPOSITIVOS FOTOVOLTAICOS. CONSISTE EN POLARIZAR EL DISPOSITIVO FOTOVOLTAICO, MEDIANTE LA APLICACION DIRECTA DE ELECTRODOS CONECTADOS ENTRE EL SUSTRATO Y EL MATERIAL TRANSMISOR DE LUZ O INDIRECTAMENTE A TRAVES DE UNA SOLUCION CONDUCTORA, PARA CONVERTIR LAS TRAYECTORIAS DE CORRIENTE DE CORTOCIRCUITO LATENTES EN TRAYECTORIAS DE CORRIENTE DE CORTOCIRCUITO EXISTENTES. PARA ELLO LA RESISTIVIDAD DE LAS TRAYECTORIAS DE CORRIENTE DE CORTOCIRCUITO SE AUMENTA CONSIDERABLEMENTE EN LA INTERFAZ ENTRE EL MATERIAL TRANSMISOR DE LUZ Y LA REGION SEMICONDUCTORA, AISLANDO ELECTRICAMENTE MEDIANTE LA APLICACION DE UNA SOLUCION DILUIDA DE ELECTROLITO HACIA EL MATERIAL TRANSMISOR DE LUZ. APLICADO EN LA FABRICACION DE ELEMENTOS FOTOVOLTAICOS SEMICONDUCTORES AMORFOS DE AREA GRANDE.
ES537258A 1982-10-21 1984-10-31 Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaico Granted ES537258A0 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/435,890 US4451970A (en) 1982-10-21 1982-10-21 System and method for eliminating short circuit current paths in photovoltaic devices
US06/520,054 US4464823A (en) 1982-10-21 1983-08-03 Method for eliminating short and latent short circuit current paths in photovoltaic devices

Publications (2)

Publication Number Publication Date
ES8602304A1 true ES8602304A1 (es) 1985-11-01
ES537258A0 ES537258A0 (es) 1985-11-01

Family

ID=27030730

Family Applications (1)

Application Number Title Priority Date Filing Date
ES537258A Granted ES537258A0 (es) 1982-10-21 1984-10-31 Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaico

Country Status (3)

Country Link
US (1) US4464823A (es)
CA (1) CA1209234A (es)
ES (1) ES537258A0 (es)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543171A (en) * 1984-03-22 1985-09-24 Rca Corporation Method for eliminating defects in a photodetector
KR900006772B1 (ko) * 1985-11-06 1990-09-21 세미콘닥터 에너지 라보라토리 컴파니 리미티드 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
US4680616A (en) * 1986-05-09 1987-07-14 Chronar Corp. Removal of defects from semiconductors
US4749454A (en) * 1986-11-17 1988-06-07 Solarex Corporation Method of removing electrical shorts and shunts from a thin-film semiconductor device
US5320723A (en) * 1990-05-07 1994-06-14 Canon Kabushiki Kaisha Method of removing short-circuit portion in photoelectric conversion device
JP2686022B2 (ja) * 1992-07-01 1997-12-08 キヤノン株式会社 光起電力素子の製造方法
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US6228662B1 (en) 1999-03-24 2001-05-08 Kaneka Corporation Method for removing short-circuited sections of a solar cell
AU766466B2 (en) * 1999-05-14 2003-10-16 Kaneka Corporation Reverse biasing apparatus for solar battery module
NL1013204C2 (nl) 1999-10-04 2001-04-05 Stichting Energie Inrichting voor het lokaliseren van productiefouten in een fotovolta´sch element.
US6423595B1 (en) 2001-04-19 2002-07-23 United Solar Systems Corporation Method for scribing a semiconductor device
JP2006508253A (ja) * 2002-11-27 2006-03-09 ザ・ユニバーシティ・オブ・トレド 液状電解物を有した集積型光電気化学とそのシステム
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
JP2007189199A (ja) * 2005-12-12 2007-07-26 Tdk Corp キャパシタおよびその製造方法
WO2009073501A2 (en) * 2007-11-30 2009-06-11 University Of Toledo System for diagnosis and treatment of photovoltaic and other semiconductor devices
US7733111B1 (en) 2008-03-11 2010-06-08 Kla-Tencor Corporation Segmented optical and electrical testing for photovoltaic devices
US7989729B1 (en) 2008-03-11 2011-08-02 Kla-Tencor Corporation Detecting and repairing defects of photovoltaic devices
WO2009120974A2 (en) * 2008-03-28 2009-10-01 University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
US8158454B2 (en) 2008-09-09 2012-04-17 Sanyo Electric Co., Ltd. Method for manufacturing solar cell module
WO2010119841A1 (ja) * 2009-04-15 2010-10-21 シャープ株式会社 太陽電池パネル検査装置、太陽電池パネル検査方法および太陽電池パネルの製造方法
CN103959548B (zh) * 2011-11-14 2017-02-15 日本麦可罗尼克斯股份有限公司 片状电池的修理装置
JP6049556B2 (ja) 2013-07-01 2016-12-21 株式会社東芝 太陽電池、太陽電池モジュール及び太陽電池の製造方法
US9564270B2 (en) 2013-12-27 2017-02-07 Tdk Corporation Thin film capacitor
JP6446877B2 (ja) 2014-07-16 2019-01-09 Tdk株式会社 薄膜キャパシタ
JP6365216B2 (ja) 2014-10-15 2018-08-01 Tdk株式会社 薄膜キャパシタ
JP6641872B2 (ja) 2015-10-15 2020-02-05 Tdk株式会社 電子デバイスシート

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301409A (en) * 1978-06-06 1981-11-17 California Institute Of Technology Solar cell anomaly detection method and apparatus
US4166918A (en) * 1978-07-19 1979-09-04 Rca Corporation Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
JPS5669872A (en) * 1979-11-13 1981-06-11 Fuji Electric Co Ltd Manufacture of solar cell
JPS5946426B2 (ja) * 1979-11-13 1984-11-12 富士電機株式会社 太陽電池の製造方法
JPS5756941A (en) * 1980-09-24 1982-04-05 Nippon Telegr & Teleph Corp <Ntt> Evaluation method for defect of thin insulating film
US4385971A (en) * 1981-06-26 1983-05-31 Rca Corporation Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells
US4420497A (en) * 1981-08-24 1983-12-13 Fairchild Camera And Instrument Corporation Method of detecting and repairing latent defects in a semiconductor dielectric layer
US4419530A (en) * 1982-02-11 1983-12-06 Energy Conversion Devices, Inc. Solar cell and method for producing same

Also Published As

Publication number Publication date
CA1209234A (en) 1986-08-05
ES537258A0 (es) 1985-11-01
US4464823A (en) 1984-08-14

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