JPS5756941A - Evaluation method for defect of thin insulating film - Google Patents

Evaluation method for defect of thin insulating film

Info

Publication number
JPS5756941A
JPS5756941A JP13148480A JP13148480A JPS5756941A JP S5756941 A JPS5756941 A JP S5756941A JP 13148480 A JP13148480 A JP 13148480A JP 13148480 A JP13148480 A JP 13148480A JP S5756941 A JPS5756941 A JP S5756941A
Authority
JP
Japan
Prior art keywords
film
insulating film
defect
etching
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13148480A
Other languages
Japanese (ja)
Inventor
Nagaaki Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13148480A priority Critical patent/JPS5756941A/en
Publication of JPS5756941A publication Critical patent/JPS5756941A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To simply evaluate the defect position without damaging an insulating film by forming a thin conductive film on a thin insulating film as an anode, and electrolyzing in DC in electrolyte to simultaneously produce both electrolytic oxidation and etching on the conductive film on the defect of the insulating film. CONSTITUTION:Many thin conductive films 3, e.g., Mo or the like are arranged insularly (e.g., in the size of 8mum.8mum) on a thin insulating film 2, e.g., SiO2 film formed on a conductive Si substrate 1 as a specimen. This specimen is treated by electrolysis in DC in an electrolyte 4 made, for example, of phosphoric acid, acetic acid, nitric acid with a Pt electrode 5 as a cathode. The conductive films 3 formed on the defect 6 of the film 2 is simultaneously carried out in the anodic oxidation and etching by this treatment, and the film 2 can be removed without damage. In this manner, the defect position formed in the microminiature region can be readily discriminated, and can be observed and evaluated by TEM by reducing the thickness upon etching of the back surface of the substrate, for example.
JP13148480A 1980-09-24 1980-09-24 Evaluation method for defect of thin insulating film Pending JPS5756941A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13148480A JPS5756941A (en) 1980-09-24 1980-09-24 Evaluation method for defect of thin insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13148480A JPS5756941A (en) 1980-09-24 1980-09-24 Evaluation method for defect of thin insulating film

Publications (1)

Publication Number Publication Date
JPS5756941A true JPS5756941A (en) 1982-04-05

Family

ID=15059053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13148480A Pending JPS5756941A (en) 1980-09-24 1980-09-24 Evaluation method for defect of thin insulating film

Country Status (1)

Country Link
JP (1) JPS5756941A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
JPS6248757A (en) * 1985-08-27 1987-03-03 Asahi Chem Ind Co Ltd Hydrogenated block copolymer composition having improved elasticity
JPH02142842A (en) * 1988-11-24 1990-05-31 Asahi Chem Ind Co Ltd Molded part of information processing machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
JPS6248757A (en) * 1985-08-27 1987-03-03 Asahi Chem Ind Co Ltd Hydrogenated block copolymer composition having improved elasticity
JPH0149424B2 (en) * 1985-08-27 1989-10-24 Asahi Chemical Ind
JPH02142842A (en) * 1988-11-24 1990-05-31 Asahi Chem Ind Co Ltd Molded part of information processing machine

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