ES8503889A1 - Un metodo para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes. - Google Patents

Un metodo para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes.

Info

Publication number
ES8503889A1
ES8503889A1 ES526597A ES526597A ES8503889A1 ES 8503889 A1 ES8503889 A1 ES 8503889A1 ES 526597 A ES526597 A ES 526597A ES 526597 A ES526597 A ES 526597A ES 8503889 A1 ES8503889 A1 ES 8503889A1
Authority
ES
Spain
Prior art keywords
circuit current
short circuit
current paths
latent
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES526597A
Other languages
English (en)
Spanish (es)
Other versions
ES526597A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/520,054 external-priority patent/US4464823A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES526597A0 publication Critical patent/ES526597A0/es
Publication of ES8503889A1 publication Critical patent/ES8503889A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
ES526597A 1983-08-03 1983-10-20 Un metodo para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes. Expired ES8503889A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/520,054 US4464823A (en) 1982-10-21 1983-08-03 Method for eliminating short and latent short circuit current paths in photovoltaic devices

Publications (2)

Publication Number Publication Date
ES526597A0 ES526597A0 (es) 1985-03-01
ES8503889A1 true ES8503889A1 (es) 1985-03-01

Family

ID=24071012

Family Applications (1)

Application Number Title Priority Date Filing Date
ES526597A Expired ES8503889A1 (es) 1983-08-03 1983-10-20 Un metodo para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes.

Country Status (8)

Country Link
EP (1) EP0134364A3 (OSRAM)
JP (1) JPS6046080A (OSRAM)
KR (1) KR850003476A (OSRAM)
AU (1) AU2042183A (OSRAM)
BR (1) BR8305792A (OSRAM)
ES (1) ES8503889A1 (OSRAM)
IN (1) IN160221B (OSRAM)
MX (1) MX159519A (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213910B1 (en) * 1985-08-24 1994-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
US6228662B1 (en) 1999-03-24 2001-05-08 Kaneka Corporation Method for removing short-circuited sections of a solar cell
DE69907866T2 (de) * 1999-03-25 2004-03-11 Kaneka Corp. Verfahren zum Herstellen von Dünnschicht-Solarzellen-Modulen
JP4627575B2 (ja) * 1999-08-12 2011-02-09 株式会社カネカ 太陽電池の短絡部除去方法
AU766466B2 (en) * 1999-05-14 2003-10-16 Kaneka Corporation Reverse biasing apparatus for solar battery module
JP2007189199A (ja) 2005-12-12 2007-07-26 Tdk Corp キャパシタおよびその製造方法
US8158454B2 (en) 2008-09-09 2012-04-17 Sanyo Electric Co., Ltd. Method for manufacturing solar cell module
KR101484055B1 (ko) * 2011-11-14 2015-01-20 가부시키가이샤 니혼 마이크로닉스 시트상 전지의 리페어 장치
DE102018001057B4 (de) 2018-02-07 2025-12-04 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle
CN108233329B (zh) * 2018-03-16 2024-05-31 西安赛诺克新能源科技有限公司 一种提高主电路断开响应速度的保护电路
CN117353651B (zh) * 2023-10-16 2024-04-16 中科宏一教育科技集团有限公司 光伏系统控制方法、装置、设备和介质

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4166918A (en) * 1978-07-19 1979-09-04 Rca Corporation Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
JPS5683981A (en) * 1979-12-13 1981-07-08 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture
US4385971A (en) * 1981-06-26 1983-05-31 Rca Corporation Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells

Also Published As

Publication number Publication date
ES526597A0 (es) 1985-03-01
MX159519A (es) 1989-06-26
JPS6046080A (ja) 1985-03-12
EP0134364A2 (en) 1985-03-20
BR8305792A (pt) 1985-05-21
JPH0572756B2 (OSRAM) 1993-10-12
EP0134364A3 (en) 1986-06-04
AU2042183A (en) 1985-02-07
IN160221B (OSRAM) 1987-07-04
KR850003476A (ko) 1985-06-17

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