JPS57210642A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57210642A
JPS57210642A JP9381581A JP9381581A JPS57210642A JP S57210642 A JPS57210642 A JP S57210642A JP 9381581 A JP9381581 A JP 9381581A JP 9381581 A JP9381581 A JP 9381581A JP S57210642 A JPS57210642 A JP S57210642A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
wires
film
pinholes
directly under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9381581A
Other languages
Japanese (ja)
Inventor
Yoshiharu Nagayama
Tadao Kachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9381581A priority Critical patent/JPS57210642A/en
Publication of JPS57210642A publication Critical patent/JPS57210642A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable to allow an insulating film to occur a defect such as pinholes or the like in the partial region at the producing time by electrically isolating a semiconductor region directly under wires of different voltages aligned in parallel with each other on a semiconductor substrate at every wire. CONSTITUTION:Regions 5a, 5b of a semiconductor substrate directly under wires 4a, 4b of different voltages provided on a surface insulating film 3 on a semiconductor substrate 1 are electrically insulated via an isolation 2 in advance in an oxidized film or a P-N junction or the like. In this manner, a leakage for shortcircuiting the wires 4a, 4b through the substrate from the pinholes 6 occured at the film 3 is prevented, thereby improving the yield and the reliability of an IC.
JP9381581A 1981-06-19 1981-06-19 Semiconductor device Pending JPS57210642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9381581A JPS57210642A (en) 1981-06-19 1981-06-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9381581A JPS57210642A (en) 1981-06-19 1981-06-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57210642A true JPS57210642A (en) 1982-12-24

Family

ID=14092891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9381581A Pending JPS57210642A (en) 1981-06-19 1981-06-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57210642A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276648A (en) * 1985-09-30 1987-04-08 Fujitsu Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276648A (en) * 1985-09-30 1987-04-08 Fujitsu Ltd Semiconductor integrated circuit device

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