ES8302364A1 - Un dispositivo semiconductor sensible a radiacion - Google Patents
Un dispositivo semiconductor sensible a radiacionInfo
- Publication number
- ES8302364A1 ES8302364A1 ES503658A ES503658A ES8302364A1 ES 8302364 A1 ES8302364 A1 ES 8302364A1 ES 503658 A ES503658 A ES 503658A ES 503658 A ES503658 A ES 503658A ES 8302364 A1 ES8302364 A1 ES 8302364A1
- Authority
- ES
- Spain
- Prior art keywords
- junctions
- radiation
- semiconductor device
- sensitive semiconductor
- realized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000005855 radiation Effects 0.000 title abstract 3
- 239000002800 charge carrier Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
Abstract
DISPOSITIVO PARA SEMICONDUCTOR SENSIBLE A LA RADIACION. COMPRENDE UN CUERPO SEMICONDUCTOR QUE INCLUYE, EN UNA SUPERFICIE PLANA, AL MENOS UN DIODO SENSIBLE A LA RADIACION QUE TIENE AL MENOS DOS SUBELEMENTOS DE LOS CUALES UNO TIENE UNA CONEXION PARA REGISTRAR CORRIENTE GENERADA POR RADIACION A TRAVES DEL SUBELEMENTO. LA DISTANCIA ENTRE SUBELEMENTOS ADYACENTES, COMO MAXIMO 19 MICROMETROS, AL SER TAN PEQUEÑA HACE QUE AL APLICARSE UNA TENSION INVERSA A TRAVES DEL DIODO SENSIBLE A LA RADIACION, PUEDA EMPOBRECERSE DE PORTADORES DE REGIONES PRESENTES ENTRE SUBELEMENTOS ADYACENTES MEDIANTE REGIONES DE EMPOBRECIMIENTO ASOCIADAS CON LOS SUBELEMENTOS LO QUE HACE QUE NO APAREZCAN PORTADORES DE CARGA QUE CONTRIBUYAN A LA CORRIENTE FOTOELECTRICA POR DIFUSION, HACIENDO QUE LA CORRIENTE FOTOELECTRICA NO COMPRENDA NINGUNA CONTRIBUCION DETERMINADA POR DIFUSION, LO QUE PERMITE UN TIEMPO DE RESPUESTA CORTO DEL DIODO. SE UTILIZAN EN CIRCUITOS FOTOSENSIBLES PARA VISUALIZAR IMAGENES Y EN DISPOSITIVOS DE SEGUIMIENTO DE PISTA O POSICIONAMIENTO DE HACES LUMINOSOS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8003906A NL8003906A (nl) | 1980-07-07 | 1980-07-07 | Stralingsgevoelige halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8302364A1 true ES8302364A1 (es) | 1982-12-16 |
ES503658A0 ES503658A0 (es) | 1982-12-16 |
Family
ID=19835577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES503658A Granted ES503658A0 (es) | 1980-07-07 | 1981-07-03 | Un dispositivo semiconductor sensible a radiacion |
Country Status (11)
Country | Link |
---|---|
US (1) | US4791468A (es) |
JP (1) | JPS5748275A (es) |
AT (1) | AT387106B (es) |
AU (1) | AU546782B2 (es) |
CA (1) | CA1189175A (es) |
DE (1) | DE3124238A1 (es) |
ES (1) | ES503658A0 (es) |
FR (1) | FR2486309B1 (es) |
GB (1) | GB2080026B (es) |
IT (1) | IT1137597B (es) |
NL (1) | NL8003906A (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128019B (en) * | 1982-09-23 | 1986-10-08 | Secr Defence | Infrared radiation detection device |
EP0132870B1 (en) * | 1983-07-06 | 1987-09-02 | Agfa-Gevaert N.V. | Radiation-sensitive semiconductor device |
GB2151843A (en) * | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
US4680471A (en) * | 1985-03-20 | 1987-07-14 | Motorola, Inc. | Integrated circuit packaging |
NL8501489A (nl) * | 1985-05-24 | 1986-12-16 | Philips Nv | Positie-gevoelige stralingsdetector. |
NL8501501A (nl) * | 1985-05-24 | 1986-12-16 | Tno | Foto-elektrische omzetter. |
NL8601719A (nl) * | 1986-07-02 | 1988-02-01 | Philips Nv | Electronisch instelbare positiegevoelige stralingsdetector, focusfoutdetectiestelsel voorzien van een dergelijke stralingsdetector, en optische lees- en/of schrijfinrichting voorzien van een dergelijk focusfoutdetectiestelsel. |
DE3728691A1 (de) * | 1986-08-28 | 1988-03-10 | Nissan Motor | Lichtempfindlicher positionssensor |
JP2757985B2 (ja) * | 1986-10-01 | 1998-05-25 | ソニー株式会社 | 受光装置とその製造方法 |
NL8700370A (nl) * | 1987-02-16 | 1988-09-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
JP2712208B2 (ja) * | 1987-12-07 | 1998-02-10 | 松下電器産業株式会社 | 受光素子 |
JPH01248676A (ja) * | 1988-03-30 | 1989-10-04 | Matsushita Electron Corp | 光半導体装置 |
NL8901629A (nl) * | 1989-06-28 | 1991-01-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting. |
DE3929845A1 (de) * | 1989-09-08 | 1991-03-21 | Messerschmitt Boelkow Blohm | Einrichtung zur wellenlaengenbestimmung optischer strahlung |
AT393009B (de) * | 1989-11-07 | 1991-07-25 | Poska Albertas Ionas Antanovic | Selbsttaetiges ventil |
DE4326754A1 (de) * | 1993-08-11 | 1995-02-16 | Daimler Benz Ag | Halbleiter-Photodetektor |
DE4413481C2 (de) * | 1994-04-19 | 1999-12-16 | Vishay Semiconductor Gmbh | Optoelektronisches Bauelement |
TWI257181B (en) * | 2003-07-28 | 2006-06-21 | Rohm Co Ltd | Semiconductor module |
US7388187B1 (en) * | 2007-03-06 | 2008-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cross-talk reduction through deep pixel well implant for image sensors |
CN102723349B (zh) * | 2012-06-26 | 2015-01-21 | 中国科学院上海高等研究院 | 带有隔离层的cmos图像传感器及其制作方法 |
RU204784U1 (ru) * | 2020-12-23 | 2021-06-10 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В.Ломоносова" (МГУ) | Универсальный полупроводниковый спектрометр для детектирования корпускулярных космических излучений |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3486029A (en) * | 1965-12-29 | 1969-12-23 | Gen Electric | Radiative interconnection arrangement |
US3593067A (en) * | 1967-08-07 | 1971-07-13 | Honeywell Inc | Semiconductor radiation sensor |
NL6714455A (es) * | 1967-10-25 | 1969-04-29 | ||
US3548233A (en) * | 1968-11-29 | 1970-12-15 | Rca Corp | Charge storage device with pn junction diode array target having semiconductor contact pads |
CA879979A (en) * | 1969-09-26 | 1971-08-31 | J. Mcintyre Robert | Quadrant photodiode |
US3601668A (en) * | 1969-11-07 | 1971-08-24 | Fairchild Camera Instr Co | Surface depletion layer photodevice |
US3916429A (en) * | 1971-12-20 | 1975-10-28 | Philips Corp | Gated silicon diode array camera tube |
JPS5213918B2 (es) * | 1972-02-02 | 1977-04-18 | ||
JPS5641186B2 (es) * | 1972-03-03 | 1981-09-26 | ||
US3949223A (en) * | 1973-11-01 | 1976-04-06 | Honeywell Inc. | Monolithic photoconductive detector array |
US4025943A (en) * | 1976-03-22 | 1977-05-24 | Canadian Patents And Development Limited | Photogeneration channel in front illuminated solid state silicon imaging devices |
US4067104A (en) * | 1977-02-24 | 1978-01-10 | Rockwell International Corporation | Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components |
JPS5427384A (en) * | 1977-08-02 | 1979-03-01 | Kazuo Fushimi | Semiconductor detector |
US4167748A (en) * | 1978-07-03 | 1979-09-11 | Bell Telephone Laboratories, Incorporated | High voltage monolithic transistor circuit |
JPS5594068U (es) * | 1978-12-21 | 1980-06-30 | ||
US4231820A (en) * | 1979-02-21 | 1980-11-04 | Rca Corporation | Method of making a silicon diode array target |
DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
US4292645A (en) * | 1979-10-18 | 1981-09-29 | Picker Corporation | Charge splitting resistive layer for a semiconductor gamma camera |
US4329702A (en) * | 1980-04-23 | 1982-05-11 | Rca Corporation | Low cost reduced blooming device and method for making the same |
US4376285A (en) * | 1980-06-23 | 1983-03-08 | Massachusetts Institute Of Technology | High speed optoelectronic switch |
US4369458A (en) * | 1980-07-01 | 1983-01-18 | Westinghouse Electric Corp. | Self-aligned, flip-chip focal plane array configuration |
-
1980
- 1980-07-07 NL NL8003906A patent/NL8003906A/nl not_active Application Discontinuation
-
1981
- 1981-06-20 DE DE19813124238 patent/DE3124238A1/de active Granted
- 1981-07-02 CA CA000380968A patent/CA1189175A/en not_active Expired
- 1981-07-03 GB GB8120653A patent/GB2080026B/en not_active Expired
- 1981-07-03 ES ES503658A patent/ES503658A0/es active Granted
- 1981-07-03 IT IT22750/81A patent/IT1137597B/it active
- 1981-07-03 AU AU72556/81A patent/AU546782B2/en not_active Ceased
- 1981-07-06 FR FR8113236A patent/FR2486309B1/fr not_active Expired
- 1981-07-07 AT AT0301081A patent/AT387106B/de not_active IP Right Cessation
- 1981-07-07 JP JP56105175A patent/JPS5748275A/ja active Granted
-
1988
- 1988-02-02 US US07/153,523 patent/US4791468A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3124238A1 (de) | 1982-06-16 |
AT387106B (de) | 1988-12-12 |
JPS5748275A (en) | 1982-03-19 |
GB2080026A (en) | 1982-01-27 |
FR2486309A1 (fr) | 1982-01-08 |
DE3124238C2 (es) | 1991-01-31 |
IT8122750A0 (it) | 1981-07-03 |
GB2080026B (en) | 1984-05-02 |
US4791468A (en) | 1988-12-13 |
AU546782B2 (en) | 1985-09-19 |
CA1189175A (en) | 1985-06-18 |
AU7255681A (en) | 1982-01-14 |
ATA301081A (de) | 1988-04-15 |
JPS622710B2 (es) | 1987-01-21 |
NL8003906A (nl) | 1982-02-01 |
IT1137597B (it) | 1986-09-10 |
ES503658A0 (es) | 1982-12-16 |
FR2486309B1 (fr) | 1986-01-03 |
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