ES503658A0 - Un dispositivo semiconductor sensible a radiacion - Google Patents

Un dispositivo semiconductor sensible a radiacion

Info

Publication number
ES503658A0
ES503658A0 ES503658A ES503658A ES503658A0 ES 503658 A0 ES503658 A0 ES 503658A0 ES 503658 A ES503658 A ES 503658A ES 503658 A ES503658 A ES 503658A ES 503658 A0 ES503658 A0 ES 503658A0
Authority
ES
Spain
Prior art keywords
semiconductor device
radiation sensitive
sensitive semiconductor
radiation
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES503658A
Other languages
English (en)
Other versions
ES8302364A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES503658A0 publication Critical patent/ES503658A0/es
Publication of ES8302364A1 publication Critical patent/ES8302364A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
ES503658A 1980-07-07 1981-07-03 Un dispositivo semiconductor sensible a radiacion Expired ES8302364A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8003906A NL8003906A (nl) 1980-07-07 1980-07-07 Stralingsgevoelige halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
ES503658A0 true ES503658A0 (es) 1982-12-16
ES8302364A1 ES8302364A1 (es) 1982-12-16

Family

ID=19835577

Family Applications (1)

Application Number Title Priority Date Filing Date
ES503658A Expired ES8302364A1 (es) 1980-07-07 1981-07-03 Un dispositivo semiconductor sensible a radiacion

Country Status (11)

Country Link
US (1) US4791468A (es)
JP (1) JPS5748275A (es)
AT (1) AT387106B (es)
AU (1) AU546782B2 (es)
CA (1) CA1189175A (es)
DE (1) DE3124238A1 (es)
ES (1) ES8302364A1 (es)
FR (1) FR2486309B1 (es)
GB (1) GB2080026B (es)
IT (1) IT1137597B (es)
NL (1) NL8003906A (es)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128019B (en) * 1982-09-23 1986-10-08 Secr Defence Infrared radiation detection device
CA1241418A (en) * 1983-07-06 1988-08-30 Johannes M. Sevenhans Radiation-sensitive semiconductor device
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
US4680471A (en) * 1985-03-20 1987-07-14 Motorola, Inc. Integrated circuit packaging
NL8501489A (nl) * 1985-05-24 1986-12-16 Philips Nv Positie-gevoelige stralingsdetector.
NL8501501A (nl) * 1985-05-24 1986-12-16 Tno Foto-elektrische omzetter.
NL8601719A (nl) * 1986-07-02 1988-02-01 Philips Nv Electronisch instelbare positiegevoelige stralingsdetector, focusfoutdetectiestelsel voorzien van een dergelijke stralingsdetector, en optische lees- en/of schrijfinrichting voorzien van een dergelijk focusfoutdetectiestelsel.
DE3728691A1 (de) * 1986-08-28 1988-03-10 Nissan Motor Lichtempfindlicher positionssensor
JP2757985B2 (ja) * 1986-10-01 1998-05-25 ソニー株式会社 受光装置とその製造方法
NL8700370A (nl) * 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
JP2712208B2 (ja) * 1987-12-07 1998-02-10 松下電器産業株式会社 受光素子
JPH01248676A (ja) * 1988-03-30 1989-10-04 Matsushita Electron Corp 光半導体装置
NL8901629A (nl) * 1989-06-28 1991-01-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting.
DE3929845A1 (de) * 1989-09-08 1991-03-21 Messerschmitt Boelkow Blohm Einrichtung zur wellenlaengenbestimmung optischer strahlung
AT393009B (de) * 1989-11-07 1991-07-25 Poska Albertas Ionas Antanovic Selbsttaetiges ventil
DE4326754A1 (de) * 1993-08-11 1995-02-16 Daimler Benz Ag Halbleiter-Photodetektor
DE4413481C2 (de) * 1994-04-19 1999-12-16 Vishay Semiconductor Gmbh Optoelektronisches Bauelement
TWI257181B (en) * 2003-07-28 2006-06-21 Rohm Co Ltd Semiconductor module
US7388187B1 (en) * 2007-03-06 2008-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Cross-talk reduction through deep pixel well implant for image sensors
CN102723349B (zh) * 2012-06-26 2015-01-21 中国科学院上海高等研究院 带有隔离层的cmos图像传感器及其制作方法
RU204784U1 (ru) * 2020-12-23 2021-06-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В.Ломоносова" (МГУ) Универсальный полупроводниковый спектрометр для детектирования корпускулярных космических излучений

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486029A (en) * 1965-12-29 1969-12-23 Gen Electric Radiative interconnection arrangement
US3593067A (en) * 1967-08-07 1971-07-13 Honeywell Inc Semiconductor radiation sensor
NL6714455A (es) * 1967-10-25 1969-04-29
US3548233A (en) * 1968-11-29 1970-12-15 Rca Corp Charge storage device with pn junction diode array target having semiconductor contact pads
CA879979A (en) * 1969-09-26 1971-08-31 J. Mcintyre Robert Quadrant photodiode
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice
US3916429A (en) * 1971-12-20 1975-10-28 Philips Corp Gated silicon diode array camera tube
JPS5213918B2 (es) * 1972-02-02 1977-04-18
JPS5641186B2 (es) * 1972-03-03 1981-09-26
US3949223A (en) * 1973-11-01 1976-04-06 Honeywell Inc. Monolithic photoconductive detector array
US4025943A (en) * 1976-03-22 1977-05-24 Canadian Patents And Development Limited Photogeneration channel in front illuminated solid state silicon imaging devices
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
JPS5427384A (en) * 1977-08-02 1979-03-01 Kazuo Fushimi Semiconductor detector
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit
JPS5594068U (es) * 1978-12-21 1980-06-30
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4292645A (en) * 1979-10-18 1981-09-29 Picker Corporation Charge splitting resistive layer for a semiconductor gamma camera
US4329702A (en) * 1980-04-23 1982-05-11 Rca Corporation Low cost reduced blooming device and method for making the same
US4376285A (en) * 1980-06-23 1983-03-08 Massachusetts Institute Of Technology High speed optoelectronic switch
US4369458A (en) * 1980-07-01 1983-01-18 Westinghouse Electric Corp. Self-aligned, flip-chip focal plane array configuration

Also Published As

Publication number Publication date
CA1189175A (en) 1985-06-18
JPS5748275A (en) 1982-03-19
ATA301081A (de) 1988-04-15
JPS622710B2 (es) 1987-01-21
AU7255681A (en) 1982-01-14
NL8003906A (nl) 1982-02-01
IT1137597B (it) 1986-09-10
GB2080026B (en) 1984-05-02
DE3124238A1 (de) 1982-06-16
US4791468A (en) 1988-12-13
IT8122750A0 (it) 1981-07-03
DE3124238C2 (es) 1991-01-31
GB2080026A (en) 1982-01-27
FR2486309B1 (fr) 1986-01-03
ES8302364A1 (es) 1982-12-16
AT387106B (de) 1988-12-12
FR2486309A1 (fr) 1982-01-08
AU546782B2 (en) 1985-09-19

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