BE873009A - Dispositif a semi-conducteurs - Google Patents
Dispositif a semi-conducteursInfo
- Publication number
- BE873009A BE873009A BE192506A BE192506A BE873009A BE 873009 A BE873009 A BE 873009A BE 192506 A BE192506 A BE 192506A BE 192506 A BE192506 A BE 192506A BE 873009 A BE873009 A BE 873009A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/865,236 US4236164A (en) | 1977-12-28 | 1977-12-28 | Bipolar transistor stabilization structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE873009A true BE873009A (fr) | 1979-04-17 |
Family
ID=25345018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE192506A BE873009A (fr) | 1977-12-28 | 1978-12-22 | Dispositif a semi-conducteurs |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4236164A (fr) |
| JP (1) | JPS5497378A (fr) |
| BE (1) | BE873009A (fr) |
| CA (1) | CA1118533A (fr) |
| DE (1) | DE2855840A1 (fr) |
| FR (1) | FR2413790A1 (fr) |
| GB (1) | GB2011708B (fr) |
| IT (1) | IT1108268B (fr) |
| NL (1) | NL7812522A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162365A (en) * | 1981-03-30 | 1982-10-06 | Toshiba Corp | Semiconductor device |
| JPS59181679A (ja) * | 1983-03-31 | 1984-10-16 | Nippon Denso Co Ltd | 半導体装置 |
| JPH0719838B2 (ja) * | 1985-07-19 | 1995-03-06 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3631311A (en) * | 1968-03-26 | 1971-12-28 | Telefunken Patent | Semiconductor circuit arrangement with integrated base leakage resistance |
| US3766449A (en) * | 1972-03-27 | 1973-10-16 | Ferranti Ltd | Transistors |
| JPS509515A (fr) * | 1973-05-30 | 1975-01-31 | ||
| JPS5116310B2 (fr) * | 1973-12-12 | 1976-05-22 | ||
| DE2410092A1 (de) * | 1974-03-02 | 1975-09-04 | Licentia Gmbh | Halbleiteranordnung |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
| US4047220A (en) * | 1975-12-24 | 1977-09-06 | General Electric Company | Bipolar transistor structure having low saturation resistance |
| US4143455A (en) * | 1976-03-11 | 1979-03-13 | Siemens Aktiengesellschaft | Method of producing a semiconductor component |
-
1977
- 1977-12-28 US US05/865,236 patent/US4236164A/en not_active Expired - Lifetime
-
1978
- 1978-12-04 GB GB7847099A patent/GB2011708B/en not_active Expired
- 1978-12-21 CA CA000318420A patent/CA1118533A/fr not_active Expired
- 1978-12-22 BE BE192506A patent/BE873009A/fr not_active IP Right Cessation
- 1978-12-22 FR FR7836215A patent/FR2413790A1/fr active Granted
- 1978-12-22 NL NL7812522A patent/NL7812522A/xx not_active Application Discontinuation
- 1978-12-22 DE DE19782855840 patent/DE2855840A1/de not_active Withdrawn
- 1978-12-27 IT IT69957/78A patent/IT1108268B/it active
- 1978-12-28 JP JP16130978A patent/JPS5497378A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2011708B (en) | 1982-02-24 |
| IT1108268B (it) | 1985-12-02 |
| FR2413790A1 (fr) | 1979-07-27 |
| DE2855840A1 (de) | 1979-08-16 |
| NL7812522A (nl) | 1979-07-02 |
| CA1118533A (fr) | 1982-02-16 |
| GB2011708A (en) | 1979-07-11 |
| US4236164A (en) | 1980-11-25 |
| JPS6145863B2 (fr) | 1986-10-09 |
| IT7869957A0 (it) | 1978-12-27 |
| FR2413790B1 (fr) | 1984-06-29 |
| JPS5497378A (en) | 1979-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: WESTERN ELECTRIC CY INC. Effective date: 19891231 |