JPS5748275A - Radiation sensitive semiconductor device - Google Patents

Radiation sensitive semiconductor device

Info

Publication number
JPS5748275A
JPS5748275A JP56105175A JP10517581A JPS5748275A JP S5748275 A JPS5748275 A JP S5748275A JP 56105175 A JP56105175 A JP 56105175A JP 10517581 A JP10517581 A JP 10517581A JP S5748275 A JPS5748275 A JP S5748275A
Authority
JP
Japan
Prior art keywords
semiconductor device
radiation sensitive
sensitive semiconductor
radiation
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56105175A
Other languages
English (en)
Other versions
JPS622710B2 (ja
Inventor
Marie Oijiene Fuiberehi Arutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5748275A publication Critical patent/JPS5748275A/ja
Publication of JPS622710B2 publication Critical patent/JPS622710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
JP56105175A 1980-07-07 1981-07-07 Radiation sensitive semiconductor device Granted JPS5748275A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8003906A NL8003906A (nl) 1980-07-07 1980-07-07 Stralingsgevoelige halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS5748275A true JPS5748275A (en) 1982-03-19
JPS622710B2 JPS622710B2 (ja) 1987-01-21

Family

ID=19835577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105175A Granted JPS5748275A (en) 1980-07-07 1981-07-07 Radiation sensitive semiconductor device

Country Status (11)

Country Link
US (1) US4791468A (ja)
JP (1) JPS5748275A (ja)
AT (1) AT387106B (ja)
AU (1) AU546782B2 (ja)
CA (1) CA1189175A (ja)
DE (1) DE3124238A1 (ja)
ES (1) ES8302364A1 (ja)
FR (1) FR2486309B1 (ja)
GB (1) GB2080026B (ja)
IT (1) IT1137597B (ja)
NL (1) NL8003906A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154579A (ja) * 1983-12-20 1985-08-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 半導体装置
JPS6388870A (ja) * 1986-10-01 1988-04-19 Sony Corp 受光装置
JPH01150371A (ja) * 1987-12-07 1989-06-13 Matsushita Electric Ind Co Ltd 受光素子
JPH01248676A (ja) * 1988-03-30 1989-10-04 Matsushita Electron Corp 光半導体装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128019B (en) * 1982-09-23 1986-10-08 Secr Defence Infrared radiation detection device
CA1241418A (en) * 1983-07-06 1988-08-30 Johannes M. Sevenhans Radiation-sensitive semiconductor device
US4680471A (en) * 1985-03-20 1987-07-14 Motorola, Inc. Integrated circuit packaging
NL8501489A (nl) * 1985-05-24 1986-12-16 Philips Nv Positie-gevoelige stralingsdetector.
NL8501501A (nl) * 1985-05-24 1986-12-16 Tno Foto-elektrische omzetter.
NL8601719A (nl) * 1986-07-02 1988-02-01 Philips Nv Electronisch instelbare positiegevoelige stralingsdetector, focusfoutdetectiestelsel voorzien van een dergelijke stralingsdetector, en optische lees- en/of schrijfinrichting voorzien van een dergelijk focusfoutdetectiestelsel.
DE3728691A1 (de) * 1986-08-28 1988-03-10 Nissan Motor Lichtempfindlicher positionssensor
NL8700370A (nl) * 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
NL8901629A (nl) * 1989-06-28 1991-01-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting.
DE3929845A1 (de) * 1989-09-08 1991-03-21 Messerschmitt Boelkow Blohm Einrichtung zur wellenlaengenbestimmung optischer strahlung
AT393009B (de) * 1989-11-07 1991-07-25 Poska Albertas Ionas Antanovic Selbsttaetiges ventil
DE4326754A1 (de) * 1993-08-11 1995-02-16 Daimler Benz Ag Halbleiter-Photodetektor
DE4413481C2 (de) * 1994-04-19 1999-12-16 Vishay Semiconductor Gmbh Optoelektronisches Bauelement
TWI257181B (en) * 2003-07-28 2006-06-21 Rohm Co Ltd Semiconductor module
US7388187B1 (en) * 2007-03-06 2008-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Cross-talk reduction through deep pixel well implant for image sensors
CN102723349B (zh) * 2012-06-26 2015-01-21 中国科学院上海高等研究院 带有隔离层的cmos图像传感器及其制作方法
RU204784U1 (ru) * 2020-12-23 2021-06-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В.Ломоносова" (МГУ) Универсальный полупроводниковый спектрометр для детектирования корпускулярных космических излучений

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593067A (en) * 1967-08-07 1971-07-13 Honeywell Inc Semiconductor radiation sensor
JPS5427384A (en) * 1977-08-02 1979-03-01 Kazuo Fushimi Semiconductor detector
JPS5594068U (ja) * 1978-12-21 1980-06-30

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486029A (en) * 1965-12-29 1969-12-23 Gen Electric Radiative interconnection arrangement
NL6714455A (ja) * 1967-10-25 1969-04-29
US3548233A (en) * 1968-11-29 1970-12-15 Rca Corp Charge storage device with pn junction diode array target having semiconductor contact pads
CA879979A (en) * 1969-09-26 1971-08-31 J. Mcintyre Robert Quadrant photodiode
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice
US3916429A (en) * 1971-12-20 1975-10-28 Philips Corp Gated silicon diode array camera tube
JPS5213918B2 (ja) * 1972-02-02 1977-04-18
JPS5641186B2 (ja) * 1972-03-03 1981-09-26
US3949223A (en) * 1973-11-01 1976-04-06 Honeywell Inc. Monolithic photoconductive detector array
US4025943A (en) * 1976-03-22 1977-05-24 Canadian Patents And Development Limited Photogeneration channel in front illuminated solid state silicon imaging devices
US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4292645A (en) * 1979-10-18 1981-09-29 Picker Corporation Charge splitting resistive layer for a semiconductor gamma camera
US4329702A (en) * 1980-04-23 1982-05-11 Rca Corporation Low cost reduced blooming device and method for making the same
US4376285A (en) * 1980-06-23 1983-03-08 Massachusetts Institute Of Technology High speed optoelectronic switch
US4369458A (en) * 1980-07-01 1983-01-18 Westinghouse Electric Corp. Self-aligned, flip-chip focal plane array configuration

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593067A (en) * 1967-08-07 1971-07-13 Honeywell Inc Semiconductor radiation sensor
JPS5427384A (en) * 1977-08-02 1979-03-01 Kazuo Fushimi Semiconductor detector
JPS5594068U (ja) * 1978-12-21 1980-06-30

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154579A (ja) * 1983-12-20 1985-08-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン 半導体装置
JPS6388870A (ja) * 1986-10-01 1988-04-19 Sony Corp 受光装置
JPH01150371A (ja) * 1987-12-07 1989-06-13 Matsushita Electric Ind Co Ltd 受光素子
JPH01248676A (ja) * 1988-03-30 1989-10-04 Matsushita Electron Corp 光半導体装置

Also Published As

Publication number Publication date
CA1189175A (en) 1985-06-18
ATA301081A (de) 1988-04-15
JPS622710B2 (ja) 1987-01-21
AU7255681A (en) 1982-01-14
NL8003906A (nl) 1982-02-01
IT1137597B (it) 1986-09-10
GB2080026B (en) 1984-05-02
DE3124238A1 (de) 1982-06-16
US4791468A (en) 1988-12-13
IT8122750A0 (it) 1981-07-03
DE3124238C2 (ja) 1991-01-31
GB2080026A (en) 1982-01-27
FR2486309B1 (fr) 1986-01-03
ES503658A0 (es) 1982-12-16
ES8302364A1 (es) 1982-12-16
AT387106B (de) 1988-12-12
FR2486309A1 (fr) 1982-01-08
AU546782B2 (en) 1985-09-19

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