JPS57113271A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57113271A
JPS57113271A JP55188148A JP18814880A JPS57113271A JP S57113271 A JPS57113271 A JP S57113271A JP 55188148 A JP55188148 A JP 55188148A JP 18814880 A JP18814880 A JP 18814880A JP S57113271 A JPS57113271 A JP S57113271A
Authority
JP
Japan
Prior art keywords
drain
polycrystal silicon
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55188148A
Other languages
Japanese (ja)
Inventor
Kazuo Yudasaka
Zenzo Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55188148A priority Critical patent/JPS57113271A/en
Publication of JPS57113271A publication Critical patent/JPS57113271A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To improve the degree of integration by using polycrystal silicon having a PN junction, which employs polycrystal silicon at the high potential side as a P type and polycrystal silicon at the low potential side as an N type, as wiring. CONSTITUTION:PN Junction diodes D1, D2 formed by the polycrystal silicon are mounted between a drain M' of a P channel MOSFET and a connecting section N' with a source of an N channel MOSFET or the drain M' which must function as the input of an anti-inverter circuit forming an FF circuit. The diodes D1, D2 are biased at all times in the forward direction because the potential of the drain M' does not lower more than the potential of the connecting section N' in the drain M' and the connecting section N'.
JP55188148A 1980-12-29 1980-12-29 Semiconductor integrated circuit device Pending JPS57113271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55188148A JPS57113271A (en) 1980-12-29 1980-12-29 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188148A JPS57113271A (en) 1980-12-29 1980-12-29 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57113271A true JPS57113271A (en) 1982-07-14

Family

ID=16218582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188148A Pending JPS57113271A (en) 1980-12-29 1980-12-29 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57113271A (en)

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