ES8103477A1 - Procedimiento de fabricacion de articulos especialmente uti-les en la fabricacion de circuitos integrados de gran escala - Google Patents

Procedimiento de fabricacion de articulos especialmente uti-les en la fabricacion de circuitos integrados de gran escala

Info

Publication number
ES8103477A1
ES8103477A1 ES491874A ES491874A ES8103477A1 ES 8103477 A1 ES8103477 A1 ES 8103477A1 ES 491874 A ES491874 A ES 491874A ES 491874 A ES491874 A ES 491874A ES 8103477 A1 ES8103477 A1 ES 8103477A1
Authority
ES
Spain
Prior art keywords
sensitivity
integrated circuits
manufacturing
scale integrated
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES491874A
Other languages
English (en)
Spanish (es)
Other versions
ES491874A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES491874A0 publication Critical patent/ES491874A0/es
Publication of ES8103477A1 publication Critical patent/ES8103477A1/es
Expired legal-status Critical Current

Links

Classifications

    • H10P76/2049—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2065—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam using corpuscular radiation other than electron beams

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
ES491874A 1979-05-31 1980-05-27 Procedimiento de fabricacion de articulos especialmente uti-les en la fabricacion de circuitos integrados de gran escala Expired ES8103477A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4407379A 1979-05-31 1979-05-31

Publications (2)

Publication Number Publication Date
ES491874A0 ES491874A0 (es) 1981-02-16
ES8103477A1 true ES8103477A1 (es) 1981-02-16

Family

ID=21930389

Family Applications (1)

Application Number Title Priority Date Filing Date
ES491874A Expired ES8103477A1 (es) 1979-05-31 1980-05-27 Procedimiento de fabricacion de articulos especialmente uti-les en la fabricacion de circuitos integrados de gran escala

Country Status (7)

Country Link
EP (1) EP0029061B1 (OSRAM)
JP (1) JPH0536782B2 (OSRAM)
CA (1) CA1145483A (OSRAM)
DE (1) DE3069341D1 (OSRAM)
ES (1) ES8103477A1 (OSRAM)
IT (1) IT1130689B (OSRAM)
WO (1) WO1980002752A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5362606A (en) * 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
JPH04130619A (ja) * 1990-09-20 1992-05-01 Mitsubishi Electric Corp 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3143423A (en) * 1962-04-02 1964-08-04 Eastman Kodak Co New photo-resist benzoylazide compositions
US3529960A (en) * 1967-01-24 1970-09-22 Hilbert Sloan Methods of treating resist coatings
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
JPS576578B2 (OSRAM) * 1973-11-05 1982-02-05
US4061799A (en) * 1973-11-05 1977-12-06 Texas Instruments Incorporated Method of patterning styrene diene block copolymer electron beam resists
JPS5738897B2 (OSRAM) * 1974-11-19 1982-08-18
DE3015866A1 (de) * 1979-04-24 1980-11-06 Westinghouse Electric Corp Verfahren zum lithographischen herstellen von lochmasken

Also Published As

Publication number Publication date
WO1980002752A1 (en) 1980-12-11
ES491874A0 (es) 1981-02-16
JPS56500627A (OSRAM) 1981-05-07
JPH0536782B2 (OSRAM) 1993-05-31
CA1145483A (en) 1983-04-26
EP0029061A1 (en) 1981-05-27
EP0029061A4 (en) 1982-07-13
DE3069341D1 (en) 1984-11-08
IT1130689B (it) 1986-06-18
IT8022403A0 (it) 1980-05-29
EP0029061B1 (en) 1984-10-03

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ES8103477A1 (es) Procedimiento de fabricacion de articulos especialmente uti-les en la fabricacion de circuitos integrados de gran escala
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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20010217