JPS54114177A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54114177A
JPS54114177A JP2092578A JP2092578A JPS54114177A JP S54114177 A JPS54114177 A JP S54114177A JP 2092578 A JP2092578 A JP 2092578A JP 2092578 A JP2092578 A JP 2092578A JP S54114177 A JPS54114177 A JP S54114177A
Authority
JP
Japan
Prior art keywords
electron beam
window
semiconductor device
jig
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2092578A
Other languages
Japanese (ja)
Inventor
Toshikatsu Shirasawa
Sumio Kawakami
Nobutake Konishi
Mitsuru Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2092578A priority Critical patent/JPS54114177A/en
Publication of JPS54114177A publication Critical patent/JPS54114177A/en
Pending legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To secure the draw-out of the electron beam only at the desired part through attachmnet of the jig at the irradiation window of the electron beam accelerator and thus to omit the adhesion mask of the irradiated substance.
CONSTITUTION: The electron is accelerated (1) and then drawn outside via scanner 2 and through window 3. Jig 4 is attached to window 3, and the semiconductor device on support plate 7 is irradiated selectively only by the electron beam passed through gap 5. As a result, the adhesion mask can be omitted.
COPYRIGHT: (C)1979,JPO&Japio
JP2092578A 1978-02-27 1978-02-27 Manufacture of semiconductor device Pending JPS54114177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2092578A JPS54114177A (en) 1978-02-27 1978-02-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2092578A JPS54114177A (en) 1978-02-27 1978-02-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54114177A true JPS54114177A (en) 1979-09-06

Family

ID=12040787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2092578A Pending JPS54114177A (en) 1978-02-27 1978-02-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54114177A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018006364A (en) * 2016-06-27 2018-01-11 三菱電機株式会社 Electron beam irradiation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018006364A (en) * 2016-06-27 2018-01-11 三菱電機株式会社 Electron beam irradiation device

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