JPS55148427A - Manufacturing of pattern - Google Patents

Manufacturing of pattern

Info

Publication number
JPS55148427A
JPS55148427A JP5681779A JP5681779A JPS55148427A JP S55148427 A JPS55148427 A JP S55148427A JP 5681779 A JP5681779 A JP 5681779A JP 5681779 A JP5681779 A JP 5681779A JP S55148427 A JPS55148427 A JP S55148427A
Authority
JP
Japan
Prior art keywords
developing
area
pattern
resist
electrodeposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5681779A
Other languages
Japanese (ja)
Inventor
Masaki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5681779A priority Critical patent/JPS55148427A/en
Publication of JPS55148427A publication Critical patent/JPS55148427A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To make a pattern of a high productivity and a high accuracy of interpattern positioning by developing the unevenly exposed areas with varied developing times and varied developing solutions as well. CONSTITUTION:A titanium 42 is sputtered on a silicon substrate 41 to be used for an X-ray mask and a positive-type resist 44 is coated thereon. Then it is exposed to an electron beam as follows: a 5X10<-6>C/cm<2> exposure to the A area and a 6X10<-7>C/cm<2> exposure to the B area. They are developed with isopropyl alcohol and an opening 45 is provided on the A area. After gold 46 is electrodeposited on it, an opening 47 is formed on the B area by developing with a mixed solution of isopropyl alcohol and methyl isobutyl ketone at the ratio of 150 to 1, and gold 48 is electrodeposited thereon. The resist 44 is exfoliated and a back etching is given to the substrate 41 allowing X-rays to pass through. Thus, by utilizing also the difference in sensitivity of the resist resulting from different ingredients of the developing solutions, the accuracy of the pattern can be increased.
JP5681779A 1979-05-09 1979-05-09 Manufacturing of pattern Pending JPS55148427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5681779A JPS55148427A (en) 1979-05-09 1979-05-09 Manufacturing of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5681779A JPS55148427A (en) 1979-05-09 1979-05-09 Manufacturing of pattern

Publications (1)

Publication Number Publication Date
JPS55148427A true JPS55148427A (en) 1980-11-19

Family

ID=13037920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5681779A Pending JPS55148427A (en) 1979-05-09 1979-05-09 Manufacturing of pattern

Country Status (1)

Country Link
JP (1) JPS55148427A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6112028A (en) * 1984-06-27 1986-01-20 Toshiba Corp Forming method of resist pattern
JPH0626246U (en) * 1982-09-01 1994-04-08 エヌ・ベー・フィリップス・フルーイランペンファブリケン Mask for forming a pattern on the lacquer layer by X-ray lithography

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312793A (en) * 1976-07-23 1978-02-04 Midori Anzen Kogyo Oxygen generating apparatus
JPS53123929A (en) * 1977-04-05 1978-10-28 Tokyo Ouka Kougiyou Kk Developing liquid for use in radiant ray positive type resist

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312793A (en) * 1976-07-23 1978-02-04 Midori Anzen Kogyo Oxygen generating apparatus
JPS53123929A (en) * 1977-04-05 1978-10-28 Tokyo Ouka Kougiyou Kk Developing liquid for use in radiant ray positive type resist

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0626246U (en) * 1982-09-01 1994-04-08 エヌ・ベー・フィリップス・フルーイランペンファブリケン Mask for forming a pattern on the lacquer layer by X-ray lithography
JPS6112028A (en) * 1984-06-27 1986-01-20 Toshiba Corp Forming method of resist pattern

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