JPS5642234A - Photomask preparation - Google Patents

Photomask preparation

Info

Publication number
JPS5642234A
JPS5642234A JP11736079A JP11736079A JPS5642234A JP S5642234 A JPS5642234 A JP S5642234A JP 11736079 A JP11736079 A JP 11736079A JP 11736079 A JP11736079 A JP 11736079A JP S5642234 A JPS5642234 A JP S5642234A
Authority
JP
Japan
Prior art keywords
parts
peripheral
central
line width
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11736079A
Other languages
Japanese (ja)
Other versions
JPS623941B2 (en
Inventor
Kuniomi Tsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP11736079A priority Critical patent/JPS5642234A/en
Publication of JPS5642234A publication Critical patent/JPS5642234A/en
Publication of JPS623941B2 publication Critical patent/JPS623941B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To compensate size change due to film thickness difference and etching speed difference between the central and peripheral parts in a photoetching process, by changing exposure in preparing a master mask in advance to correct the line width. CONSTITUTION:Imaging parts 2 on photosensitive substrate 1 are exposed imagewise by moving the miniaturized image of a reticle mask in a given pitch with a photorepeater. At that time imaging parts 2 are divided into given areas, such as central part I, intermediate part II, and peripheral part III, and each area is exposed by changing its exposure quantity so as to form a line width obtained by correcting in advance size change due to etching speed difference and film thickness difference between the peripheral and central parts of a photosensitive film in a process for photoetching a semiconductor wafer.
JP11736079A 1979-09-14 1979-09-14 Photomask preparation Granted JPS5642234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11736079A JPS5642234A (en) 1979-09-14 1979-09-14 Photomask preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11736079A JPS5642234A (en) 1979-09-14 1979-09-14 Photomask preparation

Publications (2)

Publication Number Publication Date
JPS5642234A true JPS5642234A (en) 1981-04-20
JPS623941B2 JPS623941B2 (en) 1987-01-28

Family

ID=14709745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11736079A Granted JPS5642234A (en) 1979-09-14 1979-09-14 Photomask preparation

Country Status (1)

Country Link
JP (1) JPS5642234A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282429A (en) * 2002-01-28 2003-10-03 Samsung Electronics Co Ltd Patterning method for manufacturing semiconductor device
JP2006210840A (en) * 2005-01-31 2006-08-10 Toshiba Corp Pattern forming method, manufacturing method of photomask, manufacturing method of semiconductor device and program
US7346882B2 (en) 2001-07-30 2008-03-18 Kabushiki Kaisha Toshiba Pattern forming method, mask manufacturing method, and LSI manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7346882B2 (en) 2001-07-30 2008-03-18 Kabushiki Kaisha Toshiba Pattern forming method, mask manufacturing method, and LSI manufacturing method
JP2003282429A (en) * 2002-01-28 2003-10-03 Samsung Electronics Co Ltd Patterning method for manufacturing semiconductor device
JP2006210840A (en) * 2005-01-31 2006-08-10 Toshiba Corp Pattern forming method, manufacturing method of photomask, manufacturing method of semiconductor device and program

Also Published As

Publication number Publication date
JPS623941B2 (en) 1987-01-28

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