ES373627A1 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES373627A1 ES373627A1 ES373627A ES373627A ES373627A1 ES 373627 A1 ES373627 A1 ES 373627A1 ES 373627 A ES373627 A ES 373627A ES 373627 A ES373627 A ES 373627A ES 373627 A1 ES373627 A1 ES 373627A1
- Authority
- ES
- Spain
- Prior art keywords
- resistor
- wafer
- impurities
- contact
- contact regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 10
- 230000007935 neutral effect Effects 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB54878/68A GB1249317A (en) | 1968-11-19 | 1968-11-19 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES373627A1 true ES373627A1 (es) | 1972-05-16 |
Family
ID=10472333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES373627A Expired ES373627A1 (es) | 1968-11-19 | 1969-11-17 | Un dispositivo semiconductor. |
Country Status (12)
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3796929A (en) * | 1970-12-09 | 1974-03-12 | Philips Nv | Junction isolated integrated circuit resistor with crystal damage near isolation junction |
FR2123179B1 (enrdf_load_stackoverflow) * | 1971-01-28 | 1974-02-15 | Commissariat Energie Atomique | |
FR2189876A1 (en) * | 1972-06-23 | 1974-01-25 | Anvar | Radiation resistant silicon wafers - and solar cells made therefrom for use in space |
JPS53148374U (enrdf_load_stackoverflow) * | 1977-04-27 | 1978-11-22 | ||
JPS53136980A (en) * | 1977-05-04 | 1978-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Resistance value correction method for poly crystal silicon resistor |
FR2396417A1 (fr) * | 1977-06-29 | 1979-01-26 | Tokyo Shibaura Electric Co | Composant semi-conducteur comprenant une resistance |
FR2396418A1 (fr) * | 1977-06-29 | 1979-01-26 | Tokyo Shibaura Electric Co | Dispositif a semi-conducteurs integre dont les caracteristiques ne sont pas alterees par l'encapsulage |
JPS5439584A (en) * | 1977-07-14 | 1979-03-27 | Toshiba Corp | Semiconductor device |
FR2430653A1 (fr) | 1978-07-04 | 1980-02-01 | Thomson Csf | Resistance au silicium a tres faible coefficient de temperature |
DE3301665A1 (de) * | 1983-01-20 | 1984-07-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zur herstellung eines duennfilmwiderstandes |
JPS6014898A (ja) * | 1983-07-05 | 1985-01-25 | 高田 継生 | 乾燥手段をそなえた衣類収納箱 |
-
1968
- 1968-11-19 GB GB54878/68A patent/GB1249317A/en not_active Expired
-
1969
- 1969-10-29 DE DE19691954445 patent/DE1954445A1/de active Pending
- 1969-11-14 NL NL6917221.A patent/NL166820C/xx not_active IP Right Cessation
- 1969-11-14 CH CH1700769A patent/CH500570A/de not_active IP Right Cessation
- 1969-11-15 JP JP44091158A patent/JPS4844064B1/ja active Pending
- 1969-11-17 BR BR214260/69A patent/BR6914260D0/pt unknown
- 1969-11-17 CA CA067595A patent/CA937682A/en not_active Expired
- 1969-11-17 ES ES373627A patent/ES373627A1/es not_active Expired
- 1969-11-17 AT AT1071369A patent/AT300961B/de not_active IP Right Cessation
- 1969-11-17 SE SE15735/69A patent/SE361771B/xx unknown
- 1969-11-18 FR FR6939590A patent/FR2023619A1/fr not_active Withdrawn
- 1969-11-18 BE BE741870D patent/BE741870A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AT300961B (de) | 1972-08-10 |
BR6914260D0 (pt) | 1973-04-19 |
SE361771B (enrdf_load_stackoverflow) | 1973-11-12 |
GB1249317A (en) | 1971-10-13 |
NL6917221A (enrdf_load_stackoverflow) | 1970-05-21 |
CH500570A (de) | 1970-12-15 |
NL166820C (nl) | 1981-09-15 |
BE741870A (enrdf_load_stackoverflow) | 1970-05-19 |
DE1954445A1 (de) | 1970-06-11 |
FR2023619A1 (enrdf_load_stackoverflow) | 1970-08-21 |
NL166820B (nl) | 1981-04-15 |
JPS4844064B1 (enrdf_load_stackoverflow) | 1973-12-22 |
CA937682A (en) | 1973-11-27 |
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