FR2430653A1 - Resistance au silicium a tres faible coefficient de temperature - Google Patents

Resistance au silicium a tres faible coefficient de temperature

Info

Publication number
FR2430653A1
FR2430653A1 FR7819932A FR7819932A FR2430653A1 FR 2430653 A1 FR2430653 A1 FR 2430653A1 FR 7819932 A FR7819932 A FR 7819932A FR 7819932 A FR7819932 A FR 7819932A FR 2430653 A1 FR2430653 A1 FR 2430653A1
Authority
FR
France
Prior art keywords
type
low temperature
temperature coefficient
degrees
donor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7819932A
Other languages
English (en)
Other versions
FR2430653B1 (fr
Inventor
Michel Calligaro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7819932A priority Critical patent/FR2430653A1/fr
Priority to US06/054,605 priority patent/US4329774A/en
Priority to GB7923044A priority patent/GB2025147B/en
Priority to DE2927003A priority patent/DE2927003C2/de
Publication of FR2430653A1 publication Critical patent/FR2430653A1/fr
Application granted granted Critical
Publication of FR2430653B1 publication Critical patent/FR2430653B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

L'invention se rapporte aux résistances ohmiques de type << en volume >> (bulk resistance en anglais) comportant un volume massif de matériau semi-conducteur. Normalement la résistivité de telles résistances varie considérablement avec la température de fonctionnement La résistance selon l'invention comporte un parallélépipéde rectangle en silicium dopé par au moins deux substances, l'une de type accepteur et l'autre de type donneur. La résistance est alors beaucoup plus stable dans la gamme de température - 50 degrés C à + 200 degrés C. Une deuxième substance de type donneur (par exemple, le césium, la première étant l'or) permet d'améliorer encore la stabilité. .Application aux charges ohmiques de puissance en régime pulse.
FR7819932A 1978-07-04 1978-07-04 Resistance au silicium a tres faible coefficient de temperature Granted FR2430653A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7819932A FR2430653A1 (fr) 1978-07-04 1978-07-04 Resistance au silicium a tres faible coefficient de temperature
US06/054,605 US4329774A (en) 1978-07-04 1979-07-03 Silicon resistor having a very low temperature coefficient
GB7923044A GB2025147B (en) 1978-07-04 1979-07-03 Silicon resistor having a very low temperature coefficient
DE2927003A DE2927003C2 (de) 1978-07-04 1979-07-04 Siliziumwiderstandselement aus einem plättchenförmigen Halbleiterkörper und Verfahren zu seiner Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7819932A FR2430653A1 (fr) 1978-07-04 1978-07-04 Resistance au silicium a tres faible coefficient de temperature

Publications (2)

Publication Number Publication Date
FR2430653A1 true FR2430653A1 (fr) 1980-02-01
FR2430653B1 FR2430653B1 (fr) 1981-11-27

Family

ID=9210314

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7819932A Granted FR2430653A1 (fr) 1978-07-04 1978-07-04 Resistance au silicium a tres faible coefficient de temperature

Country Status (4)

Country Link
US (1) US4329774A (fr)
DE (1) DE2927003C2 (fr)
FR (1) FR2430653A1 (fr)
GB (1) GB2025147B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240511A (en) * 1987-02-20 1993-08-31 National Semiconductor Corporation Lightly doped polycrystalline silicon resistor having a non-negative temperature coefficient
DE3736144A1 (de) * 1987-10-26 1989-05-03 Telefunken Electronic Gmbh Verfahren zur herstellung eines widerstandes zur verwendung als vorwiderstand fuer halbleiterlumineszenzdioden
US5538915A (en) * 1992-06-05 1996-07-23 The Regents Of The University Of California Process for forming synapses in neural networks and resistor therefor
US6211769B1 (en) 1997-12-22 2001-04-03 Texas Instruments Incorporated System to minimize the temperature coefficient of resistance of passive resistors in an integrated circuit process flow
DE10012866A1 (de) * 2000-03-16 2001-09-27 Siemens Ag Elektrischer Halbleiterwiderstand und Verfahren zu dessen Herstellung
JP4213329B2 (ja) * 2000-06-15 2009-01-21 三菱電機株式会社 限流装置
DE10053957C2 (de) * 2000-10-31 2002-10-31 Infineon Technologies Ag Temperaturkompensierter Halbleiterwiderstand und dessen Verwendung
FR2879841B1 (fr) * 2004-12-22 2008-10-24 Thales Sa Laser semiconducteur de puissance a faibles divergence et astigmatisme
RU2445721C1 (ru) * 2010-12-10 2012-03-20 Федеральное государственное унитарное предприятие "Всероссийский электротехнический институт им. В.И. Ленина" Способ изготовления мощного полупроводникового резистора
RU2531381C1 (ru) * 2013-10-18 2014-10-20 Федеральное государственное унитарное предприятие "Всероссийский электротехнический институт имени В.И. Ленина" Мощный полупроводниковый резистор и способ его изготовления

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337793A (en) * 1964-11-02 1967-08-22 James F Gibbons Voltage regulator utilizing gold doped silicon
FR1569674A (fr) * 1967-02-15 1969-06-06
US3683306A (en) * 1968-11-19 1972-08-08 Philips Corp Temperature compensated semiconductor resistor containing neutral inactive impurities

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
US3473976A (en) * 1966-03-31 1969-10-21 Ibm Carrier lifetime killer doping process for semiconductor structures and the product formed thereby
US3484658A (en) * 1966-08-25 1969-12-16 Nippon Telegraph & Telephone Temperature compensated semiconductor resistor
US3611062A (en) * 1968-04-17 1971-10-05 Ibm Passive elements for solid-state integrated circuits
US3711325A (en) * 1968-12-13 1973-01-16 Texas Instruments Inc Activation process for electroless nickel plating
US3963523A (en) * 1973-04-26 1976-06-15 Matsushita Electronics Corporation Method of manufacturing semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337793A (en) * 1964-11-02 1967-08-22 James F Gibbons Voltage regulator utilizing gold doped silicon
FR1569674A (fr) * 1967-02-15 1969-06-06
US3683306A (en) * 1968-11-19 1972-08-08 Philips Corp Temperature compensated semiconductor resistor containing neutral inactive impurities

Also Published As

Publication number Publication date
DE2927003C2 (de) 1983-11-10
FR2430653B1 (fr) 1981-11-27
GB2025147A (en) 1980-01-16
GB2025147B (en) 1982-09-22
DE2927003A1 (de) 1980-01-17
US4329774A (en) 1982-05-18

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